红外发光二极管

GaAs红外发光二极管加速寿命试验

Study on acceleration lifetime test for GaAs infrared LED

大衬底面积GaAs红外发光二极管

Research on GaAs IR LED with Large Substrate Area

适用于GaAs红外发光二极管生产的开管Zn扩散

Open Tube Zn Diffusion Available for the Production of GaAs lR LEDs

该装置采用低廉CCD摄像机，配以可见和红外发光二极管组成。

The device used the cheap CCD camera and visible light led and infrared ray led .

GaAs红外发光二极管的可靠性研究

Study on the Reliability of GaAs Light emitting Diode

为保证可靠和长寿命，采用了红外发光二极管（LED），光敏器件采用大功率光电池（PIN）。

To guarantee reliability and long service life , infrared LED and high power photocell ( PIN ) are adopted .

GaAlAs红外发光二极管1/f噪声研究

Study of 1 / f Noise in GaAlAs IREDs

GaAlAs红外发光二极管功率老化对其1/f噪声特性的影响

Effects of power aging on 1 / f noise characteristics for GaAlAs IR LED

金属支架0.5W红外发光二极管研究

Study on 0.5W Metal Framework Infrared LED

大功率无衬底N－GaAlAs／P－GaAs：Si单异质结红外发光二极管

High-power and Substrate-free N-GaAlAs / P-GaAs : Si Single-heterostructure Infrared Emitting Diodes

远红外发光二极管与水的浊度检测

The Far-infrared LED and the Detection of Water 's Turbidity

一种红外发光二极管的驱动电源设计

The Design of the Power Supply for Infrared Emitting Diode

基于红外发光二极管和光敏元件阵列的光电靶

Photoelectric Target Based on LED and Light Sensitive Element Array

红外发光二极管光电特性的测试分析

Test and analysis of photoelectronics properties of infrared LEDs

为了提高测量性能，采用近红外发光二极管作为摄影验光仪光源并改进了光阑结构。

In order to improve the performance , a new photorefractor is introduced whose source is composed of IR LED and changed aperture .

利用红外发光二极管作为闪光源，获得了合适的光强和0.5～1微秒的短余辉。

Infrared light emitting diode is used to deliver appropriate light pulse with a very short turn-off time in the range of 0.5 ~ 1 micro-s - econd .

该系统通过对红外发光二极管的特性研究，利用脉动光提高其发射距离，借助适当的光学装置，实现小功率发光器件模拟红外目标的功能。

Through researching the characteristic of infrared-LED , using the principle that infrared modulating can improve the distance of light , and utilizing the proper optical instruments , the system achieves the function that using low power radiation simulates the near-infrared target .