气相掺杂

  • 网络gas phase doping;Gas Dopsiton;RVD;doping in vapor phase growth
气相掺杂气相掺杂
  1. 借助红外光谱、X射线衍射研究了气相掺杂对聚对苯撑结构的影响。

    With the help of IR and X-ray , the influence of gas-doping on PPP structure was discussed .

  2. HCl气相掺杂对聚苯胺电导率影响规律的探讨

    Effect of HCl gas doping on the conductivity of polyaniline

  3. 稀土气相掺杂BaTiO3基PTC陶瓷的制备与电性能

    Preparation and electric properties of BaTiO_3-based PTC ceramics doped by gaseous rare earth

  4. 论文首先研究了采用PECVD制备高品质a-Si薄膜的工艺,通过气相掺杂有效地调整了薄膜电阻率;

    Firstly , high-quality a-Si films are prepared using PECVD . Resistivity of a-Si film is well controlled by gas doping .

  5. Fz硅气相掺杂(GGD)的计算方法

    Calculating method of fz-silicon gas doping

  6. 硅区熔气相掺杂工艺的研究

    Research on Floating Zone Gas Doping of Silicon

  7. 本文介绍了目前区熔掺杂方法的现状、区熔气相掺杂的优点和基本原理及工艺。

    In this paper , the present status of the silicon single Crystal floating zone doping process is essentialized .

  8. 本文报导了利用灯丝热解CVD方法在单晶硅衬底表面气相合成硼掺杂p-型金刚石薄膜的方法和结果,并对其晶体结构、半导体性质及发光特性进行了较为系统的研究。

    The methods and results about synthesis of B doped P-type diamond films on the single crystal silicon substrates by CVD method with the pyrolytic filament were reported . The systemic investigation of their structure , properties of semiconductor and luminosity was made .

  9. 气相外延氮化镓掺杂生长的研究

    The investigation on the gas phase doping epitaxial growth of GaN

  10. 硼掺杂p-型半导体金刚石薄膜的气相合成及其掺杂行为的研究

    Preparation of High Quality Boron Doped P-Type Semiconducting Diamond Films and Investigation of Doping Behavior