三隧

单电子三势垒隧穿结I-V特性研究

The study of I-V characteristics of single-electron triple - barrier tunnel - junction

三势垒隧穿结构中由外加垂直磁场引入的高子带非热占据

Magnetic-field-induced Nonthermal Occupation of Higher Subbands in a Three-barrier Tunneling Structure

在正统理论的基础上，提出了单电子三势垒隧穿结模型的主方程，并用线性方程组解法求出了其稳态解。

The master equation of the single electron triple barrier tunnel junction ( TBTJ ) model is developed based on the orthodox theory .

相比之下，制冷率和相对制冷系数主要受势阱宽度变化的影响。最后，在第4章中研究了三势垒共振隧穿异质结电子制冷机的性能。

The cooling rate and the relative coefficient of performance are mainly affected by the change of the width of the potential well . Lastly , the performance of the electron refrigerator with a multi-barrier nanowire heterostructure is studied in Chapter 4 .

推导出六方晶系光子晶格中非线性三能级的Landau-Zener隧穿模型，在特殊初值条件下将其转化为非线性二能级模型。

We first derive the Nonlinear three-level Landau-Zener model in photonic lattices for the case of hexagonal symmetry , and then simplify this model to a nonlinear two-level Landau-Zener model under certain initial conditions .