零带隙

氧化锌（ZnO）是一种宽带隙的多功能半导体材料，具有优良的物理和化学性质。石墨烯作为一种零带隙的半导体材料，具有极高的载流子迁移率和特殊的输运特性。

Zinc oxide is a kind of wide band-gap semiconductor which has excellent physical and chemical properties . As a gapless semiconductor , graphene exhibits ultrahigh carrier mobility and fascinating transport phenomenon .

石墨烯掺杂后其零带隙的特点就会遭到破坏，能带会被拉开成为半导体，使得石墨烯的导电性受到影响。

Graphene doped after its zero band gap will be destroyed , the characteristics of band will be away as semiconductor , makes the conductivity of graphene is affected .

作为一种零带隙的半导体材料，石墨烯具有极高的载流子迁移率和特殊的输运特性，在场效应晶体管、光伏电池、液晶显示等领域具有应用前景。

As a gapless semiconductor , graphene exhibits ultrahigh carrier mobility and fascinating transport phenomena that qualify it for applications in field effect transistors , photovoltaic cells and liquid crystal devices .

含左手材料异质结构光子晶体的零平均折射率带隙的展宽

Zero Averaged Refractive Index Gaps Extension by Using Photonic Heterostructures Containing Left Materials

本文同时研究分析了康托结构中的零有效折射率带隙。

We also investigate and analyzed the property of the zero-band gap of the cantor structure .

我们发现，零平均折射率带隙不随结构的层数的变化而变化，也不随结构尺寸的改变而改变。

It is demonstrated that the zero average refraction index ( ZARI ) gap is independent of the cell number and scaling of the structure .

相比于基于布拉格或者零均折射率带隙的光量子阱结构，含单负材料的光量子阱结构的对称束缚态对光的入射角和偏振更不敏感。

Compared with previous confined states of photonic quantum-well structures based on the Bragg or zero-average-index gap , the confined states of the structures are less sensitive to the incident angle and polarization .