导率

  • 网络conductance;conductivity;Thermal conductivity;Stomatal Conductance
导率导率
  1. 高热导率低热膨胀系数Cu-ZrW2O8复合材料的制备与性能

    Preparation and properties of Cu-ZrW_2O_8 composites with high thermal conductivity and low thermal expansion coefficient

  2. Bi(12)SiO(20)晶体暗电阻率与光电导率的测量

    Measurement of Dark Resistivity and Photoconductivity for Bi_ ( 12 ) SiO_ ( 20 ) Crystal

  3. 当磷的浓度达到某适当值时,合金膜的光电导率可以增加2&3个数量级,同时导电类型由P型又变为N型。

    As the P concentration increases to a suitable quantity , the photoconductivity of the alloy en-hances 2-3 orders of magnitude and the conduction mechanism changes from P to N type .

  4. SiC材料具有高电流击穿场、高饱和电子漂移速率、高热导率等特性,使得SiC材料在功率器件领域具有巨大的潜力。

    SiC materials with a high electric breakdown field , a high saturated electron drift velocity and a high thermal conductivity , have a great potential in power devices .

  5. 并用不同种类培养基及不同浓度2,4-D、BA对高羊茅种子进行愈伤诱导,结果表明以9mg/L2,4-D浓度的MS培养基的愈伤诱问导率最高,达66.7%左右;

    The induction of callus in tall fescue was studied on different media and different combination of 2,4-D , BA .

  6. 碳化硅(SiC)是一种具有较大的电子饱和漂移速度、高临界击穿电场和高热导率的宽禁带化合物半导体材料。

    Silicon carbides ( SiC ) are a kind of wide bandgap compound semiconductor material which have greater saturated electron drift velocity , higher critical breakdown electric field and higher thermal conductivity .

  7. 而与含有过渡带的新侵入剖面模型相对应的参数模型除包括冲洗带电导率、原状地层电导率和过渡带中点半径外,还有一个反映过渡带电导率变化的指数N。

    The parameter model corresponding to the new invasion profile model not only comprises flushed zone conductivity , undisturbed zone conductivity and transition zone radius , but also comprises an index N which reflects the transition zone 's change pattern .

  8. 由宽带隙导致的高击穿场强以及高热导率使GaN尤其适用于高能和高频器件中的应用。

    Furthermore , the large band gap results in a large breakdown field , which together with its high thermal conductivity , makes GaN especially suitable for high-power and high-speed applications .

  9. 最近,高体积分数的SiC颗粒增强铝基复合材料还由于其高热导率和低热膨胀系数等特性在半导体和电子行业有了新的应用前景。

    Recently , it was found that the composite with high volume fraction of SiC particulate could be used in semiconductor and electronic industry due to its high thermal conductivity and low thermal expansion coefficient .

  10. 笔者认为:BeO瓷在近期相当一段时期内,仍然是大功率真空电子器件领域内最为广泛应用的高热导率陶瓷。

    It is believed that the BeO ceramic will still have a most wide application in the near future .

  11. 碳化硅(SiC)由于具有宽禁带、高击穿场强、高热导率等优异的物理及电子学特性,使其在高温、高频、大功率及抗辐射等领域具有广阔的应用前景。

    SiC has wide application in the field of high temperature , high frequency , high power and radioresistance because of its excellent physics and electronic characteristics , such as wide band gap , high breakdown electrical field and high thermal conductivity .

  12. 第三代半导体材料碳化硅(SiC)由于具有宽带隙、高临界击穿电场、高热导率以及高载流子饱和漂移速度等优异特性,而广泛应用于高温、大功率、高频、抗辐射等领域。

    Silicon Carbide is being intensely pursued around the world for high temperature , high power , high frequency and high radiation applications because of its wide bandgap , high electric field strength , high saturation electron velocity and high thermal conductivity .

  13. 半绝缘SiC由于其宽禁带、高临界击穿电场、高电子饱和漂移速度、高热导率等优良特性,使其非常适合作为大功率光导开关的基体材料。

    Semi-insulating silicon carbide ( SiC ) is an attractive material for application as power compact photoconductive semiconductor switches ( PCSS ) due to its large band gap , high critical electric field strength , high electron saturation velocity and high thermal conductivity .

  14. 碳化硅(SiC)材料具有宽禁带、高电子饱和漂移速率、高临界击穿场强、高热导率等优良特性,在高频、高温、大功率、抗辐射等领域拥有极为广阔的应用前景。

    Silicon carbide ( SiC ) has found wide application in the fields of high-frequency , high-temperature , high-power and radio-resistant due to its excellent properties such wide gap , high electron saturation drift velocity , high critical electric field and high thermal conductivity .

  15. SiC材料具有宽禁带、高临界击穿电场、高热导率、高载流子饱和漂移速度等优良特性,这些特性决定了它在高温、大功率、高频和抗辐照等领域的有着广泛的应用前景。

    Silicon carbide ( SiC ) has great potential application of high temperature , high frequency , high power and irradiation domains for its superior properties , such as wide bandgap , high conductivity , high saturated electron velocity and high critical breakdown field .

  16. SiO2气凝胶是一类轻质介孔材料,具有超低密度、高孔隙率、高比表面积和低热导率等特点,在许多领域具有潜在的应用前景。

    Silica aerogels are a class of light mesoporous materials with low density , high porosity , high surface area and low thermal conductivity . Because of their unique properties , silica aerogels have great potential application future in many fields .

  17. SiC作为目前最热门的半导体材料之一,因其具有宽禁带、高击穿电场、高载流子饱和漂移速率和高热导率等许多优点,在微电子领域有着广泛的应用前景。

    Silicon carbide ( SiC ) is one of the most popular semiconductor materials with great potential in many microelectronics applications due to its excellent properties such as wide band gap , high breakdown electric field , high electron saturated drift velocity and high thermal conductivity .

  18. SiC以其特有的大禁带宽度、高临界击穿场强、高电子迁移率、高热导率等特点,成为制造高温、高频、大功率、抗辐照及光电集成器件的理想材料。

    Silicon carbide ( SiC ), which has large band gaps , high critical breakdown field strength , high electron mobility and good thermal conductivity , is considered as an ideal material to manufacture the optoelectronic integrated device with high temperature , high frequency , high power and radioresistance .

  19. 类金刚石碳(DLC)膜,具有高硬度、高耐磨性、低摩擦系数、高热导率、高红外透过率、高化学稳定性等一系列与金刚石膜相似的优异性能。

    Diamond-like carbon ( DLC ) film is an amorphous carbon film that exhibits a series of excellent properties such as high hardness , good chemical inertness , high thermal conductivity , good transmittance in infrared and low wear coefficient .

  20. AlN是一种重要的半导体材料,由于具有宽带隙、高临界击穿电场、高热导率、高载流子饱和漂移速度等优越的特性,在微电子和光电子领域具有广泛的应用前景。

    As an important semiconductor material , AlN has a bright future in the microelectronic and optoelectronic fields with its unique combination of properties such as wide bandgap , high breakdown field , high thermal conductivity and high saturated electron drift velocity .

  21. 最后分析了LED芯片采用chip-on-board技术封装在新型高热导率复合材料散热板上的散热性能。热膜型中温辐射板及裙型、踢脚线型散热板室内热环境研究

    Later , the heat performance of LED package utilizing chip-on-board technology on a novel composite materials with high thermoconductivity was studied . Investigation on Medium-temperature Radiant Panels , Skirt-type Radiator 、 Plinth-type Radiator and Their Indoor Thermal Behaviors

  22. 复合材料具有优异的绝热性能,Z向热导率为14.5W/(m.K),X-Y面内热导率为5.0W/(m.K)。

    The composites possess superior insulation property with thermal conductivity of 14.5 W / ( m · K ) at Z-direction and 5.0 W / ( m · K ) at X-Y plane .

  23. 而Nd:GdVO4晶体具有高热导率、大的发射截面和吸收截面、适中的寿命和偏振激光输出等优点,更适合作为高重频、高峰值功率DPSSL的激光介质。

    While as a laser medium has excellent characteristics of high thermal conductivity , larger emission cross-section and higher absorption coefficient , moderate upper state lifetime and polarized laser output , Nd : GdVO_4 crystals are more suitable for Q switch laser with high repetition rate and peak power output .

  24. SPPEK/PWA膜的质子导率100%的相对湿度下80℃时质子导率为0.17S/cm,室温甲醇渗透系数为1.02×10-7cm2/s,比Nafion117膜低20多倍。

    The proton conductivity of the composite membrane reached the maximum of 0.17S/cm at 80 ℃ under 100 % relative humidity . The methanol permeability of SPPEK / PWA was more than 20 times lower than that of Nafion 117 .

  25. Zr-Al-C陶瓷是一类在航天航空领域具有广阔应用前景的三元层状陶瓷,具有高熔点、高热导率及良好的抗氧化性能等特性,在超高温环境中能够保持物理和化学稳定性。

    Zr-Al-C ceramics are a class of layered ternary ceramics with widely prospect in applications in the aerospace industry , which of physical-chemical stability during the high temperature due to their high melting point , high thermal conductivity and good oxidation resistance .

  26. 平均场动力学与冷密夸克物质色导率

    Mean Field Dynamics and Color Conductivity of Cold and Dense Quark Matter

  27. 高热导率氮化铝陶瓷制备技术进展

    Progress of fabricating high thermal conductivity aluminum nitride ( AIN ) ceramics technology

  28. 详细地综述了高热导率AIN基片的研制现状与动向。

    The studies on high thermal conductivity AlN substrate are reviewed in detail .

  29. 应用热扩散技术对油松栓皮栎比导率的研究

    Study on Specific Conductivity of Pinus tabulaeformis and Quercus variabilis Using Thermal Dissipation Technology

  30. 导热断裂与低热导率岩层组合容易形成地热异常,形成层状热储和带状热储。

    Combination of heat conducting faults and low conductive stratas easily form geothermal anomaly region .