晶界

jīng jiè
  • grain boundary;crystal boundary
晶界晶界
晶界[jīng jiè]
  1. 晶界处聚集的O,S,C等杂质元素引起脆性断裂;

    Some impurity elements gathered at crystal boundary , such as O , S , C , cause brittle fracture .

  2. 稀土氧化物在Al2O3透明陶瓷晶界浓度分布的非平衡态热力学分析

    Non_equilibrium thermodynamic analysis of the concentration distribution of rare earth oxide at alumina transparent ceramic crystal boundary

  3. P,N影响Fe晶界结合的第一原理研究

    First Principle Research on Effect of P , N Impurities on Fe Grain Boundary Cohesion

  4. 在晶界的腐蚀产物中含有Fe和Si;

    Fe , Si were measured in grain boundary corrosion product .

  5. 可细化晶粒,抑制Si元素在晶界的偏析;

    Grains are refined and boundary segregation of Si element is suppressed .

  6. 低合金钢中Cr对磷在晶界偏聚的影响

    Effect of Cr on P grain boundary segregation in low alloyed steels

  7. 沿晶界和枝晶间分布的α(Al)-CuAl2共晶均匀化;

    Improves the morphology and distribution of α( Al ) CuAl_2 eutectic along grain boundaries ;

  8. 微裂纹常在基体晶界和SiC颗粒界面处形成。

    Microcracks often initiate on the grain boundaries and the interfaces .

  9. ZnO压敏陶瓷晶界势垒高度和宽度的研究

    Research of Barrier Height and Width in ZnO Varistor Ceramics

  10. La偏聚在晶界呈根块状分布。

    La segregates on the crystal grain boundary with root tuber form .

  11. 在较低的测试温度范围内,升高温度引起纳米GaP材料发生晶界结构弛豫;

    In lower measuring temperature range , increase of temperature led to occurrence of grain boundary relaxation of GaP nanocrystals .

  12. 晶界Bi偏聚对<110>取向Cu三晶断裂行为的影响

    Influence of Bi segregation on the fracture behavior in < 110 > tilt Cu TRICRYSTAL

  13. Sb2O3掺杂对ZnO压敏陶瓷晶界特性和电性能的影响

    Effect of sb_2o_3 doping content on grain-boundary characteristics and electrical properties of ZnO Varistors

  14. Nb双晶中晶界腐蚀与位向差的关系

    Correlation between grain boundary corrosion and misorientation in NB BICRYSTALS

  15. 稀土Ce对2090铝锂合金晶界内耗的影响

    Effects of Rare Earth Element Cerium on Grain Boundary Internal Friction of 2090 Aluminium Lithium Alloy

  16. 应力与PTC效应;晶界结构与PTC效应;

    Stress and PTC effect , grain boundary structure and PTC effect ;

  17. 确定了合金组织中TiNi基体相、Nb相及在晶界形成的氧化物和碳化物的形变特点。

    The deformation characteristics of the Ni-Ti matrix , Nb-rich phase , and oxides and carbides were determined .

  18. 纳米粉体对TiO2压敏陶瓷晶界势垒结构的影响

    Influence of Nano-Particle on Grain Boundary Barrier Structure of TiO_2 Varistor Ceramics

  19. 这说明硅原子不能存在于TiN晶粒内部,而只能存在于晶界中。

    That saw silicon atoms can not exist within the TiN grains , which can only exist in the boundary .

  20. TEM观测表明,晶界相少,且大部分都缩至三角晶界,AIN晶粒与晶粒接触紧密。

    TEM shows that AIN phase is continuous , boundary phase is little and contracted in triangle grain boundary .

  21. 高压高温处理对YNi2B2C晶界效应的影响

    Effect of the treatment under high-temperature and high-pressure on yni_2b_2c grain boundary

  22. 晶界相预合成对Si3O4陶瓷显微结构和高温力学性能的影响

    Effect of Pre-Synthetic Grain-Boundary Phase on Microstructure and High Temperature Mechanical Properties of Si_3N_4 Ceramics

  23. 利用失效分析的方法,分析了2号乙烯柴油裂解炉炉管开裂的原因,结果表明:炉管开裂的原因是由于管材成分中Nb含量偏低、易引起渗碳,使碳化物沿晶界大量析出;

    The causes of cracking of No. 2 ethylene cracker tubes are analyzed by failure analysis method .

  24. SEM断口分析表明,晶界上产生的粘性物质对粗晶超塑性行为有决定性影响。

    Analysis of the SEM fracture surface shows that amorphous matter at the grain boundary plays a dominant role in coarse-grained superplastic behaviors .

  25. 同时,探讨了Ag在合金沉淀强化中的作用与晶界特性机理。

    The function in precipitation strength and the boundary cha & raeterstic are also studied with Ag added in the alloy .

  26. Si3N4-Al2O3复相陶瓷的抗热震性与晶界脆化

    Intergranular Embrittlement and Thermal Shock Resistance of Si_3N_4-A1_2O_3 Multiphase Ceramics

  27. 分析了ZnO晶粒半导特性、ZnO压敏电阻晶界能带结构及晶界能带导电的机理。

    Semi conducting properties of ZnO varistor , structure of its energy band and conductive mechanism of grain bounder energy band were analyzed .

  28. 通过X衍射和扫描电镜分析发现,Bi呈薄膜和颗粒状存在于α相的晶界以及α和β的相界上;

    Film-like or particle Bi exists in boundary of α phase and on phase interface of α and β phases by XRD and SEM observation .

  29. 这种现象用晶界滑移存在门槛应力这一模型得到满意的解释,并得到真实应力指数、活化能和晶粒指数分别为2406kJ/mol和3.3,它们不随应力而变化。

    This phenomenon can be satisfactorily explained with the model of grain boundary sliding with a threshold stress .

  30. 但是过量的Cr会偏聚在晶界处,甚至形成一层氧化物层,降低样品的电绝缘性能,使得介质损耗增加。

    While more Cr3 + results in the formation of an oxide layer which lowers the insulating property and increases the loss of the specimens as well .