内建电场

内建电场对纤锌矿InxGa（1-x）N/GaN单量子点光学特性的影响

Influence of the Built-in Electric Field on Optical Properties in Single In_ ( x ) Ga_ ( 1-x ) N / GaN Quantum Dots

将GaAs光电阴极发射层掺杂浓度由体内到发射表面从高到低的进行指数掺杂，能在发射层形成一个恒定的内建电场，有利于光电子的逸出。

Exponential-doping photocathodes , in which from the GaAs bulk to the surface the doping concentration is distributed exponentially from high to low , can form a stable built-in electric field in the active layer , and the electric field facilitates the excited photoelectron emission .

HBT中基区内建电场的物理机制及其理论分析

Physical Mechanism and Simulations of Base Built in Electric Field for SiGe Base HBT witha Linearly Graded Ge Profile

星用FR-4电路板内建电场分析计算研究

Study on Computation of Build-up Electric Field in FR-4 Circuit Board for Satellite

循环伏安曲线表明，光照时Ni非均匀掺杂的TiO2薄膜改变了体系的氧化还原电位，说明了薄膜内建电场的建立。

The cyclic voltammetry curves revealed the oxidation-reduction potential shift in the reaction system of the non-uniformly doped TiO2 thin film under UV irradiation , which indicated that the inner electric field formed .

讨论了半导体pn结内建电场和接触电势的形成与可测性，回答了在半导体物理学pn结内容教学中学生经常会提出的一个似是而非的问题。

The formation and measurability of built in electrical field and contact potential in a semiconductor pn junction are discussed , and a paradox that students usually raised is answered .

提出了一种改进UTC-PD高速性能的新方法，即在UTC-PD吸收层采用Gaussian渐变掺杂引入内建电场。

A novel method to improve the high speed performance for UTC-PD by utilizing Gaussian doping to introduce an electric field in the absorption region is proposed .

结果表明：有源区内建电场在外界电流注入条件下逐渐受屏蔽，这一效应在高In组分InxGa1-xN/GaNMQWs材料的发光复合机理中占有重要地位。

The results show that the screening of internal electric field by injection current plays an important role in the radiation recombination process of In_xGa_ 1-xN / GaN-MQWs materials .

超晶格中内建电场的压力调制

Pressure Tuning of In-built Electric Fields in Superlattices

内建电场对纳结构半导体材料功函数调制研究

Study the Modulator Approaches of Work Function of Semiconductor Material with Nanostructure by Built-in Electric Field

外界条件可引起超晶格中内建电场的变化，进而引起隧穿电流的变化。

The external condition could induce the change of piezoelectric field in superlattices and further induce the change of tunneling current .

此外强内建电场也造成当杂质位于左量子点时相应的施主束缚能比较大。并且在左量子点的中心位置施主束缚能会得到一个最大值。

Moreover , the donor binding energy is larger when the impurity is located inside the left dot due to the effects of the strong built-in electric field .

在此也较为详细的分析了纤锌矿结构材料中存在的应变和极化现象，以及由自发极化和压电极化所引起的强内建电场。

Moreover , the strain and polarization in the wurtzite structure and the strong built-in electric field induced by the spontaneous and piezoelectric polarizations have also been discussed in detail .

内建电场会改变多量子阱的结构，使其由方阱变为斜阱，导致其带阶发生改变。本文定量地给出了由内建电场导致的价带阶变化及其斜率。

The potential profiles of MQW will be changed due to built in electric fields , from square wells into sloped wells , which lead to the increments of band offsets .

与实验结果对比发现，该模型适于模拟窄势阱结构超晶格，对于宽势阱则须考虑内建电场的作用。

In comparison to the experiment results , our model is rather suitable for simulating the narrow-quantum-well structures , while for the wide-quantum-well structures , the build-in field should be considered .

通过求解内建电场作用下的少子连续性方程，得到了指数掺杂阴极量子效率公式和分辨力公式，理论计算了指数掺杂阴极的量子效率与分辨力。

Based on the band structure model , we solved the quantum efficiency equations and resolution equations of exponential-doping cathodes from the minority continuity equations , and using these equations calculated the theoretical quantum efficiency and resolution of exponential-doping cathodes .

如果内建电场足够强，倍频吸收将成为双光子响应的主要机制.这与传统的认为双光子响应就是双光子吸收的观点不同。

If the intensity of the built-in electric field is strong enough , the double-frequency absorption will be the main factor of the two-photon response , which is different from the conventional opinion that the two-photon response is just the two-photon absorption .

本论文主要对InxGa（1-x）N/GaN量子阱中的三阶非线性极化率进行了研究，并探讨了由于晶格失配造成的内建压变电场对量子阱中光学非线性极化率的影响。

The study focused on the third-order nonlinear susceptibilities x ~ ( 3 ) in In_xGa_1-xN / GaN quantum well , and also included the influence of built-in piezoelectric on the nonlinear susceptibilities .

在分析了了内建压变电场随In含量的变化情况之后，又用密度矩阵的方法推导了三阶非线性极化率的计算公式。

After analyzing the relationship between the magnitude of built-in electric field and the In composition , we gained the formalism of the third-order susceptibilities with the density matrix formula .