气相沉积技术

利用气相沉积技术，制备了SixCy层和C层相间的硅碳复合薄膜材料。

Silicon-carbon composite film was prepared with vapor deposition technology .

多弧物理气相沉积技术制备（TiAl）N超硬膜

Super acids development of ( tial ) n Advanced Films by PVD arc process

金属有机化学气相沉积技术（Metal-OrganicChemicalVaporDeposition，简称MOCVD）是制备基于氮化物和ZnO等材料的光电子器件的一种新技术。

MOCVD ( Metal-Organic Chemical Vapor Deposition ) is a new technology to produce nitride materials and ZnO-based optoelectronic devices .

现场试验结果表明，经采用物理气相沉积技术进行TiN涂层处理后，钻井泵泵阀使用寿命较未采用这项技术处理前提高了将近3倍。

The result of field test shows that the service life of the drill pump valve treated with TiN coating Increases by three times .

本实验采用催化辅助化学气相沉积技术制备了ZnO纳米线阵列体系，研究了工艺条件对ZnO纳米线阵列的生长的影响，并讨论了ZnO纳米线阵列的生长机理。

ZnO nanowires have been grown on metal coated substrates by Chemical Vapor deposition and catalytic technology and studied the factors which effect the growth of ZnO nanowires .

本工作采用螺旋波等离子体增强化学气相沉积技术，在单晶Si及石英衬底上制备了纳米SiC薄膜。

Nanocrystalline silicon carbide ( SiC ) thin films have been deposited by helicon wave plasma enhanced chemical vapor deposition ( HWP-CVD ) on single crystalline silicon and quartz substrates .

用Raman散射谱研究了以SiH4/H2为气源，用等离子体增强化学气相沉积技术，低温制备的一系列硅薄膜的微结构特征。

The microstructure of silicon thin films fabricated at low temperature by plasma enhanced chemical vapor deposition ( PECVD ) using H2 / SiH4 has been studied by Raman scattering .

为解决上述问题，采用常压金属有机物化学气相沉积技术在活性炭表面沉积构成纳米TiO2固定化非均相光催化剂。

To overcome these problems , the atmospheric pressure metal-organic chemical vapor deposition ( MOCVD ) technology was used to load TiO2 onto the surface of activated carbon .

对不同的本底真空条件下，采用甚高频等离子体增强化学气相沉积技术沉积的氢化微晶硅（μcSi∶H）薄膜中的氧污染问题进行了比较研究。

Investigations on the oxygen contamination in the μ c-Si ∶ H thin films deposited by very-high-frequency plasma-enhanced chemical-vapor deposition ( VHF-PECVD ) technique with and without load lock chamber have been reported in this paper .

测试样品是利用化学气相沉积技术在MgO（111）基片上制备的c轴织构的MgB2超导薄膜，薄膜的超导转变温度和转变宽度分别为38K和0.1K。

K , was prepared on MgO ( 111 ) substrates by the chemical vapor deposition method .

化学气相沉积技术（CVD）是一种常见工艺，是通过气体间的化学反应制备新材料的过程，以满足某些新的性能。

Chemical vapor deposition ( CVD ) is a common process . The chemical reac - tion between gases forms new materials that can meet some new properties .

对等离子体增强化学气相沉积技术（PECVD）制备的微晶硅（μc·Si）薄膜的电导率、光学带隙和晶化率随温度和功率的变化规律进行了研究。

Microcrystalline silicon film was prepared by the plasma enhanced chemical vapor deposition ( PECVD ) . The performance of μ c-Si : H film changed with pressure and temperature has been investigated .

本文探讨了利用微波ECR全方位离子注入技术和等离子增强化学气相沉积技术来制备类金刚石膜。

This paper has discussed preparing Diamond-like Carbon films by means of micro-wave ECR plasma source ion implantation and plasma enhanced chemical vapour deposition .

MOCVD是金属有机物化学气相沉积技术的简称，即通过MOCVD设备，在衬底上生长材料晶体的一种方法。

MOCVD is an abbreviation form for Metal Organic Chemical Vapor Deposition , which is a method used to grow material crystal on substrate via MOCVD device .

以金属有机化合物（MO）四甲基锡[Sn（CH3）4]为源物质，采用等离子体增强化学气相沉积技术（PECVD），在玻璃片上制备了SnO2–x薄膜。

The SnO2 – x thin films were prepared on glass by MO-PECVD process , in which metal-organic compound Sn ( CH3 ) 4 was used as a source materials .

研究了超微粒子制备技术在功能包装中的应用，特别是与超微粒子气相沉积技术，CVD合成技术，PVD技术以及SOL-GEL技术等结合在各种功能包装材料中的应用方法及前景。

The Application of Ultrafine Powder Preparation Technology in Functional Packaging especially its current application and prospect in varied function materials in ways of vapour deposit technology and Sol-Gel technology were reviewed .

介绍了一种同时利用等离子尖端放电、空心阴极效应和反应气相沉积技术，在碳钢表面形成具有扩散层和沉积层的TiN复合渗镀层新工艺技术。

A new technique of TiN multi-permeation layers composed of diffusion and deposition layers on the surface of carbon steel by using plasma point discharge , hollow cathode effect and reactive vapor deposition at the same time are introduced .

采用硅烷（SiH4）直接分解的化学气相沉积技术（CVD），在钢基体表面生成硅扩散涂层。X射线衍射（XRD）分析表明硅扩散涂层的主要成分是铁的硅化物FeSi。

Si diffusion coating is formed on steel substrate surface by chemical vapor deposition of SiH_4 . The XRD pattern reveals that the main composition of Si diffusion coating is silicide FeSi .

以乙炔（C2H2）为碳源，铁为催化剂，通过化学气相沉积技术在单晶硅衬底上制备了碳纳米带。

Carbon nanoribbons ( CNRs ) are obtained by Fe catalyzed chemical vapor deposition on a silicon substrate using C_2H_2 as carbon source .

所用样品采用螺旋波等离子体化学气相沉积技术制备，利用Raman散射、红外吸收和光学吸收技术对薄膜的微观结构、氢的键合特征以及能带结构特性进行了分析。

The samples were prepared by helicon wave plasma chemical vapor deposition technique . Raman scattering , infrared absorption and optical absorption measurements were used to analyze the microstructure , hydrogen bonding configurations and energy band structures of the deposited films .

本论文采用微波等离子体化学气相沉积技术，以三甲基硼为硼源，通过控制B/C比例，在Si（100）基片上沉积了不同硼掺杂量的纳米晶和多晶金刚石薄膜。

In this paper , boron-doped nanocrystalline and polycrystalline diamond films with different boron contents were prepared on Si ( 100 ) substrates through controlling B / C ratio in the gas by microwave plasma chemical vapor deposition using trimethyl boron as a boron source .

利用电子回旋共振（ECR）微波等离子体辅助化学气相沉积技术、工作气氛为丙酮，在光学玻璃衬底上得到了光滑、致密、均匀的类金刚石薄膜。

Smoothing , dense and uniform nano crystalline diamond like carbon films are prepared by using electron cyclotron resonance ( ECR ) microwave acetone plasma chemical vapor deposition ( CVD ) method .

以SiCl4和H2为气源，用等离子体增强化学气相沉积技术，在250℃的低温下，研究氢稀释度对多晶硅薄膜结构特性的影响。

Polycrystalline silicon films were prepared from SiCl_4 diluted with hydrogen by plasma_enhanced chemical vapor deposition at a low temperature of 250 ℃ . The effect of hydrogen dilution on their structure and optical properties were investigated .

报道了利用低压金属有机物化学气相沉积技术生长纳米ZnS薄膜，然后，将ZnS薄膜在氧气中于800℃温度下进行热氧化制备高质量纳米ZnO薄膜。

In this paper , we report the photoluminescence from high quality nanocrystalline ZnO thin films . The high quality nanocrystalline ZnO thin films are prepared by thermal oxidation of ZnS films at 800 ℃, which are deposited by low pressure metal organic chemical vapor deposition technique .

用苯（C6H6）和四氟甲烷（CF4）混合气体作源气体，用微波电子回旋共振等离子体化学气相沉积技术制备了含氟非晶碳膜（aC：F）。

A C : F thin films are deposited by microwave electron cyclotron resonance plasma chemical vapor deposition ( ECR CVD ) using CF 4 and C 6H 6 as source gases .

采用甚高频等离子化学气相沉积技术（VHF-PECVD）制备了系列p-i-n型微晶硅太阳电池，研究了电池有源层硅烷浓度的变化对电池性能的影响。

Several series of p-i-n solar cells were prepared by very high frequency plasma enhanced chemical vapor deposition ( VHF-PECVD ) technique . The effect of silane concentration of the active layer on the performance of microcrystalline solar cells was investigated .

脉冲激光气相沉积技术现状与进展

Pulsed Laser Vapor Deposition Technology : Current Status and Research Progress

低温等离子体在CF/树脂基复合材料中的应用低温等离子体增强化学气相沉积技术制备碳纳米管

Application of plasma technology in carbon fiber reinforced polymer composites

化学气相沉积技术在锂离子电池电极材料中的应用

Application of chemical vapor deposition for electrode materials of lithium ion batteries

低压化学气相沉积技术制备锗反蛋白石三维光子晶体

Fabrication of Germanium Inverse Opal Three-dimensional Photonic Crystal by LPCVD