低能电子衍射

dī nénɡ diàn zǐ yǎn shè
  • low energy electron diffraction
低能电子衍射低能电子衍射
  1. Si(111)-2×1重构表面的自动张量低能电子衍射研究

    Study of Si ( 111 ) - 2 × 1 Reconstruction by Automated Tensor Low Energy Electron Diffraction

  2. 描述了用低能电子衍射(LEED)研究不同温度下在Si(100)-c(8×8)表面吸氢引起的一系列相变过程。

    Phase transitions on a clean reconstructed Si ( 100 ) - c ( 8 × 8 ) surface induced by atomic hydrogen adsorption at different temperatures have been studied using low energy electron diffraction ( LEED ) .

  3. Si(113)表面原子结构的低能电子衍射研究

    A LEED study of atomic structure on si ( 113 ) surface

  4. 用低能电子衍射谱计算过渡金属吸附CO的表面结构

    The surface structure calculated of CO adsorbed on the transition metals surfaces with low energy electron diffraction spectra

  5. 用低能电子衍射计算Ni(001)Ni(110)和Ni(111)表面化学吸附硫的表面原子层间距

    Calculation of surface atomic layers distances of chemisorption sulfur on ni ( 001 ), ni ( 110 ) and ni ( lll ) surfaces by low-enery-electron diffraction

  6. 低能电子衍射仪(LEED)是研究单晶表面结构的有效工具。

    LEED is an effective instrument for the study of surface structures of single-crystals .

  7. 本文提出了一个由低能电子衍射能带理论计算所确定的GaAs(111)&(2×2)表面的空位模型。

    In this papar , a Vacancy-model of the GaAs ( 111 ) - ( 2 × 2 ) surface determined from band theory of Low-Energy electron diffraction are presented .

  8. 能量计算表明Pd原子的皱折小于0.01nm,该结果与低能电子衍射(LEED)和扫描隧道显微镜(STM)实验结果一致。

    Our energy calculations show that the slight buckling of the Pd atom is less than 0.01 nm , which is consistent with LEED and STM observations .

  9. 运用紫外光电子能谱(UPS)和低能电子衍射(LEED)技术,对银(110)表面上有机分子(perylene)的生长进行了研究。

    The growth of perylene on Ag ( 110 ) has been studied by the ultraviolet photoemission spectroscopy ( UPS ) measurements and the low-energy electron diffraction ( LEED ) .

  10. 我们用自制的低能电子衍射(LEED)仪观察到Si(111)面的(1×1)和(7×7)结构结构以及过渡结构的LEED图样。

    The surface structures of Si ( 111 ),( 7 × 7 ) and several transition structures of Si ( 111 ) plane were observed by our home & made LEED instrument .

  11. 实验中还用低能电子衍射(LEED)观察了室温下Al在GaAs(100)(4×1)面上的淀积过程,发现随着Al淀积量的增加,表面是从无序到有序转化的。

    Low energy electron diffraction ( LEED ) is used also to study the deposition process of Al on GaAs ( 100 )( 4 × 1 ) surface . The deposited surface is disordered at the beginning and become ordered with Al deposition amount increasing .

  12. 采用背散射微扰(RSP)、重整化前向散射(RFS)等低能电子衍射(LEED)动力学计算法,计算了Cs/C(0001)-2×2表面的各种可能模型的I-V曲线。

    The I-V curves of a series of possible models of Cs / C ( 0001 )? 2 × 2 ) surface are calculated by dynamical LEED theory with RSP and RFS methods .

  13. 通过真空Ar+离子刻蚀获得理想清洁的(110)表面,采用低能电子衍射(LEED)观察了(110)面表面原子结构,观察到(110)面表面未发生重构。

    The atomic structure of the clean CZT ( 110 ) surface obtained by Ar + etching in vacuum was observed through low-energy electron diffraction ( LEED ), where no surface reconstruction was discovered .

  14. 采用低能电子衍射、扫描隧道显微镜、第一性原理密度泛函理论计算以及分子力学计算,分别对不同烷基链取代的喹吖啶酮(QA)分子在Ag(110)基底上的吸附和生长进行了研究。

    Low energy electron diffraction , scanning tunneling microscopy , first-principles density-functional theory , and molecular mechanics calculations were used to analyze the adsorption and growth of quinacridone derivatives ( QA ) with alkyl chains of 4 and 16 carbon atoms on an Ag ( 110 ) substrate .

  15. 高指数稳定硅表面的低能电子衍射图分析

    Investigation of stable high-index silicon surfaces by means of LEED pattern analysis

  16. 这两种表面超结构都可以形成8×8低能电子衍射花样。

    Both of the superstructures induce an 8 × 8 electron diffraction pattern .

  17. 外延生长过程中台阶表面的低能电子衍射强度和台阶的成形规律

    Low - Energy Electron Diffraction from Stepped Surfaces and Development of Steps during Epitaxy

  18. 用低能电子衍射研究小面结构&在Ⅲ-Ⅴ族化合物半导体表面的应用

    Facetted Structures Studied by Low Energy Electron Diffraction & Its Application to ⅲ - ⅴ Compound Semiconductors

  19. 低能电子衍射仪的研究

    Study on LEED instrument

  20. 低能电子衍射的新进展

    New developments of LEED

  21. Cs/C(0001)-(2×2)表面结构分析低能电子衍射动力学计算

    The cs / c ( 0001 ) - ( 2 × 2 ) surface structure analysis by LEED dynamical calculation