COSI

Yesterday we went to COSI , a hands on Science Center .

昨天我们去了COSI，科技中心的一个分支。

Effects of Al substitution for Si on electronic structure and transport performance of CoSi single crystal

Al置换Si对CoSi电子结构及传输性能的影响

Observation of Cosi phase transformation in CO film

Co薄膜中CoSi化合物相转变过程观察

First-principles study of electronic structure for CoSi

CoSi电子结构第一性原理研究

Microstructure and single crystal 's thermoelectric performance of B-doped CoSi

B掺杂CoSi的微观组织和单晶热电性能

The Synthesis of Thermoelectric Compound CoSi by Mechanical Alloying

热电材料CoSi化合物的机械合金化合成

Part two presents background and plots of Cosi fan tutte , and then analyzes and compares roles in the operas .

第二部分是介绍歌剧《女人心》的创作背景及剧情，从而对剧中的人物角色进行对比分析。

While CoSi semi - metallic .

而CoSi呈现出半金属性质。

Compared with the competitive agricultural products , such as wheat and other oil crops . China 's rape has the following advantages : rapid development , lower cosi . good benefits .

与竞争作物小麦和其它油料作物比较，我国油菜的发展速度快、效益好、机会成本低，抵抗进口风险能力强，具有较强的国内竞争优势，而且这种优势在进一步强化。

The local barrier heights of the CoSi 2 / Si contacts are determined by using the ballistic electron emission microscopy ( BEEM ) and its spectroscopy ( BEES ) at low temperature .

在低温下，用弹道电子显微术（BEEM）及其谱线（BEES）测量了CoSi2/Si接触的局域肖特基势垒高度。

Microstructure study and XRD phase analysis indicate that interfacial reactions take place in the RB SiC / pure Co system , leading to the formation of CoSi , and resulting in the decreasing of the contact angle ;

微观结构研究和XRD分析表明，对于SiC/纯Co体系，界面区域发生了化学反应，生成了CoSi，减小了润湿角。

The CoSi 2 / Si Schottky contacts are measured with the current-voltage and capacitance-voltage ( I-V / C-V ) techniques within the range of temperature from 90K to room temperature .

用电流-电压和电容-电压（I-V/C-V）技术在90K到室温的温度范围内测量了CoSi2/Si肖特基接触特性。

The selectivity to tetralin over the 8.3 % CoSi / SBA-15 catalyst showed that naphthalene converted to tetralin with a low conversion of naphthalene and a selectivity of 100 % .

8.3%CoSi/SBA-15催化剂，萘的转化率较低，但四氢萘的选择性很高均为100%。

The method of augmented plane waves plus local orbitals with the generalized gradient approximation has been performed to calculate the electronic structure and electron energy loss near edge structure ( ELNES ) of Co_2Si , CoSi and CoSi_2 cobalt silicides .

本文采用扩展平面波加局域轨道方法和广义梯度近似对钴硅系中Co2Si，CoSi和CoSi2三种不同硅化物的电子结构以及电子能量损失近边结构（ELNES）进行了理论计算。