HFO

Results show that HfO 2 gate dielectric hold good electrical characteristics .

实验结果显示：HfO2栅介质电容具有良好的C-V特性，较低的漏电流和较高的击穿电压。

It also obtains the best RF through experiment which has important reference value to the design of high frequency oscillate ( HFO ) .

通过实验找出了最佳射频频率。这对于TRP激光陀螺高频板的设计具有重要的参考价值。

Deposition of HfO 2 / SiO 2 antireflective and high reflective optical thin film by plasma IAD

等离子体辅助沉积HfO2/SiO2减反、高反光学薄膜

High k dielectric HfO 2 films were deposited on p type Si ( 100 ) substrates by e beam evaporation .

使用高真空电子束蒸发在p型Si（100）衬底上制备了高kHfO2薄膜。

Enantiomeric excess is determined by ~ 1H NMR spectral analysis using Eu ( hfo ) _3 as chiral shift reagent .

用加入手征性位移试剂Eu（hfc）3的~1HNMR谱测定了对映体过量百分数。

In this paper , mechanism of HfO 2 / SiO 2 multilayer high reflective coatings by pulse YAG laser conditioning has been studied .

本文研究了HfO2/SiO2多层高反膜脉冲YAG激光预处理提高抗激光损伤阈值的机理。

Assess the Lattic Stability of HfO _2

对HfO2晶体稳定性的评估

Meanwhile , the oscillatory frequency of high frequency oscillation ( HFO ) was increased , the amplitude of the phrenic nerve discharge was decreased , and the arterial blood pressure was also lowered .

此外，隔神经放电的高频振荡频率增高而电位的幅度变小，动物的血压也降低。

Ion reactive etching mechanisms of HfO 2 films in CHF 3 / Ar and SF 6 / Ar plasma were experimentally studied to promote its potential application in fabrication of new generation CMOS .

研究了HfO2薄膜在CHF3/Ar和SF6/Ar等气体中的反应离子刻蚀机理。

X-ray photoelectron spectroscopy ( XPS ) survey of the surface HfO 2 layers of the two kinds of multilayer thin films shows that they have a difference of one magnitude order in ZrO 2 content .

用X光电子能谱法分析了高反膜中表层HfO2中的成分，发现ZrO2的含量相差一个数量级左右。

It can be concluded that the content of ZrO 2 in HfO 2 will influence the reflectance of HfO 2 / SiO 2 multilayer thin film at the spectrum of 266 nm .

说明在266nm波段，HfO2中ZrO2的含量会对HfO2/SiO2高反膜的反射率造成影响。