1v

A High Precision CMOS Bandgap Reference Voltage Operating at 1V

一种1V电压工作的高精度CMOS带隙基准源

A 1V MNC Bandgap Reference with High Temperature Stability

1V电源非线性补偿的高温度稳定性电压带隙基准源

A 1V operational amplifier ( OPA ) with rail-to-rail input signal swing is also applied in the reference circuit .

基准源电路中运用了rail-to-rail运算放大器（OPA）。

While the output voltage will be lower than 1V , the load is about to be more than 200A .

输出电压则会降到1V以下，输出电流高达200A。

1V and 10V Josephson Voltage Standard in NIM

我国的1V及10V约瑟夫森量子电压基准装置

The optimal medium for transplant was vermiculite : perlite ( 1v : 4v ) .

移栽试验表明，湿度是制约成活率的关键因子，适宜的移栽基质为蛭石：珍珠岩（1v：4v）。

This thesis uses self-biased structure in the loop design , then the supply voltage can be only 1V power and it eliminates reference current generating circuit .

在环路设计时，采用了自偏置结构，使得电源电压可以由单一电源1V电压提供，另外省去了参考电流产生电路。

A 1V matched nonlinear correction ( MNC ) CMOS bandgap reference with high temperature stability is presented . A Low-Power Differential CMOS Bandgap Reference

阐述了电源电压为1V的非线性补偿CMOS电压带隙基准源，该基准源具有很高的温度稳定性.一种低功耗差动CMOS带隙基准源

The proportion of 6V : 1V : 3V or 60 % peat was good for seedling quality .

草炭：蛭石：珍珠岩以6V：1V：3V比例混和较好，40d秧苗素质及成苗率较高。另外，在不同配比中，以草炭占60%处理较好。

Therefore , the optimal process of Pb-Ca alloy production is regarded as the electrolysis with lead cathode which can save about 1V electric power in electrolysis .

所以，用熔盐电解法并采用铅阴极直接生产Pb-Ca合金仅电解工序就比对掺法节省大约1V的电能。

Coordination of rare earth elements with derivatives of catechol ⅱ . study on Mechanism of colouring of coordination compounds of ce ( 1v ) with catechol derivatives

邻苯二酚衍生物与希土元素的配位反应Ⅱ.铈（Ⅳ）配合物显现颜色机理的探讨

A 1V MNC Bandgap Reference with High Temperature Stability The linear compensation bandgap reference adopted in this thesis has limited temperature stability for ignoring the influence of VBE high order items .

在基准源电路的设计过程中，论文采用一阶补偿带隙基准源结构，由于其忽略了双极型晶体管VBE电压中高阶项的影响，因此温度特性具有一定的局限性。

1V switched-opamp bandpass SC filter

1V开关电容带通滤波器的设计

Presently , the core voltage of CPU is about 1V , while the current is as high as 100A and the current transient slew rate has to reach 100A / us .

目前主流的微处理器的核心供电已经降至1V左右，需求的输出电流高达100A，且输出电流的瞬态响应要求达到100A/us。这些数据在未来的几年内将会变得更加苛刻。

If the speed is too slow , its output signal is less than 1V , then ECU will be unable to examine it ; secondly , its anti-electromagnetic interference ability is poor .

若车速过慢，其输出信号低于1V，电控单元就无法检测。

The system realizes the maximum output current is 2A , 30V ~ 36V output voltage range adjustable ( step to 1V ) Since the recovery achieved with the regulator over-current protection .

该系统实现了输出最大电流为2A，输出电压为30V～36V范围内可调（步进为1V）。用自恢复稳压管实现过流保护功能。

Under zero bias , the peak responsivity of the device is about 0.022A / W , and it increases to 0.19A/W under 1V reverse bias .

零偏下器件在280nm时的峰值响应为0·022A/W，在反向偏压为1V时，峰值响应增加到0·19A/W，接近理论值。

With 0.4 μ s CR - ( RC ) 4 shaping pulses , while their amplitudes change from 10V to 1V , the timing walking is less than Ins .

用时间常数为0.4μs的CR&（RC）~4成形脉冲，幅度从10V变到1V，定时移动小于±1ns。

The results indicate that PVC is compatible with the macromolecular binders I , ⅲ and ⅳ . of which the compatibility of 1V is the best , and almost not compatible with ⅱ .

结果表明，PVC与Ⅰ，Ⅲ，Ⅳ号悬浮液高分子粘结剂均具有一定的相容性，其中Ⅳ号最佳，而与Ⅱ号几乎不相容。

It can automatically match rotational speed generator , electromagnetic rotational speed sensor and electromagnetic turbine flowmeter . Moreover it can adapted measured signal that is 1V ~ 300V voltage and 1Hz ~ 2500Hz frequency .

能自动匹配测速发电机、电磁式测速传感器和电磁涡轮流量计，适应电压峰峰值从1伏以下至300多伏、频率从1Hz以下至2500Hz以上的被测信号。

The paper discusses the general method and procedure of doing non-lubricated remake design , following the example of the common 1V & 3 / 8 air compressor , The computation formula and method which is introduced in the paper is proper in engineering .

本文以常用的1V&3/8型压缩机为例，论述了进行无油润滑改造设计的一般方法和步骤，文中介绍的有关计算公式和计算方法在工程上是可行的。

The 1V curvature corrected bandgap reference is utilized in the A / D converters , which is followed by a level shifter and two buffers to provide the top and bottom references for the A / D converter .

应用1V曲率校正带隙基准源产生基准电压，这个基准电压经过电平移位电路和缓冲电路为A/D转换器提供高精度的顶部和底部参考电压。

This n MOSFET takes the strained Si layer ( which is deposited on the relaxed SiGe buffer layer ) as current channel and can provide a 48 5 % improvement in electron mobility while keeping the gate voltage as 1V .

该器件利用弛豫SiGe缓冲层上的应变Si层作为导电沟道，相比于体Si器件在1V栅压下电子迁移率最大可提高485%。

774 second generation mutant plants ( M 1V 2 ) were obtained from stem calli and various agronomic characters were observed . A mutant plant 91 C3 15 which is suitable for processing is selected among the 774 M 1V 2 generation plants .

从茎愈伤组织获得774株突变二代（M1V2）植株，并对各种性状进行观察，在这774株M1V2植株中选出了适合食品加工的突变株91C315。