电击穿

交联形成的三维网格抑制热击穿与DCP交联剂分解和结晶度降低促进电击穿的三者共同作用，是造成上述现象的原因。

This is attributed to the competition between cross-linking inhibited thermal breakdown and the acceleration of electric breakdown caused by the thermal decomposition of DCP agent and the decrement of crystallinity .

聚偏氟乙烯（PVDF）具有优异的耐化学腐蚀性、耐热性、电击穿强度大、机械性能良好以及电化学性能稳定等特点，应用主要集中在石油化工、电子电气和氟碳涂料三大领域。

Polyvinylidene fluoride ( PVDF ) has such outstanding properties as chemical corrosion resistance , thermostability , strong electric breakdown intensity , good mechanical behavior and electrochemical stability , and it is widely used in petrochemical industry , etl-semko and fluoro-carbon coatings .

空间电荷对PE薄膜电击穿的影响

The Effect of Space Charge on the Electrical Breakdown in PE Films

利用电击穿试验和SEM分析了能量参数对陶瓷层绝缘强度的影响；

Breakdown test and SEM analyzed the regularity influenced of energy parameter on dielectric strength of ceramic coatings .

SF6/N2-高分子薄膜复合绝缘电击穿特性的试验研究

Experimental Study on Electric Breakdown Behaviour of SF 6 / N 2-Polymer Film Composite Insulation

中间退火对薄SiO2膜电击穿特性的影响

EFFECTS OF INTERMEDIATE ANNEALING PROCESS ON ELECTRICAL BREAKDOWN CHARACTERISTICS OF THIN OXIDES Electrical Breakdown Characteristics of Thin Films of SiO_2

PSZ对超细晶铁电陶瓷电击穿的影响

Influence of PSZ on Electric Breakdown of Ultrafine Ferroelectric Ceramics

研究了HDPE/GN导电复合材料在动态电击穿过程中温度的变化，结果表明当HDPE/GN导电材料发生电击穿时，HDPE的相态发生了变化。

The changes in temperature of HDPE / GN conducting composites in dynamic electrical breakdown process indicated that phase transition of HDPE appeared when the electrical breakdown occurred .

测试了样品的I-V特性、电击穿特性、电容特性和光照下电流的变化。最后，对薄膜磁性能进行了测量，得到了较好的结果。

Its characteristics are measured . At last , the magnetic properties of the films were measured , with the result being satisfactory .

紧凑型MILO结构能避免电击穿，电子束发射的对称性较易控制。

Breakdown can be avoided in the compact MILO and the symmetry of beam emission can be controlled easily .

本文研究中间退火处理对薄SiO2膜电击穿特性和高频电容-电压特性的影响。

In this paper the effects of intermediate annealing process on electrical breakdown properties and hight frequency capacitance - voltage characteristics of thin oxide films are studied .

分别研究了各种添加相对CuW合金显微组织、静态性能及真空电击穿性能的影响。

The effects of different additions with different content on microstructures and properties including the static property and the vacuum breakdown property of Cu-W alloys were investigated respectively .

本实验显示，SPEFs在通过不可逆性电击穿杀伤肿瘤细胞的同时，也能诱发机体抗癌免疫反应，增强机体的免疫功能，为临床应用提供治疗机理。

The results also showed that SPEFs could not only kill tumor cells but also induce antitumor immune response and improve the immune function of the host efficiently .

超高压固体复合绝缘材料的电击穿研究

Researches on Electrical Breakdown Behaviour or EHV Solid Composite Insulation Materials

低气压介质阻挡放电击穿特性的研究

Study on Breakdown Characteristic of Low Pressure Dielectric Barrier Discharge

蒙脱土/聚酰亚胺复合薄膜的电击穿破坏特性

Characteristics of electrical breakdown for MMT / PI hybrid films

抗电击穿试验中几个问题讨论

Discussion about Several Issues on Voltage - resisting Breakdown Test

介质阻挡放电击穿场强影响因素的研究

Study on influencing factors of electric breakdown field in DBD

富勒烯薄膜上二维金属渗流系统的电击穿现象

Electric breakdown of percolation system of 2D metal film on fullerene underlayer

激光诱导碱金属卤化物晶体电击穿与共振时间量子化

Laser-Induced electric breakdown in alkali-halide crystals and resonance time quantization

开关接点之间的电击穿现象分析

Electric Shock A Phenomenal Analysis about the Electric Puncture of Switch Contact

金属材料表面二次冶金对电击穿的影响

Influence of the Second Surface Metallurgy of Metallic Materials on Vacuum Breakdown Behaviours

聚合物的空间电荷效应与电击穿机理

On the mechanism of electric breakdown and effect of space charge in polyethylene

真空电击穿的材料显微组织影响因素

The Influence of Microstructure of Alloys on Vacuum Breakdown

高补偿锗的低温电击穿与复合失能

Low - temperature breakdown in highly compensated germanium and energy dissipation by recombination

阳极氧化过程中电击穿理论的研究进展

Development of electric breakdown theory of anodic oxidation

铌酸锂晶体电击穿特性的研究

Study on Dielectric Breakdown Character of LiNbO_3 Crystal

根据实验结果，本论文提出了可逆介电击穿理论模型。

Reversible dielectric breakdown theoretic model was founded on the basis of experimental results .

抗电击穿装置的容量指标

Capacity Parameters of Anti - Electric shock Device

硅靶低温射频磁控溅射沉积氧化硅薄膜的电击穿场强

The breakdown field of silicon oxide thin film deposited by rf-reactive magnetron sputtering on low temperature