立方碳化硅

经对样品进行的X射线衍射（XRD），以及傅立叶变换红外光谱（FTIR）检测，证实该沉积薄膜为立方碳化硅。原子力显微镜（AFM）测试结果表明，所获样品晶粒大小为纳米尺度。

The Fourier Transform Infrared Spectroscopy ( FTIR ) spectra and X-ray diffraction ( XRD ) of the samples testified the formation of β - SiC in the thin films , and estimated the crystalline size for these thin films was nanometer-scale by a typical surface morphology of AFM .

结果表明，用溅射法在玻璃衬底上生长出微晶SiC（μc-SiC）薄膜和在Si（100）衬底上生长出立方碳化硅（β-SiC）薄膜。

The results show that the β - SiC films are grown on Si ( 100 ) of 600 ℃ and the μ c-SiC films are grown on glass by magnetron sputtering .

采用中间模板路线在600~700℃相对低的温度下，用四氯乙烯和四氯化硅作为原材料，用溶剂热的方法合成了立方相的碳化硅（β-SiC）纳米棒。

An intermediate template route was developed to grow cubic silicon carbide (β― SiC ) nanorods at relatively low temperature of 600 ~ 700 ℃ using tetrachloroethylene ( C_2Cl_4 ) and silicon tetrachloride ( SiCl_4 ) as carbon and silicon sources , respectively by a solvothermal method .