缓冲层

实验结构由耦合棱镜和依次制备在棱镜底面的四层薄膜组成，这四层薄膜分别是金属层（作为上电极）、极化聚合物、缓冲层和下电极。

The experimental structure consists of a coupling prism and 4-layer film that prepared on the prism bottom in proper order . These 4-layer films are metal layer ( used as upper electrode ), poled polymer , cushion layer and bottom electrode , respectively .

用C（60）为空穴缓冲层的高效率有机电致发光器件

C_ ( 60 ) as a Hole-injecting Buffer Layer for Improvement in Efficiency of Organic Electroluminescent Devices

Ti缓冲层对ZnO薄膜应力和光学性能的影响

Study on the Stress and Optical Properties of Ti-buffered ZnO Films

阳极氧化铝作缓冲层的Si基GaN生长

GaN Growth on Si Substrate Using Anodic Alumina as Buffer Layer

特殊的缓冲层技术，可以有效地抑制生长在Si衬底上的GaN薄膜开裂。

The cracking of GaN thin films grown on Si substrate .

溶胶&凝胶法制备GaN基LED缓冲层氧化锌薄膜的研究

Preparation of ZnO Buffer Layer on Sapphire by Sol-Gel Method for GaN-Based LED

蓝宝石上射频溅射沉积CeO2外延缓冲层

Growth of epitaxial ceo_2 thin films on sapphire by radio-frequency sputtering

Ti缓冲层及退火处理对Si（111）基片上生长的ZnO薄膜结构和发光特性的影响

Photoluminescence of as-grown and annealed ZnO films on Ti-buffered Si ( 111 ) substrates

氧化铝缓冲层对ZnO薄膜性质的影响

Influence of Aluminum Oxide Buffer Layer on the Properties of ZnO Thin Film

氧化物缓冲层制备Si（111）基GaN纳米线

Fabrication of GaN Nanowires on Si ( 111 ) Substrates Using Oxide Buffer Layers

用Gd2O3做介质缓冲层制作金属包覆光波导偏振器

Metal Cladding Optical Waveguide Polarizer Using Gd_2O_3 As a Buffer Layer

高分子辅助化学溶液沉积制备涂层导体CeO2缓冲层

Polymer-Assisted Chemical Solution Deposition for the Preparation of CeO_2 Buffer Layer for Coated Conductors

缓冲层、包覆层对提高ZnO纳米薄膜紫外发射性能的研究

Improvement of Ultraviolet Emission Performance of ZnO Nanocrystalline Thin Films by Buffer Layers and Capping Layers

研究了生长AlN缓冲层前在Si（111）衬底上铺Al的三种方式对GaN外延材料的影响。

Three kinds of process of Al-predeposition on Si ( 111 ) substrate were investigated .

尝试了Si基上生长GaN外延层的一种新的缓冲层材料-阳极氧化铝。

A new anodic alumina buffer layer was used in the growth of GaN on Si .

氮化工艺对GaN缓冲层生长的影响

Influence of Nitriding Technology on Growth of GaN Buffer

双缓冲层对GaN外延层中缺陷的影响

Influence of double-buffer layer on defects in GaN epilayer

Raman谱研究不同缓冲层结构对Si（1-x）Gex应力弛豫的影响

Influence of Buffer Structure on Relaxation of Stress in Si_ ( 1-x ) Ge_x by Raman Spectra

以Al2O3/AlN为复合绝缘缓冲层的ZnO-TTFT透过率的研究

Study on transmittance of ZnO based on transparent thin-film transistor with complex insulative buffer layer of Al2O3 / AlN

掺铬GaAs缓冲层的FET外延材料

The Epitaxial Material for FETs with Chromium - Doped GaAs Buffer layer

SiO2缓冲层对柔性ITO薄膜特性的影响

Effects of SiO_2 Buffer Layer on the Characteristics of Flexible ITO Films

GaN缓冲层生长温度必须控制在550℃。

The growth temperature of the GaN buffer layer must be controlled at 550 ℃ .

GaAs气相双层外延层中有源层与缓冲层过渡区宽度的研究

Study of the Width of the Transition Region between GaAs Active and Buffer Layers Grown by VPE

无GaAs缓冲层MBE生长InSb材料的工艺及其特性

Process and character of InSb grown by MBE without GA as buffer

Si（111）衬底上生长的GaN的形貌与AlN缓冲层生长温度的关系

Relation Between Morphology of GaN on an Si ( 111 ) and AlN Buffer Layer Grown Temperature

用于Si基片上外延BST薄膜的缓冲层的研究进展

Research Progress of Buffer Layers Used in Heteroepitaxial Growth of BST Thin Film on Silicon Substrate

基于低温InxGa（1-x）P组分渐变缓冲层的InP/GaAs异质外延

Heteroepitaxial growth of InP / GaAs using low-temperature In_xGa_ ( 1-x ) P graded buffers

Cu（In，Ga）Se2太阳电池缓冲层ZnS薄膜性质及应用

Properties and Applications of ZnS Buffer Layers for Cu ( In , Ga ) Se_2 Thin Film Solar Cells

半导体Si（111）上电沉积NiFe缓冲层薄膜

Electrodeposition of NiFe thin films as buffer layers on semiconductor Si ( 111 ) substrates

Nb、Ta缓冲层对Si3N4&LDZ125复合钎焊接头性能的影响

The Effects of Nb , Ta Buffers on the Strength of Si_3N_4 & LDZ125 Composite Brazing Joint