直接跃迁

通过线性外推，建立了直接跃迁的（αE）2模型，并确定了薄膜的Eg值（3.5~3.86eV）。

The direct transition model of (α E ) ~ 2 versus photon energy E_g was established and a band gap energy E_g was obtained by linear extrapolation .

硒化镉（CdSe）是直接跃迁宽禁带隙的Ⅱ&Ⅵ族化合物半导体材料。

Cadmium Selenide ( CdSe ) is a ⅱ & ⅵ compound semiconductor with direct transition , wide-band-gap .

GaAs是发展最快的第二代化合物半导体材料，具有高迁移率、直接跃迁型能带结构等优点，适合制造高频、高速器件和电路。

GaAs is a compound semiconductor which has the best development in semiconductor materials , which is used to fabricate the devices and circuits of high frequency and speed because of its high mobility ratio and direct transition energy band structure .

由TiO2反胶束溶胶制备一系列TiO2纳米晶薄膜，对膜的吸收光谱和激发发射光谱研究表明制备的膜存在有二种模式的跃迁，直接跃迁和间接跃迁。

A series of TiO2 nanocrystalline thin films were fabricated by using dip coating method from TiO2 reverse micelle solution . The studies on absorption and exciton emission spectra showed that both the indirect and direct transition exist in these TiO2 nanocrystalline thin films .

砷化镓（GaAs）是一种重要的化合物半导体材料，具有电子迁移率高、直接跃迁型能带结构等优点，适合于制造高频、高速、耐高温、抗辐射和发光器件。

Gallium Arsenide ( GaAs ) is important compound semiconductor material . It has high electron transfer rate and direct transition energy band structure . GaAs is fit to be made into high frequency , high speed , endure heat , anti - radiation and luminescence apparatus .

对晶体内部的直接跃迁和间接跃迁性质进行了详细的研究，确定了在光学间接跃迁过程中起主要贡献的声子对应于Nb-O-Zn伸缩振动模式。

The direct and indirect transitions were analyzed . It was confirmed that the indirect transition is mainly due to the contribution of the phonon corresponding to the Nb-O-Zn bond stretching mode .

在不同陈化时间，浸渍相同次数制得的膜具有相同的直接跃迁禁带宽。

The films made at different aging time with same dip times have the same direct transition bandgaps .

为了评估可见光吸收，本章计算了带边态之间的直接跃迁矩阵元。

To evaluate the possibility of visible light absorption , the matrix elements for direct transitions between band edge states were studied .

在趋向于一条引力轨道的过程中，心脏的运动轨迹将越过斥力轨道而直接跃迁到另一条引力轨道，发生突变。

In the process toward the attractive orbit , the track of heart beating transits to another attractive orbit directly over the repulsion orbit , catastrophe occurrence .

虽然硅是一种非直接跃迁半导体，但它的发光机制同样服从于直接跃迁半导体的广义普朗克辐射定律。

Although silicon is an indirect semiconductor , light emission from silicon is governed by the same generalized Planck 's radiation law as the emission from direct semiconductors .