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  • 网络sih公司;烁烁;西赫
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  1. Methods The clinical and imaging data of 12 patients diagnosed as SIH were retrospectively analyzed .

    方法回顾分析了12例临床诊断明确的原发性低颅压综合征病人的临床及影像资料。

  2. The Study on Structure and Potential Energy Function of the Ground State of SiH ( SiD ) Radical

    SiH(SiD)自由基的分子结构和基态势能函数的理论研究

  3. Synthesis of high molecular weight poly ( dimethyl siloxane ) containing SIH segments

    高分子量含氢聚硅氧烷的合成

  4. Anti oxidation Property of Siliconized Layer for Copper Formed in SiH 4 / H 2 Atmosphere

    铜在SiH4/H2混合气氛中获得的渗硅层的抗氧化性能

  5. Chemical Properties of SiH _4

    SiH4的化学性质

  6. The effects of the experimental parameters on OES intensity of SiH , H β and H α have been studied .

    研究了薄膜沉积过程中各实验参量对活性基团SiH,Hβ以及Hα的发射谱强度的影响。

  7. Stress-induced hypertension ( SIH ) was performed by electric shock on hind paw in rats .

    电击大鼠足底形成应激性高血压(SIH),研究了缰核(Hb)在其中的作用机制。

  8. Results The most common cause of SIH was cerebral arteriovenous malformation ( AVM 25 / 44 ) .

    结果儿童期自发性颅内出血病因以脑动静脉畸形(AVM)多见,占25/44。

  9. Conclusion : Findings of the imaging especially MR imaging is characteristic to SIH , which contribute to diagnosing SIH .

    结论:影像学特别是MRI表现具有一定的特征性,有助于帮助诊断自发性低颅压。

  10. SIH have obvious of the image change , it basic reason is the brain ridge liquid capacity de-crease and brain organization move .

    原发性低颅压有明显的影像学改变,其根本原因是脑脊液容量减少和脑组织移位。

  11. The appropriate increase in N 2 / SiH 4 ratio is beneficial to the decrease of the H content in SiN films .

    适当提高N2SiH4比例有利于薄膜中H含量的降低。

  12. Conclusion : The changes of NOS positive neurons of PAG in SIH rats may be involved in the development of SIH .

    结论:应激性高血压大鼠PAG内NOS阳性神经元的变化可能参与了应激性高血压的形成。

  13. Objective To investigate the incidence , causes , clinical characteristics , diagnosis and treatments of spontaneous intracranial hemorrhage ( SIH ) in childhood .

    目的探讨儿童期自发性颅内出血的发病率、病因、临床特点及诊断治疗。

  14. The organic thin film electroluminescence device with blue green color using new organic material , silicon alkyl derivative ( SCS SiH ), was fabricated .

    采用新合成的有机材料硅烷衍生物作为发光物质制备了发蓝、绿光的薄膜电致发光器件。

  15. During the thermal-curing process , the SiH of bonds PCS were mostly consumed and Si CH 2 Si structure was formed ;

    热交联的过程主要是消耗了PCS中的SiH键,生成SiCH2Si键,形成分子间交联;

  16. The experiments show that lower growth temperature and high SiH 4 / C 2H 4 flow ratio lead to substitutional incorporation of carbon and improvement of crystal quality .

    实验表明:较低的生长温度和较高的SiH4/C2H4流量比有利于代位式C原子的形成和材料晶体质量的提高。

  17. GDC ( He + SiH 4 ) is a routine conditioning technology developed for the vacuum wall of the HL-1M tokamak .

    GDC(He+SiH4)是为HL1M装置研制的一种常规壁处理技术。

  18. When the laser intensity reduces to a low threshold , the temperature of SiH 4 is not so high that SiH 4 cannot be splitted .

    当激光强度减小到一个低限阈值,则SiH4温度太低,不能裂解。

  19. The equilibrium geometries , harmonic frequencies and dissociation energies of the ground state of SiH ( SiD ) are calculated using several methods with different basis sets .

    采用多种方法和基组组合优化计算了SiH(SiD)自由基分子基态的平衡结构,振动频率和离解能。

  20. It is suggested that central A ⅱ is involved in SIH and Hb cardiovascular neurons of SIH show an enhanced sensitivity to A ⅱ .

    研究表明:中枢内AⅡ参与SIH的形成,SIH大鼠Hb内心血管神经元对AⅡ反应的敏感性提高了。

  21. Aim : To study the role of NO in the midbrain periaqueductal gray ( PAG ) in the development of stress induced hypertension ( SIH ) .

    目的:探讨大鼠中脑导水管周围灰质(PAG)内NO在应激性高血压(SIH)发病中的作用。

  22. Objective : To investigate cardiovascular responses to BGN injected into intracerebroventricle ( icv ) in normal and stress induced hypertension ( SIH ) rats .

    目的:观察侧脑室内注射(icv)BGN对正常和应激性高血压(stress-inducedhypertension,SIH)大鼠心血管活动的影响。

  23. Cerebrospinal fluid ( CSF ) leaks are often considered as the cause of spontaneous intracranial hypotension ( SIH ) but are not commonly demonstrated radiographically .

    自发性颅内低压一般多肇因于脑脊髓液渗漏,但影像学检查却不易发现渗漏点。

  24. Methods : Arterial blood pressure ( BP ) and heart rate ( HR ) were monitored following injection of BGN into the lateral cerebral ventricle in normal and SIH rats .

    方法:将BGN及荷包牡丹碱(Bic)注入正常和应激性高血压大鼠的侧脑室,观察血压和心率的变化。

  25. The 3C SiC film has been deposited on Si substrate via two step HFCVD method with SiH 4 + CH 4 + H 2 mixed gases as source gases .

    采用HFCVD技术,通过两步CVD生长法,以CH4+SiH4+H2混合气体为生长源气,在Si衬底上生长3C-SiC晶体薄膜。

  26. Microinjection of Glu into LHb of SIH rats decreased BP obviously in dose dependence . The decrease was also greater than that of the control group ( P < 0.05 ) .

    在SIH大鼠外侧Hb(LHb)注入不同浓度的Glu,血压明显下降,也呈浓度依赖性,下降值与正常大鼠LHb注入等量Glu引起的下降值相比,有显著性差异(P<0.05)。

  27. The faster the SiH 4 speed is , the shorter the period for the nano Si nucleus to growth , so that the nano Si particles will be small and even , too .

    SiH4的流速越快,则纳米Si成核后生长期越短,纳米Si粒也小而均匀。

  28. Silicon thin films were deposited on Al-coated glass substrates by inductively coupled plasma chemical vapor deposition ( ICP-CVD ) in SiH 4 / H 2 mixtures at a low temperature of 350 ℃ .

    利用电感耦合等离子体CVD方法在350℃的低温下在镀Al玻璃衬底上制备出具有良好结晶性的Si薄膜。

  29. The Si , SiH , H and H 2 intensities also increased with the excitation power and then trended to be saturated , and they are easier to saturate with the increase of the hydrogen dilution ratio .

    此外,随着激发功率的增大,Si,SiH峰都先迅速增大然后趋于饱和,并且随着H稀释率的增大,将更快呈现饱和现象。

  30. The photo-chemical reaction of mixture of silane ( SiH 4 ) and oxygen ( O 2 ) in vaccum ultra violet light is presented , followed by discussion on the deposition process of SiO 2 films .

    讨论了SiH4+O2混合气体在真空紫外光辐照下的光化学反应和SiO2膜的沉积过程。