饱和压降

高压低饱和压降GTR最佳设计

The Best Design of High Voltage and Low Saturation Voltage GTR

还定量分析了复合管的饱和压降。

The saturation voltage of the multiunit tubes is also quantitatively analysed .

ZQ正向饱和压降的研究

The Study for forward Saturated Voltage - drop of ZQ

本文提出了高压低饱和压降GTR的最佳设计方法。分析表明，高压低饱和压降晶体管采用集电区穿通性设计比非穿通性设计有利。

The best design method of high voltage and low saturation voltage GTR presented in this paper shows that the collector region through design is better than non-through design .

本文介绍了静电屏蔽晶体管（GAT）的结构与器件性能，该器件具有高耐压，高速和低饱和压降等优良特性。

A static shielding transistor ( gate associated transistor , GAT ) is presented in the pa - per . The device has the advantages of high breakdown voltage , fast switching speed and low satura - tion voltage drop as well as the improved reliability .

介绍了hfe≥12000的两级功率达林顿器件的设计方法及关键技术。并对在10A比1mA的条件下实现低饱和压降的几项措施作了较详细的讨论。

This paper introduces the design method and critical technology of two-staged power Darlington device whose hfe is no less than 12000 , and make a detailed discussion on how to realize lower saturated voltage drop at a current ratio of 10A / 1mA .

检测场效应功率晶体管饱和压降实现限流控制

Realization of Current limited Control through Testing the Saturable Voltage Drop of MOSFET

关于高压功率晶体管的饱和压降

On the Saturation Voltage of High-Voltage Power Transistors

该模型可供优化设计双极型高频、高压、低饱和压降功率器件参考。

This model will provide assistance to the optimal design of bipolar power transistor with high frequency and high breakdown voltage .

介绍了一种通过检测场效应功率晶体管饱和压降来检测负载电流，实现限流控制的新方法。

A new method for testing the load current and realizing the current limited control through testing the saturable voltage drop of MOSFET is introduced .

介绍了用于节能灯照明电路的高耐压功率晶体管的反向击穿电压、饱和压降和开关时间等参数的设计要求。

In this pager , the characteristics of high voltage switching power transistor used in electronics ballast , such as breakdown voltage , saturation voltage , and switching time are introduced .

结果表明，采用磁控溅射方法制备的银系多层金属电极能显著降低功率晶体管的热阻，减小饱和压降和改善大电流特性。

The results show that silver multilayer metal electrodes deposited by magneton sputtering are effective for reducing the thermal resistance and saturation voltage of power transistor , and for improving the device current character .