窄带隙半导体

可见光响应型窄带隙半导体光催化材料的研究及应用进展

Research and Applications of Visible Light Responsive Narrow Band Gap Semiconductor Photocatalytic Materials

新型窄带隙半导体BiVO4的制备与性能表征

The Preparation and Characteristics of the New Narrow Band-gap Semiconductor BiVO_4

具有可见光响应的窄带隙半导体光催化材料是近数十年以来多相半导体光催化技术的研究重点。

Visible light responsive semiconducting photocatalytic materials with narrow band gap have been the research focus of heterogeneous semiconductor photocatalysis in recent decades .

Ⅳ-Ⅵ族金属硫硒化物是重要的窄带隙半导体材料，传统的粗晶粒材料已经被广泛的研究和应用。

IV-VI metal chalcogenide ( S or Se ) compounds are important narrow-gap semiconductor materials and have been widely used in diverse areas .

因此，通过与窄带隙半导体、有机分子等构筑复合结构是提高其光电活性重要方法。

Therefore , construction of composite structures with narrow bandgap semiconductors or organic molecules would be an important method to enhance their photoelectric activity .

通过第一性原理的完整形式，基于全势能线性化增广平面波方法确定的精确能带结构和波函数，推算了技术上具有重要意义的窄带隙半导体超晶格中载流子俄歇复合时间。

We present theoretically the technologically essential Auger recombination lifetimes in narrow-gap semiconductor superlattices by a fully first-principles formalism , based on accurate energy bands and wave functions provided by the full-potential linearized augmented plane wave scheme .

黄铁矿结构的FeS2（pyrite）是一种具有氯化钠结构的窄带隙化合物半导体材料，具有优良的电学和光学性能。可以被用来制备太阳能电池光吸收层材料，光化学电池电极材料以及热电材料等。

FeS2 ( pyrite ) is a kind of narrow gap compound semiconductor with NaCl structure . It can be used as the absorption materials in solar cells , the electrode in the photochemistry battery from its excellent electric and optic properties .