载流子浓度

GaP：N绿色LEDN2层载流子浓度的优化

Optimization of the Carrier Concentration in the n_2 Layer of GaP : N LED

重掺杂P型Si（1-x）Gex层中少数载流子浓度的低温特性

Low Temperature Characteristics of Minority Carrier Concentration in Heavily Doped p SiGe Layers

霍尔测试表明：随着Al组分的提高，薄膜的迁移率和载流子浓度都有所提高。

Hall Effect measurements show the carrier mobilities increase as Al content increasing .

Matlab在计算半导体费米能级和载流子浓度中的应用

A Method for Calculating Fermi Energy and Carrier Concentrations in Semiconductors with Matlab

ZnSe：Cl，N单晶薄膜中载流子浓度的电学法测量和光学法确认

Examination and Confirmation of the Carrier Concentration in ZnSe : Cl , N Crystal Films by Electrical and Optical Methods

最后，对混合掺杂n型和p型半导体的载流子浓度随温度的变化规律进行了简单的讨论。

In the end , we discuss simply about the varied patterns of concentration and temperature of free carriers in co-doped semiconductors .

GaP∶NLPE片的纵向载流子浓度分布

Carrier Concentration Profiles of GaP ∶ N LPE Wafers

丝状发光的GaAs注入式半导体激光器中结电流密度与载流子浓度的分布

Profiles of junction current and carrier-concen-tration in GaAs injection lasers with filament

其本身的氧化还原过程和非化学计量是其氧敏性的根源，在氧过剩的La2NiO4+ā系统中载流子浓度与氧分压的1/6次方成正比。

Its oxygen-sensitivity is related to its oxidation and reduction process and non-stoichiometric ratio .

As掺杂P型材料的少子寿命与同载流子浓度Hg空位为主的P型材料少子寿命相比，大了一个数量级。

For the same concentration , the minority carrier lifetime of P-type As-doped HgCdTe is one magnitude larger than the Hg-vacancy .

GaN压电效应对载流子浓度的影响

Influence of Piezoeffect on Carrier Concentration in Gallium Nitride Epilayer

GaN载流子浓度和迁移率的光谱研究

Optical spectroscopy study on carrier concentration and mobility in GaN

应变Si（1－x）Gex层本征载流子浓度和有效态密度的温度特性分析

Temperatures characteristics of intrinsic carrier concentration , effective densities of states in strained si_ ( 1-x ) ge_x layers

观察了硼和磷离子注入Si中的载流子浓度剖面分布和异常增强扩散。

The carrier concentration profiles and the anomalous enhanced diffusion in Si implanted with boron and phosphorus ions are observed .

通过霍尔测试，获得了SiC材料的导电类型、电阻率、载流子浓度和迁移率。

Electric conduction type , resistivity , carrier concentration and mobility were obtained from the Hall effect measurement .

偏压对溅射ITO膜载流子浓度和迁移率的影响

Effect of Bias Voltage on Carrier Concentration and Hall Mobility in ITO Films

非抛物型能带半导体Hg（1-x）CdxTe的本征载流子浓度

Intrinsic carrier concentration in hg_ ( 1-x ) cd_xte semiconductors with nonparabolic band

钙钍掺杂YBCO超导体中的载流子浓度

Carrier Density in YBCO Superconductors Doped by Ca and Th

本文从晶体生长机理、n型半导体能带理论、迁移率和载流子浓度等因素来解释上述结构。

These phenomena have been discussed based on the mechanism of crystal growth , theory of n-type semiconductor 's energy band , carrier concentration and mobility in this paper .

这主要是因为Li掺入后会较大地改变ZnO的载流子浓度，而ZnO基DMS的铁磁性可能来源于载流子媒介的交换作用。

ZnO-based DMS ferromagnetism may originate from the carrier mediated exchange interaction and the carrier concentration of ZnO might change when Li doped .

采用C-V法测量Si/GaP（Ⅲ）异质结的表观载流子浓度分布n（x），从中导出了异质界面的导带失配值和界面电荷密度。

The conduction band offset and the interface charge density are derived from the apparent carrier concentration distribution obtained by the C-V profiling techniqe .

电化学C-V法测量半导体材料载流子浓度分布

Electrochemical C-V Method for Determination of Semiconductor Impurity Profile

透明导电IMO薄膜的载流子浓度测量

Measurement of Carrier Concentration of Transparent Conductive IMO Films

然而，p型GaN的载流子浓度偏低，电阻偏大一直是GaN材料在制备大功率LED和LD方面应用的瓶颈之一。

However , the low carrier concentration and large resistance of p type GaN are the bottleneck of GaN in fabricating high power LED and LD .

本文对用C-V法提取SiC隐埋沟道MOSFET沟道载流子浓度的方法进行了理论和实验分析。

A theoretical and experimental study on extracting channel carrier concentration for 4H-SiC buried channel MOSFET has been carried out .

讨论了不同Er离子注入量对硅基底上沉积的CdTe薄膜结构和光电性能的影响，并具体给出了掺杂CdTe多晶薄膜的电导、载流子浓度及迁移率等参数值。

Here the conductance , carrier concentration and hall mobility ect parameters of Er doped CdTe films have been given .

由于InN纳米线中高的自由载流子浓度，而导致材料表现出金属导电行为。

Due to the high carrier concentration , a single InN nanowire exhibits electrical transport property characteristic of metals .

对得到的仿真结果，论文结合已有的PIN限幅器理论模型，通过分析限幅器核心器件&PIN管I区载流子浓度的变化，进行了理论分析。

The result is clarified through analysis on the variation of the PIN diode 's carrier density in I-region , combined with the existed theoretical model .

MBE生长的InSb和InAsxSb（1-x）的载流子浓度剖面分布

Carrier Concentration Profiles of InSb and InAs_xSb_ ( 1-x ) Grown by MBE

AlGaN/GaN/铁电双异质结构可在GaN内形成双沟道，载流子浓度提高2倍以上。

There are dual channels in GaN layer of AlGaN / GaN / FE heterostructure so that carrier density improves more than twice .