气相掺杂
- 网络gas phase doping;Gas Dopsiton;RVD;doping in vapor phase growth
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借助红外光谱、X射线衍射研究了气相掺杂对聚对苯撑结构的影响。
With the help of IR and X-ray , the influence of gas-doping on PPP structure was discussed .
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HCl气相掺杂对聚苯胺电导率影响规律的探讨
Effect of HCl gas doping on the conductivity of polyaniline
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稀土气相掺杂BaTiO3基PTC陶瓷的制备与电性能
Preparation and electric properties of BaTiO_3-based PTC ceramics doped by gaseous rare earth
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论文首先研究了采用PECVD制备高品质a-Si薄膜的工艺,通过气相掺杂有效地调整了薄膜电阻率;
Firstly , high-quality a-Si films are prepared using PECVD . Resistivity of a-Si film is well controlled by gas doping .
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Fz硅气相掺杂(GGD)的计算方法
Calculating method of fz-silicon gas doping
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硅区熔气相掺杂工艺的研究
Research on Floating Zone Gas Doping of Silicon
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本文介绍了目前区熔掺杂方法的现状、区熔气相掺杂的优点和基本原理及工艺。
In this paper , the present status of the silicon single Crystal floating zone doping process is essentialized .
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本文报导了利用灯丝热解CVD方法在单晶硅衬底表面气相合成硼掺杂p-型金刚石薄膜的方法和结果,并对其晶体结构、半导体性质及发光特性进行了较为系统的研究。
The methods and results about synthesis of B doped P-type diamond films on the single crystal silicon substrates by CVD method with the pyrolytic filament were reported . The systemic investigation of their structure , properties of semiconductor and luminosity was made .
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气相外延氮化镓掺杂生长的研究
The investigation on the gas phase doping epitaxial growth of GaN
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硼掺杂p-型半导体金刚石薄膜的气相合成及其掺杂行为的研究
Preparation of High Quality Boron Doped P-Type Semiconducting Diamond Films and Investigation of Doping Behavior