绝缘体

作为绝缘体很少有其他材料能与动物皮毛相媲美。

Few substances can equal fur as an insulator .

DNA分子的电荷输运实验显示DNA分子呈现出导体、半导体、绝缘体等丰富的电学性质。

The experiments of charge transport in DNA molecule have shown that DNA molecule may be conductor , semiconductor or insulator .

实际上并没有一个明显的界限将半导体和绝缘体分开。

There is no sharp line separating conductors from insulators .

nmAl粒子的电磁波吸收和金属-绝缘体相变

The EM Wave Absorption and Metal-Insulator Transition of A1 Particles of the Nanometer Level

半绝缘体GaAs单晶生长的研究进展

Progress in the Study of Growth of Semi-Insulating GaAs Single Crystals

陶瓷（V（1-x）Crx）2O3系统中金属&绝缘体相变的X射线衍射研究

X-ray Diffraction Study of Metal-Insulator Transitions in ( V_ ( 1-x ) Cr_x ) _2O_3 Systems

未加磁场下阻温关系测量表明，即使Mg含量高达60%，实验上仍观察到绝缘体到金属的转变。

Electric transport measurements indicate that even Mg content reaches 60 % , the insulator-metal transition is still observable .

基于UG的电连接器绝缘体参数化设计

Parametric Design of the Electrical Connector Insulator Based on UG

浅施主杂质态在n－Hg（1－x）CdxTe磁致金属－绝缘体相变中的作用

Effect of Shallow Donor on Magnetic-Field-Induced Metal-Insulator Transition in n-Hg_ ( 1-x ) Cd_xTe

与酸酐类固化剂组合的浇铸树脂，用于绝缘体，开关等，有高的机械强度和F级的绝缘性能。

Casting resin used with anhydride hardeners for making insulators and switchgear components of high mechanical strength , for class'F'Insulation .

b.污秽环境中绝缘体材料爬电距离及防霉菌的研究；

The study on creepage distance of insulation materials and anti-fungus in the contaminant environment ;

研究结果表明：随铁纳米线体积分数的提高，随机分布的Fe纳米线/绝缘体复合吸波材料的电磁参数也随之增大；

The results show that the electromagnetic parameters of the absorbing materials increase with increase of the iron nanowires volume fraction .

这些曲线都证明了薄膜具有金属-绝缘体相变特性，其相变温度为59°C，相变幅度超过两个数量级。

Both of the curves testify the metal-insulation phasetransition character of thin films , as the phasetransition temperature is 59 ° C and phasetransition range exceeds two magnitudes .

然而，较薄的绝缘体更容易受ESD的影响。

Thinner dielectrics , however , are more susceptible to ESD overstress .

自旋-轨道耦合对磁性绝缘体磁光Kerr效应的影响

Influence of spin-orbit coupling on magneto-optical Kerr effect of a magnetic insulator

绝缘体上外延硅薄膜MOS工艺的五管存储单元

Five-Transistor Memory Cells in ESFI MOS Technology

分别采用不同的背栅沟道注入剂量制成了部分耗尽绝缘体上硅浮体和H型栅体接触n型沟道器件。

Partially-depleted silicon-on-insulator ( PDSOI ) floating-body ( FB ) nMOSFETs and H-gate type body-contacted ( BC ) nMOSFETs are fabricated with different back channel implantation dosages .

顶电极对金属-绝缘体-金属器件I-V曲线对称性的影响

Effect of Choice of Top-Electrode on Symmetry of I-V Curve in MIM Elements

氢热处理绝缘体表面对金属-绝缘体-金属开关器件I-V特性的影响

Effect of Hydrogen-Treating the Surface of Insulator on I-V Characteristics in Metal-Insulator-Metal Element

介绍了对绝缘体实施电火花加工的基本原理，以及绝缘体型腔的EDM和绝缘板的WEDM的加工装置。

The basic principle of EDM technology in insulators and machining devices of EDM & WEDM are presented in this paper .

2）首次制作了埋嵌有Ge纳米晶的高K栅介质（Al2O3、ZrO2）形式的金属绝缘体半导体（MIS）器件，观察到了Ge纳米晶显著的电子存储特性。

2 ) Metal-insulator-semiconductor ( MIS ) structures with high-K gate dielectric ( Al2O3 / ZrO2 ) containing Ge nanocrystals were fabricated .

用DC-PCVD装置在绝缘体蓝宝石上沉积TiN

Deposition of tin on insulator alundum by DC - PCVD instrument

即氢能使PZT-5H铁电陶瓷从绝缘体变成n型半导体。

Hydrogen could induce a transition of the insulating PZT-5H ferroelectric ceramics to n-type semiconductor .

电解液－Si3N4绝缘体界面表面基／复合中心模型的研究

A Study of Surface-Site / Recombination Center Model for Electrolyte-Insulator ( Si_3N_4 ) Interface

随机位置电容和电阻构成的大型RC网络可以仿真两相材料（金属-绝缘体）的显微结构。

Very large networks of randomly positioned resistors and capacitors have been used to simulate the microstructures of real two-phase ( conductor-insulator ) materials .

发现经热处理后氧化钒薄膜出现了金属-绝缘体相变特性，相变温度约为55°C，相变幅度接近两个数量级。

It has been discovered that after the annealing , VOx thin films present the character of metal-insulation character , with the phasetransition temperature of 55 ° C and phasetransition range of about two magnitudes .

研究了STO薄膜金属绝缘体半导体（MIS）结构的介电和界面特性。

The dielectric and interface characteristics of STO with a metal insulator semiconductor ( MIS ) structure were investigated .

La（2/3）Ca（1/3）MnO3中绝缘体金属相变与CMR效应

The insulator metal transition and CMR effect in la_ ( 2 / 3 ) ca_ ( 1 / 3 ) mno_3

介绍了绝缘体上硅（SOI）材料的制作方法，阐述了SOIMOSFET器件的热载流子注入效应的失效机理。

The fabrication of SOI ( Silicon-on-insulator ) materials is introduced . The SOI MOSFET hot carrier degradation mechanism is discussed .

但是，低温下它们不是Mott绝缘体而是导电性差的坏金属。

However , they are poor metals rather than Mott insulators .