绝缘栅双极晶体管

绝缘栅双极晶体管（IGBT）充电器的原理及分析

Principle and analysis of charger with IGBT

通过分析焊接电弧动特性和绝缘栅双极晶体管（IGBT）特性，设计了焊接电弧电子模拟负载，提出了一种弧焊电源动特性测试的新的试验方法。

By analyzing the dynamic characteristics of welding arcs and the characteristics of IGBT , an electronic analog load of welding arcs was designed and a new experimental method for the dynamic characteristic test of arc welding power source was proposed .

绝缘栅双极晶体管（InsulateGateBipolarTransistor，IGBT）作为新型电力电子器件是整机系统提高性能指标和节能指标的首选产品。

IGBT ( Insulate Gate Bipolar Transistor ) enhances the performance index and the energy saving for the entire machine system .

借助双极传输理论导出了高速绝缘栅双极晶体管（IGBT）传输特性的物理模型。

The high speed insulated gate bipolar transistor ( IGBT ) transport model is derived by ambipolar transport theory in this paper .

IGBT的全称是InsulateGateBipolarTransistor，即绝缘栅双极晶体管，是近年来迅速发展起来的新型半导体器件。

The IGBT full name is Insulate Gate Bipolar Transistor , namely the insulation grid bipolar transistor , it is new semiconductor devices which rapidly develop in recent years .

VSC-HVDC系统是一种基于电压源换流器（VSC）和串联绝缘栅双极晶体管（IGBT）的新型直流输电技术。

VSC-HVDC system is a new type of HVDC technology , including voltage sourced converter ( VSC ) and insulated gate bipolar transistor ( IGBT ) .

对绝缘栅双极晶体管（IGBT）的工作特性进行了理论分析。由于IGBT所含的PNP晶体管是宽基区、低增益的，因此在分析其工作特性时用了双极传输理论。

An analysis of the characteristics of IGBT is made in this paper A wide base , low gain PNP , transistor is contained in IGBT , so the ambipolar transport theory is used to analyse the characteristics of IGBT .

本文提出互补横向绝缘栅双极晶体管CLIGBT的一种网络模型。

A new network model for the complementary lateral insulated-gate bipolar transistor CLIGBT is presented in this paper .

研制出He离子注入局域寿命控制SOI横向绝缘栅双极晶体管（SOI－LIGBT），有效地提高了器件的关断速度，且与集成电路工艺相兼容。

He ion implantation localized lifetime control SOI lateral insulated gate bipolar transistor ( SOI-LIGBT ) is proposed in this paper , which can effectively raise the turn-off speed of devices , which is compatibles with integrated circuit process .

对绝缘栅双极晶体管（IGBT）中宽基区、低增益pnp晶体管与普通高增益晶体管之间的差异进行了综合分析，结果表明，IGBT的工作特性必须采用双极传输理论来描述。

An analysis is made on the difference between the wide base , low gain PNP transistors in the IGBT and the conventional high gain PNP transistors . It is shown that the operating characteristics of the IGBT should be described with the ambipolar transport theory .

互补型横向绝缘栅双极晶体管的截止瞬态快速弛豫

Transient Turn-off Fast Relaxation of Complementary Lateral Insulated-Gate Bipolar Transistor

绝缘栅双极晶体管驱动保护集成电路设计

Demonstration of Insulated Gate Bipolar Transistor ICs with Drive Protection

空穴注入控制型横向绝缘栅双极晶体管

A Controlled Hole Injection Lateral Insulated Gate Bipolar Transistor

逆变器采用绝缘栅双极晶体管模块制造。

The inverter can be manufactured with the insulation gate bipolar transistor module .

刚玉自流浇注料的基础研究绝缘栅双极晶体管基础

The Basic Research of Alumina Based Self-Flow Castable

绝缘栅双极晶体管模块过电应力的研究

Research on Electrical Overstress on IGBT Module

横向绝缘栅双极晶体管的电压电流特性分析

Analysis of voltage-current characteristics of LIGBT

轻型高压直流输电是在电压源换流器和绝缘栅双极晶体管基础上开发出来的一种新型输电技术。

The light HVDC transmission is a new power transmission technology based on the voltage source converters ( VSCs ) and IGBT power semiconductors .

该系统采用IGBT（绝缘栅双极型晶体管）器件，PWM（脉宽调制）控制技术。

The system adopted insulated gate bipolar transistor ( IGBT ) as its main circuit and pulse-width modulating ( PWM ) technology .

近些年，绝缘栅双极型晶体管（IGBT）在现代电力电子技术中应用广泛。

In recent years the Insulated Gate Bipolar Transistor ( IGBT ) has been widely used in modern power electronic technology .

通过伴热电源控制器输出脉宽调制（PWM）信号，控制绝缘栅双极性晶体管（IGBT）逆变电路输出方波交流电，利用集肤效应原理对管道进行伴热。

The heat-ing power controller outputs PWM signals to control the IGBT inverter , which outputs alternating cur-rent . Pipeline is heated under the skin effect .

提出了一种用PSPICE程序模拟绝缘栅双极型晶体管（IGBT）特性的方法。

A method to simulate the characteristics of insulated gate bipolar transistor ( IGBT ) with PSPICE program is proposed in this paper .

本文阐述了MOS系列功率器件的特性、绝缘栅双极型晶体管和集成型功率器件技术，以及它们的应用。

The paper expounds MOS system power element 's characters , insulated gate bipolar transistor and integration type power element 's technology and its applications .

以MATLAB／Simulink为仿真工具，建立了以IGBT（绝缘栅双极型晶体管）为开关器件的串联型逆变器仿真模型，对提出的定角控制方法进行了仿真验证。

The implementation of this method is also studied . Simulation model of IGBT ( Insulated Gate Bipolar Transistor ) series resonant inverter based on MATLAB / Simulink is established .

根据这个模型，分析了中点箝位式（NPC）三电平变流器中内外绝缘栅双极型晶体管（IGBT）电压不平衡的原因。

Then the voltage unbalance between the inner and outer IGBTs of the Neutral Point Clamping ( NPC ) three level converter is analyzed on basis of this model .

结合无刷直流电机控制器的设计，提出了基于PSPICE仿真的绝缘栅双极型晶体管IGBT（InsulatedGateBipolarTransistor）功率损耗的估算方法。

Combined with the design of brushless DC electric motor controller , a method to estimate power loss of IGBT ( Insulated Gate Bipolar Transistor ) based on PSPICE simulation is proposed .

运用绝缘栅双极型晶体管（IGBT）对泵浦氙灯进行斩波放电，并采用间歇式长脉冲斩波技术，设计了一套能发射和控制长脉冲激光的Nd：YAG激光器。

By controlling the light wave-form of Xe lamp with insulated gate bipolar transistor ( IGBT ) and using the periodic long-pulse chopper technology , a long pulsed medical Nd : YAG laser was designed .

电源主电路是单电源供电，采用输出功率较大的全桥双逆变结构，比较地选取绝缘栅双极型晶体管IGBT作为主控开关功率转换器件。

Full-bridge dual inverter configuration is adopted by main circuit which is supplied by single power source . IGBT ( insulated gate bipolar transistor ) is comparatively chosen as switch component to perform energy transfer and power conversion .

用IGBT（绝缘栅双极性晶体管）和功率MOSFET（金属氧化物半导体场效应管）等固态功率开关器件代替氘闸流管开关是脉冲调制器技术的最新发展方向。

The recent development of pulse modulator is to use solid-state switches such as IGBT ( Insulated Gate Bipolar Transistor ) and power MOSFET ( Metal Oxide Semiconductor Field Effect Transistor ) etc. as substitute for hydrogen thyratrons .

首先采用三相桥式全控电路组成VSC，VSC的开关器件采用绝缘栅双极性晶体管（IGBT），门极信号按SPWM的方式产生。

Firstly , three-phase bridge full-controlled circuit is adopted to constitute the converters , in which IGBT are employed as the switch components , and the gate-firing signals of IGBT are obtained by use of SPWM method .