饱和电流

根据肖特基势垒的反向IV曲线，计算了势垒的反向饱和电流密度和平均理想因子。

We have calculated the saturation current density and ideality factor of the Schottky barrier with reverse characteristics .

该技术充分利用了PN结反向饱和电流是温度敏感函数的特性，使用简单的电路结构，达到了很好的温度特性和电源抑制性能。

The sensitive temperature characteristics of PN junction inverse saturation current is fully utilized to obtain good temperature coefficient and PSRR with simple circuit structure .

水泥基pn结有良好的单向导电性，并且随时间的增加反向饱和电流越小。

Experiments show that the cement-based pn-junctions have a good unilateral conductivity .

pn结太阳电池饱和电流密度的理论研究

A Study of Saturated Current Density of Solar Cells with pn Junction

对XRD的电路进行了分析，计算出XRD的时间响应和线性饱和电流。

The equivalent circuit of XRD was analyzed , and its response time and linear saturated current were calculated .

文章也分析了TCO膜的热电子发射对电池饱和电流的影响。

The effect of thermal emission of TCO on cells performance is also analysed .

V（oc）的下降是由于并联电阻R（sh）的减小或暗饱和电流Is的增加造成。

The decrease of Voc results from the decrease of parallel resistance ( R_ ( sh )) or the increase of dark saturation current ( I_S ) .

实验结果还表明，ITO／PTCDA／P-Si／Al同型异质结的暗电流主要成分是耗尽区中载流子的产生一复合电流结的反向饱和电流。

The result of the study shows that the main ingredient of the dark-current is generation-recombination current in depletion region .

管芯功率达到440mW以上，饱和电流3A以上，峰值波长1430nm，远场发散角为40°×14°。

The output power above 440 mW and the saturation current above 3 A have been achieved . The measured far-field divergence angle is 40 °× 14 ° .

先对其进行理论上的计算分析，得到亚阈值电流，阈值电压，饱和电流等随温度的变化关系，并用Medici模拟仿真进行验证。

Its first theoretical calculation and analysis , sub-threshold current , threshold voltage , saturation current variation with temperature , and the Medici simulation verification .

本文采用射极跟随器、电流镜、非饱和电流开关等高速单元电路设计了一种新颖的BJT模拟开关。

A new design of BJT analog switch using high speed unit such as emitter follower , current mirror and unsaturated current switch is presented .

采用抬高源漏结构的NMOS和PMOS，其饱和电流分别提高了36%和41%。

As a result , the NMOS and PMOS with elevated source / drain structure increase the saturation current by 36 % and 41 % , respectively .

该模型不但与阈值电压、沟道饱和电流等器件参数相关而且充分反映了剩余极化、矫顽电压等铁电栅介质极化特性对器件ID-VG特性的影响。

The model comprises the main parameters such as threshold voltage and the ferroelectric polarization properties .

与传统的MESFET器件相比，AlGaN/GaNHFETs具有高跨导、高饱和电流以及高截止频率的优良特性。

Comparing with the traditional MESFET transistors , AlGaN / GaN HFETs own the outstanding performances of high transconductance , high output current density and high cutoff frequency .

AlGaN/GaN高电子迁移率晶体管（HEMTs）就是基于AlGaN/GaN异质结材料制造的GaN基器件，该类器件在高跨导、大饱和电流以及高截止频率方面有着很出色的表现。

AlGaN / GaN high electron mobility transistor ( HEMTs ) is a kind of GaN device based on the AlGaN / GaN heterojunction , and they own the outstanding performances of high transconductance , high output saturation current and high cutoff frequency .

采用抬高源漏结构的1.2μmnMOSFETs的饱和电流提高了32%，pMOSFETs的饱和电流提高了24%。

The saturation current of 1.2 μ m nMOSFETs is increased by 32 % with elevated source / drain structure , and that of 1.2 μ m pMOSFETs is increased by 24 % .

易饱和电流互感器在母线保护测试中的应用

Application of the saturable CT in the test of busbar protection

结果表明，该三极管驱动电压低，呈不饱和电流-电压特性。

Experimented results show that the transistor has low driving voltage and no-saturated current-voltage characteristics .

梯度掺杂电场使饱和电流在原来扩散项外，增加了漂移项。漂移项和扩散项的方向相反，减小了饱和电流。

The saturation current is decreased due to diffuse term value of uneven-doped electric field .

研究表明，共栅共源器件的第二栅压对的器件饱和电流与跨导有明显的调制作用，容易实现功率增益控制。

The second gate bias will remarkably affected saturation current and transconductance and realize power gain control .

需要提取的参数包括：反向饱和电流，二极管的理想因子，串联电阻和并联电阻。

Extract parameters including : reverse saturated current , diode ideal factor , series resistance and parallel resistance .

它们之间的差别，可以用不同的“饱和电流”与不同的“理想因子”来表示。

The differences between them can be represented by various " saturatlon currents " and " ideality factors " .

实验表明，共栅器件的第二栅压会显著影响器件饱和电流与跨导特性，从而控制功率增益。

The second gate bias will not only remarkably affect saturated current and transconductance , but also realize power gain control .

进而详细研究了在空间电荷效应作用及相聚过程共同作用下形成饱和电流的过程。

Second , the formation of the saturation current affected by the space charge effect and bunching effect is studied in details .

降低寄生源漏电阻可以获得更高的饱和电流、跨导和截至频率。

The calculated results also indicate that higher saturation current , transconductance , and cutoff frequency can be achieved by lowering the parasitic resistances .

用混沌动力学方法对多道扫描静电探针的离子饱和电流信号进行分析，研究了等离子体尾迹流场。

A plasma wake flow field is studied by analyzing the saturated ionic current of multiple scanning probes with the method of chaos dynamics .

直流测试表明，器件的最大饱和电流密度为125mA/mm，最大非本征跨导达250mS/mm；

The DC characterization shows that the maximum saturation current density is 125mA / mm , the maximum extrinsic transconductance is 250mS / mm .

本文作者在国内首次成功地对热电半导体制冷组件在-50～+70℃温度范围内进行了热电特性参数（1）塞贝克系数α.半导体制冷中的饱和电流

This paper , deals with first time in China , the measurements of thermoelectric properties of the thermoelectric cooling module . THE SATURATION CURRENT IN THERMOELECTRIC COOLING

处理后，器件各栅偏压下的源漏饱和电流降低了，栅漏击穿电压有了显著提高。

The saturation drain current at each gate bias decreased while the gate to drain breakdown voltage increased remarkably with the ( NH 4 ) 2S x treatment .

对于栅长为0.8μm的器件，最大非本征跨导和饱和电流密度分别为350mS/mm和190mA/mm。

Maximum extrinsic transconductance and maximum saturation current density are 350 mS / mm and 190 mA / mm respectively for the devices with gate length of 0.8 μ m.