碰撞电离

MOSFET栅下碰撞电离与击穿研究

The Research about Impact Ionization and Breakdown under Gate of MOSFET

极化（e，2e）碰撞电离的研究进展

Review of polarized ( e , 2e ) impact ionization

电子与Ar的高电荷态离子的碰撞电离

Electron-impact Ionization Cross Sections and Rates for Highly Charged Argon Ions

原子Na的电子碰撞电离

Electron Impact Ionisation of Atom Na

类Na离子电子碰撞电离产生类Ne离子激发能级布居的速率系数

Rate coefficients for populating excited levels of Ne-Like ions by electron-impact ionization of Na-like ions

考虑碰撞电离下的亚微米MOSFET的二维数值模拟和分析

Numerical Simulation and Analysis of Submicron MOSFET with Impact Ionization

负微分迁移率和碰撞电离对GaAs光导开关非线性特性的影响

The effect of negative differential mobility and impact ionization on nonlinearity of GaAs photoconductive semiconductor switch

本文结合各种文献和数据建立了Ar气在真空中的电子碰撞电离模型。

In this thesis , we develop an ionization model of energy electron colliding with residual Ar gas .

收集板上的正、负电压信号分别由激光烧蚀金属Cu产生离子和电子发射而引起，高能电子对环境气体具有碰撞电离的作用。

Electron launching resulted in positive voltage signal of collector plate , and ion launching resulted in negative voltage signal of collector plate .

利用初态程函近似的连续扭曲波方法研究了He2+离子与H原子的碰撞电离过程。

The He 2 + + H Impact Ionization process is investigated using a continuum distorted wave method with the eikonal initial_state ( CDW_EIS ) approximation .

里德伯Cs原子与CCl4分子的碰撞电离研究

The study of collisional ionization properties of Rydberg Cs atoms with CCl 4 molecules

运用电子碰撞电离、强流粒子束平衡体系理论方程与等离子复合特性等理论对这种新型X射线激光器的工作原理及其方案的可行性作了进一步的理论分析与探讨。

Its working principle and feasibility are analysed and proved by many theory such as electron impact ionization , equilibria system of high-energy particle beams and recombination properties of plasma produced .

近些年来，电子碰撞电离的（e，2e）过程越来越受到人们的广泛关注。

In recent years , a number of new directions have been pursed in ( e , 2e ) investigations of election-impact ionization processes .

计算表明GaAs材料的负微分迁移率引起的微分负阻，会导致阴极附近电场的动态增强，使得阴极附近的电场达到本征碰撞电离发生的阈值电场，从而引发本征碰撞电离的发生。

The simulation results show that the negative differential resistance due to negative differential mobility of GaAs lead to electric field enhancing enough near cathode to give rise impact ionization .

碰撞电离是辐射导致生物学损伤的重要过程，其中产生的次级电子是癌细胞DNA双链断裂的主要原因。

Impact ionization is an important process in radiation damage of biological . The secondary electrons caused by the impact ionization process are the main reason which can lead to DNA double stand breaks ( DSBs ) of cancer cells .

考虑到电子能量分布，认为电子碰撞电离速率系数f取决于电子的迁移速度VE和扩散速度VD，而不象以前假设电离速率系数f为一常数。

E. the ionization coefficient f of electron collision with neutral moleculars is contributed from both of electron drift velocity and diffusion velocity while it was assumed to be a constant in the previous model .

SF6/N2混合气体在均匀场电极中的击穿强度可由两种气体组分的有效电子碰撞电离系数算得。

The breakdown strength of SF6 / N2 gas mixtures in a uniform field gap can be calculated if the effective ionization coefficients of the two component gases are known .

采用这种双沟道结构能够有效地提高沟道中电子的迁移率，减小碰撞电离对HEMT性能的影响；

This structure can availably improve the mobility of electrons in the channels and also reduce impact ionization effects on the performance of InP HEMT .

应用MonteCarlo方法，模拟了Tokamak装置中的中性粒子的输运过程，模型考虑了中性粒子在等离子体中的电荷交换、电子碰撞电离、离子碰撞电离等离化过程。

The transport process of neutral beam ions in HT-7 Tokamak was simulated by Monte-Carlo method . The neutral-plasma collision processes taken into account , which include the charge-exchange , electron impact ionization , ion impact ionization , etc.

环形栅器件的背栅阈值电压漂移比H型栅器件小33%，其原因是碰撞电离使环形栅器件的体区电位升高，在埋氧化层中形成的电场减小了辐照产生的损伤。

The back gate threshold voltage shift of closed-gate is about 33 % less than that of H-gate device . The reason should be that the body potential of the closed-gate device is raised due to impact ionization , and an electric field is produced across the BOX .

模型考虑了载流子间散射、SRH和俄歇复合、碰撞电离等物理效应。

Included in the model were the physical mechanisms such as carrier-carrier scattering , SRH and Auger recombination , impact ionization and so on .

碰撞电离产生AuL＿3空穴态定向行为的研究

A study on the behavior of the alignment for l_3 vacancy state in Au by impact ionisation

SiGe/Si异质结对电场分布产生显著影响，同SiPMOS相比电场和碰撞电离具有多峰值分布的特点；

The SiGe / Si heterojunction affects the electric field distribution obviously , thus the distribution of the electric field and the impact ionization in the SiGe pMOS show a character of multi-peak-distribution when compared with the Si pMOS .

采用luckyelectron模型对器件的R-V曲线进行了拟合，结果证实器件反偏微分电阻下降的主要原因是由于pn结耗尽区光生载流子的激增，碰撞电离导致的光电倍增效应所引起。

The R-V curve of photodiode was fit by " lucky electron " model . It verifies that due to plenty of photo-generated carrier occurred in the depletion region , photocurrent multiplication induced by electron impact ionization is the primary reason of decreasing reverse-bias differential resistance .

激光辅助的快质子对氢原子的碰撞电离

Laser - assisted Collisional Ionization of Atomic Hydrogen by Fast Proton

R&矩阵程序包和电子碰撞电离的计算程序

The r - matrix package and calculations of electron impact ionisation

电子与离子碰撞电离速率系数的一个改进的拟合公式

Improved fitting formulas of rate coefficient of electron ion collisional ionization

原子的电子碰撞电离截面的高精度计算

An accurate calculation for impact ionization cross sections of atoms by electron

电子碰撞电离的近似计算

Approximate calculation of ionization cross section by electron impact

激光金等离子体的电子离子碰撞电离速率系数

Collisional ionization rate coefficients of electron impact ionization in a highly ionized Au plasma