阻值

遗传BP算法在阻值-温度变换中的应用

Study on application of BP Networks with genetic BP algorithm on resistance-temperature conversion

基于BP模型的城市配电网中性点小电阻接地系统阻值的研究

Research on Little Resistance Grounded Neutral System of City Distribution Network Based on BP Module

在600℃工作温度下，Pt微加热器具有良好的阻值稳定性和抗热冲击能力。

Working at 600 ℃, Pt micro-heater has good thermal stability and thermal shock resistance .

用Z值判别流态的临界状态摩阻值的分析

Analysis of the Critical Value of Friction Loss in Flow Pattern Determination by Using Z Value

本文用聚类分析和区间估计的方法，研究了南京区域粘性土贯入阻值Pt分布特征。

Using the methods of clustering analysis and interval estimation , this paper studies the distribution characteristics of the penetration resistance pt of cohesive soils in Nanjing region .

高阻值Cd（1-x）ZnxTe晶体的生长及其性能测试

Growth of High Resistance Cd_ ( 1-x ) Zn_xTe Crystal and Its Property Investigations

PTCR阻值的控制与调整F，对照组。

F , as control .

RuO2厚膜电阻体的阻值与TCR的关系

The Relation Between Resistance of RuO_2 Resistors and TCR

报导了针对立式2θ&θ型X射线衍射仪测量溶液结构的要求，根据热敏电阻器阻值随温度变化的特性，设计制作了液体样品池恒温装置。

Based on the characteristic change of resistivity with temperature a new simple isothermal apparatus has been designed for the measurement of the liquid structure with 2 θ - θ type x-ray diffractometer .

阻值为1Gω或者更高的电阻器常常称为高兆欧电阻器。

Resistors with values of1G.or more are often referred to as high megohm resistors .

一般情况下延长预热时间应选用阻值较低、居里点较高、体积较大的PTC热敏电阻器。

Generally speaking , to delay the preheating time , we should select the relatively lower resistance , taller Tc point and bigger PTC Thermistor .

在77K下，研究了高阻值基体材料对Bi-2223带的交流损耗的影响。

The effect of alloy matrix on AC magnetic field loss is investigated in 77K .

该方法利用双积分ADC，采用比例法测量铂电阻的阻值，并可补偿测量电路的误差。

By using dual integration ADC and ratio method the resistance of the platinum resistor is measured and the error of the measuring circuit can be compensated .

该测温模块通过采用RC充放电方式实现热敏电阻阻值的获取.避免使用A／D转换器，简化了硬件电路；

In the design , the acquisition of thermal resistor 's resistance is obtained by RC charge and discharge circuit to avoid the use of AD device and simplify the circuit design .

对制备的ITO薄膜进行了退火热处理，研究不同温度热处理后膜的方块阻值的变化。

A serial of ITO films fabricated by optimal technologies were annealed to study the variation of square resistance value of films after heat treatments on different temperatures .

发现适当控制颗粒度大小，可获得具有稳定阻值和TCR的厚膜电阻。

It is found that thick film resistor with stable resistance and TCR can be obtained by appropriately controlling the size of the conductive particle .

一种专门用于测定大阻值范围的生物体电阻的特殊电阻测试仪，采用美国ADI公司的ADμC812嵌入式单片机作为控制芯片。

A particular resistance tester is presented which specifically tests biologic resistance with a wide measure range , it applies embedded MCU AD μ C812 as the controller .

态密度结果显示费米面两侧存在较高的载流子浓度，容易导致开态漏电流，可通过掺杂Si来增加阻值。

Density of states results showed the existence of a large carrier concentration on both sides of the Fermi surface , which would induce large leakage current at ON state . Si doping can be used to increase the resistance .

当电路出现故障使回路电流增大时，过载保护PTC热敏电阻的电阻值因自热温升而出现阻值阶跃，直至把电路切断。

When the circuit breaks down and the return circuit current increases , the resistance of restricting overloading protection PTC Thermistor goes up sharply for being warm , until the circuit is cut off .

由于考虑了温度对定子电阻阻值的影响，提高了u-i模型在低速运行时磁链观测的准确度。

U-I flux linkage model can be set exactly at low speed for considering the effects of temperature to stator resistance .

基于PSPICE仿真，结合无刷直流电机提出了IGBT功率损耗的估算方法，研究了IGBT功率损耗与开关频率和栅极电阻阻值之间的关系。

In this paper . a method of estimating power loss of IGBT based on PSPICE simulation is proposed , and the relations between power loss of IGBT and switch frequency , gate resistance are presented .

利用ESPI技术测出芯片工作时的热变形离面位移场和温度场，结合热阻的定义，可算出热阻值。

Thermal deformation off-surface displacement and temperature field when chips working are measured by ESPI technique , and then thermal resistance can be calculated through combining its definition .

然后，论文从更加实际的角度出发，探讨道路阻值的设定，采用AHP层次分析法对道路阻值权重进行初步的比较设定，使影响道路畅通性的各种因素可以纳入优化模型。

Second , from a more practical point of view , it researches into how to set road resistance and sets the weights of road resistance initially by use of AHP , which brings various aspects influencing road smoothness into optimization model .

本文还指出冲击过程中的离子迁移一方面使电阻的直流U（1mA）值下降，另一方面使电阻在中、高电场下等效阻值增加，使电阻在完全破坏前能承受一定次数的冲击。

This paper also suggests that ion migration increase the resistance of the varistors in middle and high voltage , so the varistors can endure some strikes before failure .

该器件由一n沟耗尽型MOS管、一横向pnp双极晶体管和一个电阻集成而得。它具有双负阻特性和正阻区阻值易于控制等特点。

This device consists of a n-channel depletion mode MOS transistor , a lateral pnp bipolar transistor and a resistor and has the behavior of " dual negative resistance " characteristics and easily controlled resistance in positive resistance region .

研究自转方式与行星运转方式对Ni-Cr合金薄膜电阻阻值均匀性的影响。

Explore different sputtering time recasts Ni-Cr alloy film resistor . 2 . On the way and the rotation of the planets on the Ni-Cr alloy thin film resistor uniformity . 3 .

讨论了电桥灵敏度S与桥臂的阻值以及检流计内阻Rg之间的关系，并且给出了在限定条件下S的极大值。

The relationship between sensitivity of bridge and resistance of arm of bridge and inner resistance of galvanometer was studied . Under certain conditions , maximum of sensitivity of bridge was given .

实验结果表明，提高Zr/Mg比，并引入某些M2O3（M为三价金属元素）外加剂对湿阻性能有利，但低温下元件的阻值仍较高。

The results showed that by increasing the Zr / Mg ratio and also by introducing some additives such as M_2O_3 ( M-trivalent metal element ), the humidity-resistance characteristics were improved . But in the case of lower humidity , the resistance of humidity remains high .

结果表明：这种补偿硅具有热敏特性，该材料的B值为6300K左右，其阻值对温度的依赖关系与杂质的补偿程度有关。

It is shown that the compensated silicon material has thermally sensitive characteristics . The B-constant of the material is about 6300K and the resistance-temperature relationship of the material depends on the compensation degree of impurities .

采用无氧的多晶硅扩散掺杂工艺制作SCB芯片能保持电阻稳定一致，能满足阻值要求，而且这种扩散工艺导致芯片杂质浓度的梯度正好有利于SCB点火装置发火能的降低。

SCB chips by the doped process with oxygen-free silicon diffusion may keep resistance stable and consistent , and impurity concentration gradient helps to decreasing the ignition energy of SCB igniting device .