缓冲层技术
- 网络buffer layer
缓冲层技术-
极低的暗电流的获得主要是由于外延结构中应用了高温A1N缓冲层技术。
The ultra-low dark current achieved is explained as a result of the HT AlN buffer layer applied in the epi-structure .
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采用应变缓冲层技术，得到质量良好的大应变InGaAs/InP体材料。
High quality highly strained InGaAs / InP materials were obtained by using strain buffer layer .
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特殊的缓冲层技术，可以有效地抑制生长在Si衬底上的GaN薄膜开裂。
The cracking of GaN thin films grown on Si substrate .
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CSD制备涂层导体缓冲层的技术进展
Progress of CSD-buffer Layers for Coated Conductors
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涂层超导体金属基材及缓冲层制备技术的研究
Study on the Technologies of Manufacturing Metallic Substrates and Buffer Layers for Coated-conductor