晶体缺陷

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  • crystal defect
晶体缺陷晶体缺陷
  1. TEM立体影像显微术属于较简单的三维立体成像术,可分析简单的晶体缺陷结构,如差排、叠差,和一些具有特定晶面的析出物等。

    TEM stereo microscopy can resolve simple crystal defect structure such as dislocations , stacking faults , and some precipitates with defined crystal planes ;

  2. 砷化镓晶体缺陷显示的可靠性分析

    Reliability Analysis of Revealing GaAs Crystal Defect

  3. 辽宁天然金刚石晶体缺陷的X射线形貌研究

    X-ray topographic study of crystal defects in natural diamonds from Liaoning

  4. 人造金刚石晶体缺陷的同步辐射X射线衍射形貌像浅析

    Study on Crystal Defects in Synthetic Diamond with Synchrotron Radiation X-ray Diffraction Topography

  5. Cr∶KTiOPO4晶体缺陷的研究

    Investigation on Defects of Cr ∶ KTiOPO_4 Crystal

  6. 本文利用透射X射线衍射形貌术研究辽宁天然金刚石晶体缺陷的问题。

    This paper is concerned with crystal defects in natural diamonds from Liaoning using transmission X-ray topography .

  7. HB掺In-GaAs晶体缺陷的X射线形貌研究

    X-Ray Topography on Crystal Defects in HB In-Doped GaAs

  8. La2Ti2O7晶体缺陷的阴极射线致发光形貌术的研究

    Study on Defects In La_2Ti_2O_7 Crystals by Cathodoluminescence Topography

  9. 用正电子湮没研究β-BaB2O4晶体缺陷

    Study on Defects of β - BaB_2O_4 Single Crystal by Positron Annihilation Technique

  10. 纳米V2O5的晶体缺陷与导电性能研究

    Defect and Electrical Properties of Nanocrystalline V_2O_5

  11. 多节状SiC晶须的VS生长机理及晶体缺陷分析

    VS Growth Mechanism of Multi node SiC Whiskers and Analysis of the Crystal Defects

  12. 快速生长的TGS晶体缺陷的X射线形貌术研究

    X-Ray Diffraction Topography Study of Defects in Rapid Grown TGS Crystals

  13. Cd掺杂扩散诱发InSb晶体缺陷的X光研究

    X-ray Study on the Defects Induced by Cd-doped InSb

  14. 化学气相沉积(CVD)金刚石的主要晶体缺陷为孪晶、层错和位错。

    Crystal defects of CVD diamond films are mostly twins , stacking-faults and dislocations .

  15. 利用同步辐射X射线对人造金刚石晶体缺陷进行了形貌学研究,实验采用了透射(劳埃)形貌术和反射形貌术两种方法。

    Crystal defects in a synthetic diamond were studied by synchrotron radiation X-ray diffraction topography , including projection ( Laue ) and surface reflection topographies .

  16. 用化学气相沉积(CVD)法制备硫化锌(ZnS)体块材料中晶体缺陷和生长工艺的研究

    Study on Growth Technology and Crystal Defects in ZnS Bulk Crystal Prepared by CVD Method

  17. 首次报道了利用光学显微法和同步辐射白光X射线形貌术对Cr∶KTP晶体缺陷的研究结果。

    The defects of Cr ∶ KTP crystals have been studied by optical micrography and white beam synchrotron radiation topography .

  18. 由于V4C3沿奥氏体的晶体缺陷析出,故这些缺陷将遗传至马氏体中。

    Because the V_4C_3 precipitated along the crystalline defects in austenite , they could be inherited to martensite .

  19. HMX的晶体缺陷和酸值的关系

    Relationships between the Defect Lattice and the Acidity of HMX Crystals

  20. 用正电子湮没研究NiAl中的晶体缺陷

    Study of the lattice defects in NiAl by positron annihilation

  21. KDP晶体缺陷的观测

    Observations on Defects of KDP Crystals

  22. 当纳米晶中有螺型位错等晶体缺陷形成时,会为Si原子的“落座”提供生长所需的台阶源,晶粒将以螺旋状生长方式长大。

    When the helix dislocation formed in nano-crystal , step resources required for Si atoms ' growth can be supplied and crystal grains grow up by the way of helix .

  23. BPO4晶体缺陷的形貌分析

    Topography Analysis of Defects in BPO_4 Crystal

  24. 并通过介绍在北京同步辐射装置上所做的若干实验成果,扼要叙述了同步辐射X射线形貌术在晶体缺陷研究和晶体生长中的应用。

    The applications of the synchrotron radiation X ray topography on the studies of defects and growth of crystals are briefly presented by means of some experimental results carried out at Beijing Synchrotron Radiation Facility .

  25. 稀土渗入钢基体和VC渗层,会增大晶体缺陷密度,使碳原子扩散易于进行。

    Permeating of rare earths into steel and the VC layer increase the crystal fault density , and , together with its excellent chemical activation , makes carbon atoms diffuse easily .

  26. HMX中晶体缺陷的获得及其对热感度和热安定性的影响

    The Preparation of HMX Crystals with Defects and the Influences of Crystal Defects on Thermal Sensitivity and Stability

  27. 利用XRD、SEM、TEM及HRTEM等分析手段研究分析了涂层的结构、微观组织,以及涂层内的晶体缺陷。

    XRD , SEM , TEM and HRTEM were applied to analyze the phase composition and microstructure , as well as crystal defects in the RPS TiN coating .

  28. YVO4晶体缺陷分析

    Study on Defects of YVO_4 Crystal

  29. RTCM算法在一维光子晶体缺陷模中的应用

    Applications in Defect Mode of One-dimensional Photonic Crystal with RTCM Arithmetic

  30. 提出一种SnO2:F晶体缺陷结构模型,可以较好解释电导随F掺杂浓度的变化结果。

    We have put forward a structural motel of defects in Sn02 : F crystal which can fine explain changes of conductance with the concentration of fluorine dopant .