边峰

GaN材料带边峰位置为363.4nm，半高宽为9.5nm。

The band-edge peak and FWHM for GaN are 364.4 nm and 9.5 nm , respectively .

论文详细地讨论了Barker序列、准Barker序列和最小边峰相关序列。

Specifically , Barker sequences , quasi-Barker sequences and minimum peak sidelobe sequences are investigated in detail .

为减弱边峰对Galileo信号捕获的影响，在频域中实现了减弱边峰算法，实验结果表明能够提高检测概率。

To reduce the edge peak on the impact of the Galileo signal acquisition , some algorithms are realized in the frequency domain .

一种新的低/零自相关边峰训练序列设计方法

A Novel Design Method for Training Sequence with Low-Lobe Values

黄光峰强度随温度升高的衰减速度要比带边峰慢得多。

The attenuation degree of the edge peaks intensity after annealing reduces with the temperature increasing at a higher decay rate than that of the yellow peak .

它的边峰在任意情况下都被展宽，而且当光场起伏的压缩方向与光场振幅的相干激发方向不平行或不垂直时，辐射光谱均呈现不对称分布。

The positions of the side peaks and the character of symmetry of radiation spectrum depend upon the coherent excitation direction and the squeezing direction of the driving field .

在有机配位溶剂中制备了具有明显的激子吸收峰和较强的带边荧光峰的尺寸单分散纳米CdSe超微粒。

Monodispersion CdSe nanocrystalline with obvious exciton absorption peak and stronger band-edge photoluminescence were prepared in organic coordinating solvent .

当热处理温度小于550℃时，氧化锌薄膜在室温下均有较强的紫外带边发射峰，而可见波段的发射很弱；

All the thin films emitted strong band to band UV emission without defects related visible emissions at room temperature when the processing temperature was below 550 ℃ .

同时随着Mg含量的增加，样品的（111）峰位向大角度方向移动，吸收边和发光峰的蓝移也增加，蓝移说明了带隙的展宽。

As Mg concentration increases ,〈 111 〉 peak moves toward large angle , and blue shift of both the absorption edge and PL peak becomes increasingly pronounced , indicating the band-gap widening .

薄膜的吸收边和发光峰随着溅射时间的增加发生蓝移。

The absorption edge and luminescence peak of films blue shift with the sputtering time increases . 7 .

带边发射相对于吸收峰的Stokes移动随着颗粒尺寸减小而增大。

The stokes shift between absorption peak and UV emission increased as the particle size decreased .

在GaAs中碳受主局域振动模主吸收带低能侧，观察到一个吸收边带，其峰频率与局域振动模吸收主带的峰频率之差约为35cm－1。

A sideband on the low energy side of the local vibrational mode main absorption band of carbon acceptor in GaAs was observed .

室温PL测量该样品在380nm处有很强的近带边发射，半峰全宽为15nm。

The sample shows strong near-band edge emission at 380 nm in PL spectra at room temperature , FWHM of the peak is 15 nm , no deep level emission was observed .

对吸收边和OH-吸收峰移动的机理，以及Zn：Fe：LiNbO3晶体抗光致散射能力增强的机理进行了研究。

The mechanism of the shift of the absorption edge and OH ~ - absorption peak , the enhancement of the photo-damage resistance ability of Zn : Fe : LiNbO_3 was discussed .