串联电阻

随着片式多层陶瓷电容器（MLCC）工作频率的提高，要求其在高频状态下必须保持较低的等效串联电阻（Res）。

As MLCC work frequency is improved , it is requested to keep low ESR at the high frequency condition .

研究表明，等效串联电阻随着有效介质层厚度的降低而降低，直流电阻随着有效介质层数的增加而降低。

It is found that ESR decreases with decrease of the active dielectric layer thickness , and DC resistance decreases with the increases of active dielectric layer number .

串联电阻、并联电阻对器件的IV特性的影响较大。

Third , Rs and Rsh have great impact on IV characteristic of device .

超高速VLSI中多晶硅发射极晶体管串联电阻的测量

Measurement of Series Resistances in Polysilicon Emitter Bipolar Transistors for High Speed VLSI

分析了串联电阻对I～V特性的影响。

Analyses of the effects of the series resistance on I ~ V characteristics of the Schottky diodes were carried out .

同时随着频率的增高，积累区栅电容也随之增加，这是由于在更高频率下，内部串联电阻对高频C一V特性的影响更加显著，因为频率越高MOS电容的阻抗越低的原因。

The reason is that the series resistance becomes more significant because of the lower impedance of the capacitor at higher frequency .

对PIN二极管的Ⅰ区厚度，串联电阻，杂质分布，面积分别进行了计算和模拟。

The thickness of I layer , series resistance , the impurity and the area are calculated and simulated respectively .

硅MIS/IL太阳电池的SiO膜与串联电阻

The evaporated SiO coating and series resistance for silicon mis / il solar cells

CdSe薄膜光电池的串联电阻研究

Study on Series Resistance of CdSe Film PEC Cell

GaAs-Ga（1-x）AlxAS双异质结激光器的热阻及串联电阻的测量

Measurements of Thermal Resistance and Series Resistance of CaAs-Ga_ ( 1-x ) Al_ x As Double Heterostructure Lasers

虽然有CD后串联电阻RD的附加直流偏移可以消除，但这种技术所增加的噪声则是固有的。

The added dc offset can be eliminated by including CD in series with RD , but the added noise is inherent with this technique .

串联电阻（Rs）和反向电流随着辐照剂量的增加而增加，这是由于电子在SiC材料中引入辐照缺陷造成的。

The on-state resistance ( Rs ) and the reverse current increased with the dose , which could be ascribed to the radiation defects in bulk material .

同时，基极串联电阻Rb将会减弱器件的抗微波损伤能力。

Moreover , the series resistance at the base resistance Rb will weaken the capability of the device to withstand microwave damage .

基于实验测试数据，综合分析了栅源、栅漏串联电阻增大后电流崩塌I-V曲线变化差异。

Based on the measurement results , I-V characteristics before and after gate-source resistance and gate-drain resistance increased were compared .

考虑源漏串联电阻时6H-SiCPMOSFET解析模型

Analytical Model Aimed at Source / Drain Series Resistance for 6H-SiC PMOSFET

陶瓷电容因其体积小、等效串联电阻小和具有较大的RMS电流而常被人们采用。

Ceramic capacitors are often chosen because of their small size , low equivalent series resistance ( ESR ) and high RMS current capability .

实验表明对于100V/100μF的液体钽电容器的电解质中加入2＃去极化剂可以在50kHz频率下获得较低的等效串联电阻（ESR）和较高的电容量C。

Our experiments show that 2 # depolarizing agent used in working electrolyte of 100 V / 100 uF wet tantalum capacitors can result in lower ESR and higher C respectively at 50 kHz frequency .

利用四探针和I／V测试仪研究了B掺杂纳米多晶Si薄膜的电阻率，给出了一个简单的多晶硅串联电阻模型用于解释多晶Si膜的电学特性。

The resistivity of boron doped polysilicon films are investigated by four probes and ⅰ / ⅴ instrument . A simple polysilicon resistance in series model is put forward to explaining the electrical properties of polysilicon films .

在温度循环下对CdS/CdTe太阳电池的性能作了研究，测定了其IV特性曲线，计算了串联电阻和并联电阻。

The performance of CdS / CdTe solar cells was studied in the temperature cycles , I-V curves of the cells were measured . The series resistances and the shunt resistances were calculated .

对电极进行的交流阻抗测试表明，电极等效串联电阻仅为200mΩ，而且经过500次循环后等效串联电阻仅增加50mΩ。

For the exchange of electrode impedance testing shows that poles equivalent series resistance is only 200m Ω, and after 500 times cycle only increase resistance 50 m Ω .

含氧化限制孔的VCSEL具有低的阈值电流，但氧化孔的存在也会加大串联电阻。

While AlAs oxide confined aperture may reduce the threshold current of vertical-cavity surface emitting lasers ( VCSELs ), it might also enlarge the series resistance of the VCSELs .

PV电池的串联电阻（rs）与电池上的金属触点电阻、电池前表面的欧姆损耗、杂志浓度和结深有关。

The series resistance ( rs ) of the PV cell may be due to the resistance of the metal contacts on the cell , ohmic losses in the front surface of the cell , impurity concentrations , or junction depth .

首先介绍了稳定FEA电子发射均匀性和可靠性的几种结构，然后提出了以离子注入和干法刻蚀技术，在常规电阻率P型衬底上制成具有串联电阻负反馈特性的单片硅FEA。

Several structures to improve the reliability and uniformity of FEA are presented . Then it was suggested that Si FEA with a series resistor feedback be fabricated on the P type substrate of common resistivity by the N ion implantation and dry etching .

AVX钽电解电容器，体积小、极性电容器，电性能稳定可靠、低ESE（等效串联电阻）值。

AVX tantalum electrolytic capacitors , small size , polarity capacitor , electrical properties of stable and reliable , low-ESE ( equivalent series resistance ) value .

SPICE模拟表明体串联电阻对体接触SOI数字D触发器速度特性有明显的影响。

The characteristics of the body contact devices show the existence of floating effect . SPICE simulation of the circuit indicates that body resistance has obvious influence on the speed of BC ( body contact ) D flip-flop circuit .

本文讨论了MIS/IL太阳电池的串联电阻与蒸发SiO膜厚度、膜中的固定正电荷密度、界面态密度之间的关系。

In this paper the series resistance for silicon MIS / IL solar cells related with the thickness of evaporated SiO coating , the fixed positive charge density in the coating and the interface state density has been indicated .

在用体接触结构设计的SOI电路中，浮体效应被压制了，但是体串联电阻的存在仍旧在远离体接触的体区产生局部浮体效应。

In SOI circuits designed with body contact structure , floating body effect is generally suppressed , but the existence of body series resistance still induces local floating effect in the part of the body away from the body contact .

在MATLAB/Simulink仿真环境下，基于光伏电池的I-V解数学函数关系式，建立了光伏电池的仿真模型，并对不同的串联电阻和日照强度变化条件下光伏电池的输出特性进行了仿真。

Based on the mathematical function formula , the simulation model of PV cells is built in MATLAB / Simulink environment . Output features of PV cells are simulated according as the different series load and the isolation .

采用正向交流特性结合I-V特性的方法，检测了激光二极管的串联电阻、理想因子、结电压和结电容与外加电压或电流的关系。

The dependence of series resistance , ideality factor , junction voltage , and capacitance on the applied voltage or current of laser diodes ( LDs ) is determined by examining forward AC behavior together with I-V characteristics .

文中给出了6种DC/DC电路的混杂系统模型，并以Buck电路的滤波电感、滤波电容及其等效串联电阻的参数辨识为例，通过实验验证了这一方法的有效性。

In this paper , the hybrid models of six kinds of DC / DC circuits are presented . The validity of this method is validated by experiments in which the inductance , capacitance and the ESR of capacitance of Buck circuits are identified .