电阻温度系数

掺磷a-Si∶H红外薄膜电阻率及电阻温度系数研究

Study on the Resistivity and TCR of P-doped a-Si ∶ H Thin Films

铂粉物理特性对厚膜铂电阻温度系数的影响

Effect of Performance of Platinum Powder on TCR of Thick Film Platinum Resistance

接枝炭黑/聚乙烯导电复合材料正电阻温度系数（PTC）效应研究

Study on PTC Characteristics in Grafting Carbon Black / Polyethylene Conductive Composites

退火对PECVD制备的掺磷硅薄膜及其电阻温度系数影响的研究

Influence of Annealing on TCR of Phosphor-doped Amorphous Silicon by PECVD

用离子束增强沉积从V2O5粉末制备高热电阻温度系数VO2薄膜

Preparation of vanadium dioxide thin film with high temperature coefficient of resistance from V_2O_5 powder by ion beam enhanced deposition

多晶材料，研究了它们的电阻温度系数（TCR）。

The temperature coefficient of resistance ( TCR ) of these samples have been studied .

研究了这一合金薄膜电阻温度系数TCR随热处理温度的变化以及它与非晶度的关系。

The temperature coefficient of resistance with tempering temperature and its relationship with non-crystallinity was studied .

对电阻温度系数（TCR）的分析可确定溅射系统的工作点。

SYSTEM The working point can be defined by analyzing thermal coefficient of tantalum nitride resistors .

有的氧化钒（x≈2）在室温附近具有较高的电阻温度系数，可达（-2～-4）%K-1。

VO x ( x ≈ 2 ) has temperature coefficient of resistivity as high as ( - 2 ~ - 4 ) % K - 1 near room temperature .

La（0.7-x）GdxSr（0.3）MnO3体系的电阻温度系数研究

Investigation on Temperature Coefficient of Resistance in La_ ( 0.7-x ) Gd_xSr_ ( 0.3 ) MnO_3 System

TaN薄膜具有宽电阻率、低电阻温度系数以及自钝化特性而被广泛应用于微波功率电阻器中。

TaN thin films possess wide resistively , low temperature coefficient of resistance and chemical inert properties , which can be widely used in microwave power resistors .

目前突变型PTC元件电阻温度系数的测量方法各种各样，因此测试结果缺乏唯一性和可比性。

Resistance temperature coefficient ( RTC ) of step function PTC thermistor depends on it 's measurement methods , therefor the obtained results are not unique and comparable .

氧化钒薄膜由于具有高电阻温度系数（TCR），近年来被广泛应用于非制冷红外探测及红外成像领域。

Vanadium oxide thin films are widely used in the field of uncooled IR detecting and imaging for its high temperature coefficient of resistance ( TCR ) .

然后用光刻和刻蚀的方法制作电学测试所需的图形。对于ITO薄膜的电学测试包括对其电阻温度系数和响应因子的测量两部分。

And then , photolithography and wet etching were used to pattern the ITO films for electrical measurement , which involved the measurement of temperature coefficient of resistance and the gauge factor .

非晶态样品在4.2K到300K的温度范围内具有负的电阻温度系数。

The as-prepared metallic glassy sample exhibits negative temperature coefficient of the resistivity in temperature range from 4.2 K to 300 K.

非晶态Ni-Si-B合金薄膜的电阻温度系数和稳定性

Temperature coefficient of electrical resistance and stability of amorphous ni-si-b alloy films

氧化钒薄膜作为非制冷红外探测器的热敏材料，要求具有高的电阻温度系数（TCR）与合适的电阻值，以满足器件的应用。

As the detecting material of uncooled infrared detectors , vanadium oxide ( VOX ) thin films need high temperature coefficient of resistance ( TCR ) and suitable film resistance for using of the device .

通过制备具有高电阻温度系数（TCR）的氧化钒薄膜、掺氮氧化钒薄膜和黑金吸收层并利用微加工技术手段分别将它们集成在探测器上，提高了微测辐射热计的性能。

Bolometer performance has been improved by micromachining technology-the preparation and integration of high temperature coefficient of resistance ( TCR ) VOx , nitrogen-doped vanadium oxide and gold black of high infrared absorption , respectively .

为了研究开发具有低电阻率和正电阻温度系数（PTCR）的高居里点陶瓷材料，以BaCO3和PbO为原料制备了一组La掺杂的陶瓷材料。

A series of La-doped ceramics was prepared with the materials of BaCO 3-PbO powders in order to obtain the ceramics with high Curie point , low electrical resistivity and PTCR ( Positive Temperature Coefficient of Resistivity ) .

运算放大器推荐使用OP07系列，电路中的固定电阻温度系数要求优于50PPM；

OP07 series of operational amplifer is recommended ; the fixed temperature coefficient of resistance in the circuit must be over50PPM .

介绍了一种采用反应溅射工艺，通过控制不同气氛的分布制备VOx薄膜的方法，并制备出电阻温度系数（TCR）优于-2%的非制冷红外探测器用VOx薄膜。

Preparation of VO x films by reactive sputtering and controlling the distribution of gases is introduced . VO x films for uncooled infrared detectors with the TCR overmatch of - 2 % are successfully prepared .

根据薄膜理论和工艺实验，采用直流磁控溅射技术对薄膜沉积的工艺参数进行了优化，获得了电阻温度系数TCR≤20×10-6/℃的锰铜薄膜，与块材接近，实现了锰铜压力传感器的薄膜化。

C. Magnetron Sputtering in this paper . The TCR ( Temperature Coefficient of Resistance ) of the films were less than 20 × 10 - 6 / ℃ using optimized deposition parameters , which were adjacent to the bulk material , realized the films of manganin pressure sensors .

选择适当的杂质和退火条件可以将VO2薄膜的相变温度降低到室温附近，获得较高室温电阻温度系数的薄膜。

The temperature of the vanadium dioxide film could be reduced to room temperature effectively by selecting the proper impurity element and the annealing conditions . It is possible to increase the temperature coefficient of resistance ( C_T , R ) of the films for IR application .

一种用于热敏电阻温度系数测量加热器的制作

The making of a heater for measuring heat-sensitive resistance temperature coefficient

电阻温度系数研究及其在可靠性早期监测中的应用

The Application of Temperature Coefficient of Resistance on Reliability Early Detection

室温红外探测薄膜电阻温度系数测试技术

Test of Temperature Coefficient of Resistance for Room Temperature IR Detection Thin Film

耐热性优，电阻温度系数小，呈直线变化。

Super heat dissipation , small linear temperature coefficient .

用非平衡电桥测金属导体的电阻温度系数

The measurement of the coefficient of resistance temperature of metallic conductor by unbalanced bridge

真空蒸发钛薄膜的电阻温度系数

Resistance - Temperature Coefficient for Vacuum-Evaporated Titanium Films

考虑金属电阻温度系数分布效应的电器典型热件等效网络

Equivalent Network of Typical Apparatus Heating Components for Considering Distribution Effect of Metal Resistance Temperature Factor