非晶半导体

超化学剂量Sb2Se3的Sb对Sb-Se系统非晶半导体晶化行为的影响

Effects of Extra Sb in Sb_2 Se_3 Stoichiometry on the Crystallization Behavior of Amorphous Semiconductor of Sb-Se System

四面体键合非晶半导体的理想分形结构模型

A Model of the Idealized Fractal Structure of Tetrahedrally-Bonded Amorphous Semiconductor

硫系非晶半导体薄膜中的超快光Kerr效应

Ultrafast optical Kerr effect in amorphous chalcogenide films

本文报导了aSi：H/aSi（1-（））Nx：H非晶半导体超晶格薄膜的制备方法及其量子尺寸效应。

In this paper the preparation method and quantum size effect of a Si : H / a Si_ ( 1-x ) N_X : H amorphous semiconductor superlattice films are reported .

本文以层状的CTRW模型为基础，对非晶半导体超晶格中的瞬态光电导作了理论计算。

On basis of a layered CTRW model the transient photoconductivity in amorphous semi-conductor superlattices is calculated .

借助著名的谢尔宾斯基（Sierpinski）分形，构造四面体键合非晶半导体的一种理想分形结构模型，并研究其倒格子空间的构造。

A model of idealized fractal structure of the tetrahedrally-bonded amorphous semiconductor is set up with the aid of well-known Sierpinski Gasket , and the construction of the reciprocal space is also studied .

非晶半导体超晶格喇曼谱中类光学模的研究

Study of TO-Like Mode in Raman Spectra of Amorphous Semiconductor Superlattices

对非晶半导体离子注入高像质非晶硅薄膜晶体管液晶显示器的研究

Study of High Image Quality Amorphous-Silicon Thin Film Transistor Liquid Crystal Displays

对非晶半导体离子注入药物离子导入和干扰电多功能治疗仪的电路设计

Circuit Design of Apparatus Used in Multi-functional Drug-Iontophoresis and Interference Electric Current Therapy

高压下非晶半导体薄膜材料吸收边的测定

The Measurement of Absorption Edge of Amorphous Semiconductors Thin Films under High Pressure

两种新型的非晶半导体多层结构

Two New Types of Amorphous Semiconductor Multilayered Structures

非晶半导体超晶格紫外-可见-红外光谱的研究

Investigation of UV-VB-IR Spectra for Amorphous Semiconductor Superlattices

非晶半导体光致发光的温度依赖关系

Temperature dependence of photoluminescence in amorphous semiconductors

非晶半导体的研究与应用

Research on amorphous semiconductors and its applications

对非晶半导体离子注入氧等离子注入对膨体聚四氟乙烯膜表面性能和细菌黏附影响的实验研究

Surface modification of expanded polytetrafluoroethylene membrane by oxygen plasma immersion ion implantation and its antibacterial adhesion efficiency

本文提出了用红外光激励电流法研究非晶半导体带隙态的新方法。

A new method of measuring the density of gap states in amorphous semiconductors by employing a two-beam photoconductivity experiment is reported .

本文从迁移率涉及的单晶理论的局限出发，对碱锑型光电阴极建立了类似于非晶半导体的能带结构模型。

An energy band model amorphous semiconductor is presented for alkali metal antimonide photocathode , which is different from previous crystalline model .

本文应用统计物理的方法，讨论了非晶半导体的掺杂效应，特别是在低温下的特性。

This article discusses doping effects in amorphous semiconductors , especially the properties at low temperatures , using the method of statistical physics .

在荷电的悬挂键模型下，计算了各种情况下的费密能级和电子浓度。并对两类不同的非晶半导体作了详细的讨论。

With approximation of single dangling bond , the positions of Fermi level and the electron densities have been calculated for two groups of amorphous semiconductors .

本文首先简要地回顾了非晶半导体的历史和近年来含氢非晶硅瞋的迅速进展。

This paper firstly gives a brief review about the history of amorphous semiconductor and the rapid progress in hydrogenated amorphous silicon ( a-Si : H ) film in recent years .

该法的优势在于工艺简单有效、制备面积大、成本低、设备简单、不要求真空系统、沉积温度较低；可生长出稳定性好、质量高的多晶或非晶半导体薄膜。

The method produces good qulity polycrystalline or uncrystalline semiconductor films with simple and effective technology over a large area at a low cost and low temperature , at the same time , the request of vacuum is not high .

本文根据非晶半导体中的荷电悬挂键模型，用统计力学的方法推导出三种荷电缺陷中心的分布函数，并由此得到系统的费米能级和荷电中心上平均电子数的关系式。

In this paper , the distribution functions of three kinds of charge defect centers are given by using statistical mechanics method according to model of charge defect centers in amorphous semiconductors . The relation between Fermi energy and average electron number at charge defect centers is also given .

该网络系统主要由非晶硅半导体PIN光电探测阵列和胜者全取电子网络组成。

The system is mainly composed of a Si PIN photo electrical detector and WTA electrical network .

叙述了非晶硅半导体的结构、制备方法及特性，介绍了非晶硅在制作光电传感器、色敏传咸器、放射线（X射线等）传感器及应变传感器等方面的应用。

The structure , preparation and properties of amorphous silicon ( a-Si ) material were de - scribed . The application of a-Si in sensors , such as photodiode , colour sensor , X-ray sensor and stress sensor etc.

非晶氧化物半导体（AOS）由于迁移率高，可以在低温下制备等优点而受到研究者的广泛关注。

Amorphous oxide semiconductors ( AOS ) have attracted many researchers ' attention due to its high mobility and low temperature processing .

非晶Ge-S半导体薄膜的研制

The research of amorphous semiconductor Ge-S films

非晶硅半导体及其在传感技术中的应用

Amorphous Silicon and Its Application in Sensor Technology

氢化非晶硅膜在半导体器件表面钝化上的应用

Application of hydrogenated amorphous sillicon film to surface passivation of semiconductor devices

非晶硅基合金半导体的研究进展

Advance in amorphous semiconductors

非晶Si和非晶Si基合金半导体的g因子计算

Calculation for g-values of the amorphous Si and amorphous Si-based alloy semiconductors