多量子阱

设计和分析了InGaAs/GaAs多量子阱SEED中的一种用于倒装焊的新型谐振腔结构。

A new resonant cavity structure of the InGaAs / GaAs MQW SEED arrays has been designed and analyzed .

用此材料制备的掩埋异质结（BH）条形结构多量子阱激光器具有极低阈值电流4～6mA。

The threshold currents of buried heterostructure ( BH ) MQW lasers with this strained layers structure were 4 ￣ 6 mA mostly .

InGaN/GaN多量子阱蓝光LED电学特性研究

Electrical Characteristics of InGaN / GaN MQW Blue Light-emitting Diodes

3对LED器件多量子阱有源区载流子输运与复合跃迁的分析。

The carrier transportation and transition in LED active layer had been analyzed .

Si掺杂的AlGaInP/GaInP多量子阱光学特性

Optical characteristics of AlGaInP / GaInP multiple quantum wells with Si-doping

退火对AlGaInP/GaInP多量子阱LED外延片性能的影响

Influence of Thermal Annealing to the Characteristics of AlGaInP / GaInP Multiple Quantum Wells LED Wafers

Si掺杂对AlGaInP/GaInP多量子阱性能的影响

Influence of Si-doping on the Characteristics of AlGaInP / GaInP Multiple Quantum Wells

Siδ掺杂GaAs多量子阱的磁量子输运

Quantum magnetotransport of Si δ - doping GaAs multiple quantum well

Z扫描法研究nc-Si/SiNx多量子阱材料非线性光学特性

Study on Non-linear Optical Properties of nc-Si / SiN_x MQW with Z-scan Method

多量子阱光波导中非线性TM波的有限元解

Finite-element solution of nonlinear TM waves in multiple quantum well waveguides

多量子阱结构不均匀性的TEM观察

Cross - Sectional TEM Observation of Non - Uniformity in Multiple Quantum Well Structures

GaAs／AlxGa（1－x）As多量子阱掩埋条形激光器

GaAs / Al_xGa_ ( 1-x ) As MQWs BH Laser Diodes

Zn（1-x）CdxSe/ZnSe多量子阱光伏效应研究

Study on photovoltaic effects of Zn_ ( 1-x ) Cd_xSe / ZnSe multiple quantum wells

非线性包层多量子阱波导的TE波

TE Waves in Multiple Quantum Well Waveguides with Nonlinear Cladding

InGaAs（P）应变多量子阱激光器的理论分析与优化设计

Theoretical Analysis and Optimum Design for InGaAs ( P ) Strained Multiple - Quantum - Well Lasers

ICP刻蚀对InAsP/InP应变多量子阱的损伤

Investigation of ICP Etching Damage of InAsP / InP Strained Multiple Quantum Wells

多量子阱波导TE、TM模场分析

Analysis of Field Distribution for TE and TM Modes in a Multiple Quantum Well Waveguide

多量子阱GaAs／AlxGa（1－x）As电极的瞬态光电流行为

Transient Photocurrent Behavior of Multiple Quantum Well GaAs / Al_xGa_ ( 1-x ) As Electrode

Zn（0.76）Cd（0.24）Se／ZnSe多量子阱的共振喇曼光谱

Resonant Raman spectra in zn_ ( 0.76 ) cd_ ( 0.24 ) se / znse MQWs

通过采用多量子阱结构的载流子传输模型，数值模拟了这种结构的SOA的超快动态特性。

A carrier transport model for MQW SOAs is used to numerically simulate the ultrafast dynamic characteristics of this asymmetry MQW SOA .

InP基应变补偿多量子阱的研究进展

Recent Progress in Research on Strain - compensated MQW on InP Substrates

MOCVD生长InGaAs/InGaAsP多量子阱光泵微碟激光器

Optically Pumped InGaAs / InGaAsP MQW Microdisk Lasers Grown by MOCVD

基于三层模型的多量子阱激光器调制特性的SPICE模拟

Modulation Properties of Multi Quantum Wells Laser Analyzed by A Three-level Model in SPICE

GaxIn（1-x）P/AlGaInP多量子阱的吸收/反射光谱：多光束干涉的影响与消减

Absorption and Reflectivity of GaInP / AlGaInP Multiple Quantum Wells : Influence and Reduction of Multi-Beam Interference

对称非线性包层平板多量子阱波导TE模的传播特性

Propagation Characteristics of TE Modes in a Multiple-Quantum - Well Waveguide with Two Symmetric Nonlinear Claddings

本文研究了半绝缘GaAs／Al0.3Ga0.7As多量子阱的电光效应和光折变效应.用光调制反射谱分析了样品的结构；

The electro & optical effect and photorefractive effect of GaAs / AlGaAs multiple quantum wells have been studied .

InGaAs/InAlAs多量子阱结构的量子限制Stark效应研究

Study on the quantum confined Stark effect of ingaas / inalas multiple quantum well structures

对InGaAs/InGaAlAs多量子阱SLA端面增透膜参数进行了优化设计，并给出优化结果。

Optimal result of antireflection coating on InGaAs / InGaAlAs multiple quantum well SLA is given .

Ge（0.4）Si（0.6）/Si多量子阱与Ge/Si短周期超晶格样品中的深中心

Deep Centers in Ge_ ( 0.4 ) Si_ ( 0.6 ) / Si Multiple Quantum Well and Ge / Si Strained Superlattice

InGaN/GaN多量子阱蓝光LED的p-GaN盖层的MOCVD生长研究

Investigations of p-GaN cap layers of InGaN / GaN MQW Blue LEDs grown by MOCVD