锑化物

锑化物激光器、探测器MBE生长与物理研究

Study on MBE Growth and Physics of Antimonide Laser and Detector Materials

中红外波段锑化物激光器、探测器器件与物理研究

Investigation of Devices and Physics for Antimonide Lasers and Photodiodes in Mid-infrared

GaAs基AlGaAsSb/InGaAsSb锑化物激光器材料和器件的研究

Research on Sb Laser Material and Device for AlGaAsSb / InGaAsSb on GaAs Substrate

锑化物半导体材料的MOCVD生长研究及其热光伏器件的模拟分析

MOCVD Growth of Antimonide Semiconductors and Simulation of Antimonide-based Thermophotovoltaic Devices

锑化物激光器、探测器的刻蚀工艺以及电化学C-V技术研究

Study on Etching of Antimonides Materials and Electrochemical C-V Technique

GaSb基锑化物量子阱激光器材料的研究

GaSb Based Quantum Well Laser Materials

研究了GaSb材料的腐蚀机理并改进了腐蚀工艺，针对锑化物材料体系的特点，首次发展了中性（NH4）2S钝化溶液，比传统的碱性溶液取得了更好的钝化效果。

The chemical etch of GaSb based materials has been studied and the etching process have been optimized . A new modified neutralized ( NH4 ) 2S solution for antimonide have been proposed , the better passivation effect was obtained than traditional alkali solution .

分析了铁化物/锑化物的阻燃消烟作用。

The fire retardation and smoke suppression effect of ion compounds / antimony compounds was analyzed .

本论文利用锑化物材料制备了2μmInGaAssb/AlGaAsSb双极级联激光器，结合隧道结的光学、电学等特性的分析。

In the thesis we have antimonide materials prepared 2 μ m InGaAsSb / AlGaAsSb bipolar cascade laser , combined with the tunnel junction optical , electrical and other characteristics of the analysis .

此博士学位论文主要利用数值分析方法对2μm波段锑化物多量子阱激光器和中红外量子级联激光器的热特性进行了深入的分析。

From this point of view , in this Ph.D dissertation , the thermal behaviors of 2 μ m band antimonide MQW lasers and mid-infrared quantum cascade lasers are studied by using numerical approach .

获得红外光的方式有多种，而目前研究最为热门的是以锑化物做半导体激光器发光有源区的方式。

There are several ways to obtain infrared light . Antimonide semiconductor laser emit mid-infrared spectrum . The most popular way to get the mid-infrared light is using antimonide as emitting active region , at present .