锑化铟

锑化铟红外焦平面探测器将要在寿命周期中于室温到77K的温度范围内工作几千次。

An InSb infrared focal plane array ( IRFPA ) detector is required to operate in the temperature range from room temperature to77K for several thousand times in its lifetime period .

利用高能反射电子衍射技术（RHEED），研究了硅、锑化铟、碲镉汞样品逐次化学腐蚀后的切割表面损伤。

Surface damage caused by cutting on Si , InSb , HgCdTe has been studied by Reflection High Energy Electron Diffraction ( RHEED ) after step-etching the samples .

p型锑化铟中的噪声

The noise of the p - type indium antimonide

N型锑化铟的电导率，霍尔效应和横向磁阻效应

Conductivity Hall effect and transverse magnetoresistance effect of N type indium antimonide

锗、硅、锑化铟和砷化镓的热膨涨&用X射线衍射法测量

X-ray measurement of the thermal expansion of germanium , silicon , indium antimonide and gallium arsenide

锑化铟（InSb）中自旋反转受激喇曼散射

Spin - Flip Stimulated Raman Scattering in InSb

红外辐照度测量仪采用红外锑化铟（InSb）探测器来实现。

Infrared radiation measuring instrument uses infrared indium antimonide ( InSb ) detector to achieve the measurement .

锑化铟光伏器件一般工作在77K。

In general , the working temperature of InSb photovoltaic devices is at 77K .

本文简单叙述了锑化铟（InSb）电荷注入（CID）探测列阵的基本原理和工艺条件，并给出了实验结果。

The basic principles of InSb CID detector array and technical con - dition are briefly described . Experiment results are given .

本文最新研制了一种用锑化铟-铟（InSb-In）共晶体薄膜磁阻制成的准全方位振动传感器。

A relatively omnidirectional vibration sensor made of InSb-In eutectic film magnetoresistance is introduced .

讨论了锑化铟（InSb）磁敏电阻的工作原理、设计与制备工艺，并介绍了InSb磁敏电阻作为一种非接触敏感器件的典型应用。

Operating principle , design and preparation of the magnetoresistors of InSb crystal were discussed . Some typical uses of the device as non-contact sensors are presented .

锑化铟p-on-n光伏器件的离子注入设计

Design of ion Implantation of InSb p-on-n Photovoltaic Devices

最后，本论文设计了一种基于锑化铟（InSb）材料工作在太赫兹波段的支持单向边界模式的旋电光子晶体结构，并分析了这种太赫兹单向边界模的传输特性。

Finally , this paper also presents a design of gyroelectric PhC structure with indium antimonide ( InSb ) dielectric which supports one-way edge mode operating at terahertz frequencies , and the characteristics of terahertz one-way edge mode are carefully analyzed .

连续波氧碘激光对光伏型锑化铟探测器的破坏阈值

Damage threshold of CW coil to insb ( pv ) detector

激光辐照光伏型锑化铟探测器的损伤机制研究

Damage Mechanism of InSb Detectors ( PV ) when Laser Irradiated

用电子束感生电压技术检测锑化铟红外探测器

Characterization of InSb infrared photodiodes by electron beam induced voltage technique

室温锑化铟在探测器阵列靶中应用问题研究

Study on the Application of InSb IR Detector in Detectors Array Target

化学腐蚀对锑化铟表面的影响

Effect of chemical etch on the surface of indium antimonide

砷化镓、锑化铟中痕量碲的无火焰原子吸收分光光度法测定

Determination of Trace Tellurium in GaAs and InSb by Flameless Atomic Absorption Spectrometry

锑化铟磁阻型红外光电传感器及其特性研究

InSb Magnetoresistance IR-Photoelectric Sensor and It 's Characteristic Research

锑化铟磁阻传感器特性测量及应用研究

Characteristics and applications of the InSb magnetic resistance sensor

可用于低转速测量的锑化铟齿轮转速传感器设计

Circuit Design of low-frequency InSb Gear Velocity Sensor

优质锑化铟晶体和探测器组件

High Quality InSb Crystal and IR Detector Module

锑化铟光伏探测器的热噪声限工作

Johnson noise limited operation of photovoltaic InSb detectors

锑化铟焦平面阵列的性能预测

Predicted performance of indium antimonide focal plane arrays

应用感应耦合等离子体技术首次实现了对锑化铟薄膜的干法刻蚀。

Inductively coupled plasma was first used to dry etch of InSb thin film .

锑化铟单晶中α位错的运动速度

Velocity of Motion of a-Dislocations in Indium Antimonide

锑化铟光伏器件温度特性分析

Analysis of temperature characters-tics of InSb photovoltaic devices

磁阻效应增强型锑化铟红外光电传感器

A Indium Antimonide IR-photoelectric Sensor Enhanced by Magnetoresistance

从高杂质含铟物料中回收铟的综合条件试验与应用光优型锑化铟红外探测器

Comprehensive-factor Experiment and Application of Recovery of Indium from the High Impurity Indium-Containing Material