间隙原子

用扫描隧道显微镜操纵Cu亚表面自间隙原子

The manipulation of Cu subsurface interstitial atoms with scanning tunneling microscope

R（Fe，M）（12）的间隙原子效应研究

A Study of Interstitial Atom Effects in the R ( Fe , M ) 12 Compounds

间隙原子C对共格界面能的影响程度大于N，原因是C、N同置换原子的交互作用不同。

Because of the different interactions between substitutional ( N and C ) and interstitial atoms , N has a greater contribution to the interfacial energy than C atom .

钛元素的引入，消除了钢中的C、N间隙原子，抑制了珠光体组织的生成，净化了铁素体晶界，提高了铁素体组织的均匀性，使其耐腐蚀性能显著提高。

And it also can eliminate C and N interstitial atoms in steel , restrain the creation of pearlite , clean ferrite grain boundary , increase ferrite evenness and obviously increase corrosion resisting property .

XPS分析表明氧原子过剩，从而导致二氧化钛薄膜内产生金属空穴或氧间隙原子。

The XPS analysis indicated that the contents of oxygen atoms were superfluous , which resulted in the existence of vacancy metal Ti atom or interstitial atom of oxygen .

体电参数的变化是由于高温低As压条件下，发生As间隙原子的外扩散，在样品中引入V（Ga）、Ga（As）和Ga（As）V（Ga）等受主缺陷所致。

The changes of bulk electrical parameters are because the out-diffusion of As interstitial causes the generation of acceptor defects , VGa , GaAs and Ga ^ VGa under the conditions of high temperature and low As pressure .

但是未掺杂ZnO薄膜由于其本征缺陷造成的化学计量比失衡特别是氧空位（Vo）和锌间隙原子（Zni）使其成为天然的n型半导体。

However , non-doped ZnO films are natural n-type semiconductors because of their intrinsic defects of the stoichiometric proportion disbalance in oxygen vacancies ( Vo ) and Zn interstitial defects ( Zni ) .

不同先驱体膜硫化形成FeS2薄膜中存在晶格畸变、过渡相、空位、间隙原子、晶界及几何不连续等缺陷。

There are some film defects , such as crystal lattice distortions , transition phases , vacancies , interstitial atoms , grain boundaries and geometric discontinuities in the FeS_2films obtained from the sulfuration of different precursory films .

在低氧气压力下（50Pa~500Pa），紫光的发射归因于电子从价带到锌间隙原子（Zni）之间的跃迁。

The violet emission was attributed to the electron transition from the valence band to interstitial zinc ( Zn_i ) level under the conditions of low oxygen pressure ( 50Pa ~ 500Pa ) .

在高氧气压力下（5000Pa~23000Pa），锌间隙原子（Zni）和锌空位（VZn）缺陷都和紫光发射有关。

Under the conditions of high oxygen pressure ( 5000Pa ~ 23000Pa ), both interstitial zinc ( Zn_i ) and zinc Vacancy ( V_ ( Zn )) were thought to be responsible for the violet emission .

对一维模型的计算机模拟计算，表明位错应力场使得间隙原子形成具有非线性扩散特征的缺陷Fermi-Dirac分布，并增强了Snoek效应，在Snoek峰高温侧出现一个非线性扩散Snoek型内耗峰。

The simulation computation shows that the nonlinear diffusion of interstitials induced by the dislocation stress field makes the interstitials form a Fermi-Dirac distrubution of defects and enhances Snoek effect , hence , a peak of Snoek effect of nonlinear diffusion appears at higher temperature than that of Snoek peak .

稀土&铁金属间永磁化合物间隙原子效应的研究

Interstitial Effect Studies on Rare-Earth Iron Permanent Magnetic Compounds

间隙原子在晶体中扩散的新的理论分析方法

A new theoretical analysis method for diffusion of interstitial atom in crystal materials

在离子固体中的阳离子-空位对和阳离子-间隙原子对。

In an ionic solid , a cation – vacancy and cation – interstitial pair .

在陶瓷化合物中，与空位、间隙原子的类型和偏聚有关的缺陷组态。

Relating to the kinds and concentrations of vacancies and interstitials in a ceramic compound .

氮原子以间隙原子的形式进入纳米形态的α－Fe的晶格中，并引起了相应的晶格形变。

Nitrogen atoms enter nanostructure α Fe crystal lattice , and lead to corresponding crystal deformation .

结果表明：粒子注入金刚石后产生的空位比间隙原子更靠近晶体的近表层分布；

The results show that the distribution of most of vacancies is nearer to the surface than the interstitials .

Ge/Si（113）-（2×2）表面：自间隙原子引起的结构特征

Ge / Si ( 113 ) - ( 2 × 2 ) surfaces : Structural features induced by self-interstitial atoms

较为重要的研究成果有：提出在晶体中间隙原子扩散的理论模型；

Some valuable research results are : A theoretical model on diffusion of interstitial atoms in crystal was put forward .

本文提出间隙原子在晶体材料中扩散的微观过程的新的理论分析方法。

In this paper , a new theoretical analysis method for diffusion of interstitial atom in crystal materials has been presented .

本文评述了稀土永磁材料发展过程中，氢作为一种间隙原子在永磁材料的制备工艺上的应用；

Researchs and applications of hydrogen as a kind of interstitial atom in the manufacturing process of rare earth-iron based permanent materials are reviewed .

结果表明，以前的空位扩散机制、单级联间隙原子扩散机制和热峰模型都不能解释Mo/Si体系的离子束混合。

These results show that the ion beam mixing mechanism of Mo / Si system is not vacancy diffusion and intra-cascade interstitial diffusion , and the thermal spike model also does not apply .

置换原子对界面能的贡献随温度的上升而增加，而间隙原子的贡献与之相反，两者综合的结果是共格界面能随温度上升而增加。

And the total interfacial energy increases with the increase of temperature , in which the contribution from N or C atom has a negative influencing , compared with that from the substitutional atoms .

本文提出了半导体中过渡元素杂质的一个简单模型，用格林函数方法计算了硅中替代和间隙原子产生的杂质能级和波函数。

A simple model about transition impurities in semiconductors is proposed , and the impurity energy levels and wave functions produced by substitutional and interstitial atoms in silicon are calculated by Green 's function method .

这种本征受主缺陷的产生是由于热处理过程中样品内发生了As间隙原子的外扩散。提高热处理过程中的As气压可以抑制这种本征受主缺陷的产生。

The generation of this intrinsic acceptor defect is due to the occurrence of the out diffusion of As interstitials during the high temperature process , which can be suppressed by increasing the As gas pressure during annealing .

在氧化物的晶格中掺入外来元素会产生空位、间隙原子、置换原子和位错等晶格缺陷，而这些缺陷的产生可以在一定程度上促进母体氧化物的物理和化学性能。

Doping other ion into oxide matrix , could cause lattice defects such as vacancies , interstitials and antisites , which play an important role in modifying the physical and chemical properties of mother oxide at a certain extent .

结果表明，当处在不同滑移面上的两个位错相交后，有可能产生1/3空位或1/3间隙原子，它们是晶体中的最小点缺陷，可作为相交位错的节点而单独存在。

The results show that after the intersection of dislocations located on different slip planes , one-third vacancy or one-third interstitial can be generated , which is the smallest point defect in the crystal instead of unit vacancy or interstitial .

计算得到中性K空位的形成能为6.5eV，远小于间隙K原子点缺陷形成能13.07eV。

The formation energy of K vacancy was calculated to be about 6.5 eV and much lower than that of K interstitial ( 13.07 eV ) .

主要有如下一些结论：a）MS计算结果表明间隙He原子（HeI）在α-Fe和γ-Fe中均以四面体间隙位最稳定。

Main conclusions are described as following : a ) The MS calculation results indicate that the tetrahedral interstitial position in γ - Fe or α - Fe is the most stable site for interstitial helium atom ( HeI ) .

无氧化膜的空洞，在高温下发出一个个空位，同时八面体空洞周围的自间隙硅原子不断的从空洞的边缘迁移至空洞的底部，使空洞逐渐变浅直至最后消失。

The void without oxide shrinked by emitting vacances and the migration of silicon atoms from edge to the bottom of void .