合金靶材

合金靶材合金靶材
  1. W和W/Ti合金靶材的应用及其制备技术靶电流对掺钨类金刚石膜的结构与摩擦学行为的影响

    Application and manufacturing technology of tungsten and tungsten-titanium targets Influence of Target Current on the Structures and Friction Behavior of W-doped DLC Films

  2. 利用多弧离子镀技术、采用Ti-Al-Zr合金靶材在高速钢基片上沉积(Ti,Al,Zr)N超硬反应膜。

    The ( Ti , Al , Zr ) N super-hard reactive films have been deposited on high-speed steel substrate by multi-arc ion plating technology and under condition of cathodic targets of Ti-Al-Zr alloys with different compositions .

  3. 铝铜合金靶材的微观结构对溅射沉积性能的影响

    Effects of Target Microstructure on Al-Cu Alloy Sputtering and Depositing Performance

  4. 铬合金靶材采用热压方式,其密度大于98%。

    The density of chrome alloy target after hot pressing exceeds 98 % .

  5. 惰性气体热压法制备W/Ti合金靶材研究

    Preparation of W-Ti Sputtering Targets under Inert Atmosphere

  6. 作为制备溅射薄膜材料的铝合金靶材也获得了相应的应用。

    As a material used to prepare sputtering films , aluminum alloy targets have been widely used .

  7. 与单向轧制相比,合金靶材多向冷轧形成了较强的110纤维织构。

    Compared with the unidirectional rolling , stronger fibre texture 110 was observed during clock cold rolling .

  8. 粉末冶金高纯铬和铬合金溅射靶材烧结工艺研究

    Technological Study of Powder Metallurgical High-pure Chrome for Sputtering Target Material

  9. 由于集成电路、光碟及平面显示器等产业规模越来越大,这些高技术产业对各种超高纯金属及合金溅射靶材的需求量愈来愈多。

    With the development of VLSI , CD and flat panel display ( FPD ), the demands of sputtering target materials with super high purity are greatly increased in IT .

  10. 高纯铝及其合金溅射靶材是集成电路和平面显示领域布线的常用原料,铝连线工艺有其技术成熟、工艺稳定、价格相对低廉的优势。

    Sputtering targets of high-purity aluminum and its alloys are used commonly in integrated circuits and flat display field . Aluminum connection process has many advantages , such as mature technology , stable process , low price and so on .

  11. 文中得出以下主要结果:1.首次采用Al-N共掺的方法制备了p型ZnO薄膜,其中以N2O作为受主源,以Zn:Al合金作为溅射靶材。

    The main results are as follows : 1 . Al-N co-doped p-type ZnO has been firstly prepared by magnetron sputtering , with N2O as an acceptor source and Al as a donor source .

  12. 集成电路电极布线用铝合金薄膜及其溅射靶材

    Aluminum Alloy Films and Sputtering Targets for Semiconductor Integrated Circuit Wiring and Electrodes

  13. 这种离析效应导致了合金涂层成分控制及合金靶材成分设计的困难。

    This demixing effect leads to the difficulties in the control of alloy composition of coating and in the design of composition of alloy cathode target .