存储器件

闪存是当前非易失性半导体存储器市场上的主流存储器件。

Currently , flash are the dominant memory devices in the non-volatile semiconductor memory market .

对制备出的电存储器件的电学性能，如成品率、状态比、阈值分布等进行了研究。

The electric properties of the memory devices are measured , such as yield , on-off ratio , and threshold voltage distribution .

一个用单管单元做成的4096单元MOS存储器件

A 409B-bit MOS Memory Device with Single-Transistor Cells

CAM（内容可寻址存储器）是一种快速匹配存储器件，在通信、雷达等许多领域有着广泛的应用。

The content addressable memory ( CAM ) is a kind of fast matching memory . It 's widely used in communication and radars .

动态存储器（DRAM）是重要的存储器件，现场可编程门阵列（FPGA）在计算机硬件设计领域的应用也十分广泛。

DRAM is an important memory device , the application of FPGA is quite extensive in the area of hardware design .

本文在FPGA信号处理平台上，用QDRSRAM作为雷达多周期数据存储器件，实现了动目标处理功能。

The MTI processing is implemented with QDR SRAM as the multicycle data memory on the FPGA signal processor .

Flash具有低成本、容量大、非易失、抗震荡等优点，在目前的嵌入式系统中被广泛用作外存储器件。

The Flash has a low cost , high capacity , non-volatile , and anti-vibration , etc. , so it is widely used as a external storage device in the current embedded systems .

随着非挥发性存储器件的尺寸持续缩小，SONOS结构存储器件又重新被重视。

Due to scaling down of nonvolatile memory device , SONOS configuration memory is regarded again .

由于目前光域的随机存储器件（RAM）还很难实现，光分组交换中的竞争现象非常严重；此外，目前已有的各种标签处理技术都存在着先天的不足。

However , since it is impossible to construct practical optical random access memory ( RAM ) buffer nowadays , the contention is very serious in OPS . Besides , all the optical label processing schemes nowadays have their inherent shortcomings .

便携式哑人说话机采用单片机作为核心控制单元，ISD语音芯片作为语音合成及存储器件。

This paper introduces a design of speaking machine for mute people by adopting the single chip computer as the key control module , ISD pronunciation chip as storing and the speech synthesis device .

铁电薄膜场效应晶体管存储器件的失效机制及器件力学

The failure mechanism and device mechanics of ferroelectric thin film field-effect transistor memory

集成铁电存储器&新型快速、抗辐照、非挥发性存储器件

Integrated Ferroelectric Memories ── A New Type of Fast Access and Radiation Hard Nonvolatile Memories

如果这种电阻变化行为能够可控，将可能开发出新型的存储器件。

If such resistive switching behavior is controllable , a novel memory device will be possibly developed .

联机存储器件联机存储器件

On line memory device

一种非易失性存储器件的制造方法，包括制备包括单元阵列区的半导体衬底。

A method of fabricating a nonvolatile memory device includes preparing a semiconductor substrate including a cell array region .

这种电荷俘获存储器件的基本结构是由隧穿层、存储层和阻挡层等功能层构成。

The charge trapping memory is composed of the tunneling layer , the charge trapping layer and the blocking layer .

可以推测，聚合物在衬底表面的这种状态将对偶氮光存储器件的稳定性和工作效率产生不良影响。

This geometrical configuration of CAP on the surface of the substrate was proposed to damage the stabilities and efficiency of azobenzene derivatives based optical storage devices .

多铁性磁电材料同时具有铁电性、铁磁性和磁电效应等多种性能，它为新功能存储器件的设计提供了可能性。

Since multiferroic magnetoelectric ( ME ) material has ferroelectric , ferromagnetic and magnetoelectric properties , it is possible to use this material for the design of storage device .

由于对信息存取容量的要求日益增加，磁性存储器件的存储密度正以每年60%的速度递增。

The capacity of magnetic disk systems is growing year by year with the advance of the information-oriented society , and the areal density of magnetic recording is increasing by 60 % every year .

光分组交换最大的挑战在于仍然没有成熟的光逻辑和光存储器件，相比而言，光线路交换和光突发交换更具有可实现性。

The biggest challenge for OPS is that the required optical technologies such as optical logic and buffer devices are far from mature . Comparatively , OCS and OBS are easier to be implemented .

铁电钛酸锶钡薄膜具有十分优越的铁电／介电性能，在可调谐微波器件、动态存储器件，以及热释电探测器等方面具有很好的应用前景。

Ferroelectric ( Ba , Sr ) TiO3 thin films have excellent ferroelectric / dielectric properties , and own good application prospect in tunable microwave devices , dynamic random access devices , and pyroelectric detector devices .

由于该隧道结系统是一最基本的记忆存储器件，具有广阔的应用前景，同时又存在诸多有趣的物理特性，现已成为一个很活跃的研究课题。

Because the system of tunnel junctions is a basic device for memory store and has a wide application in many areas , and because there exist many interesting physical features in the system , it has become an active theme for research .

对Ge2Sb2Te5材料的结构、形貌和电学特性进行了表征，将材料应用于不挥发存储单元器件中并研究了器件性能。

The performance of nonvolatile phase-change-memory material Ge_2Sb_2Te_5 and its device cell was investigated .

但是对光因特网来说，由于光逻辑与光存储等器件不成熟，发展全光分组交换，技术上异常困难。

But as for optical Internet , because of lacking of optical logical devices and optical buffer , very high bit-rate all-optical packet switching is difficult to realize .

光折变空间孤子在光通信、光互连、光存储光学器件设计和光计算等领域的广阔应用前景，近十几年，对于光折变空间孤子的研究一直是人们关注的热点。

In the recently 10 years , the researches of the photorefractive spatial solitons have attracted more and more attention of researchers for their wide potential application in many fields such as optical communication , optical interconnection , design of optical storage devices and optical computation .

采用软件模拟时序使CPU的I/O口模拟I2C总线，实现了单片机与时钟芯片、温湿度传感器、存储芯片等器件的数据交换。

With time series simulation software , the CPU 's I / O ports simulate I2C bus and exchange data with clock chips , temperature humidity sensors , memory chips and other devices .

在计算、光互联以及光存储等对器件响应速度和精度都有极高要求的应用领域中，光寻址空间光调制器呈现出以往电子计算处理方式无法比拟的优点。

Optical addressing modulator overtakes other kind of electronic computer in such field as compute , optical interconnect communication and light memory , which requires devices of considerable corresponding speed and high precision .

随着市场对Flash存储器件集成度要求的不断提高，传统Flash器件数据存储的可靠性与器件的工作速度、功耗、尺寸等方面的矛盾日益凸现。

As the market demand is increasing for a higher level of integration in flash memory devices , traditional flash memories are much more exposed to problems arising from reliability , working speed , power consumption and size limitations .

高温环境下工作的封装有相变材料的热沉，一方面利用固液相变潜热存储系统吸收电子器件散发的热量，另一方面还要吸收从高温环境传递过来的热量。

Heat sink encapsulated with phase change material for high temperature environment absorbs heat from electronic devices and high temperature ambient .

主要包括三个基本模块：射频模块、数据采集与存储模块和低速器件管理模块。

The system mainly consists of three basic modules : RF modules , data acquisition and storage module and low-speed devices management module .