雪崩击穿

GaAs功率MESFET的栅-漏雪崩击穿

Gate - Drain Avalanche Breakdown in GaAs Power MESFET 's

模拟分析表明，采用该结构，器件的雪崩击穿电压能提高到理想平行平面结的90%以上，器件的大电流特性和频率特性也有所改进。

The simulation analysis indicates that with this structure the avalanche breakdown voltage of RF power transistors can be increased to be over 90 % of that for an ideal parallel planar junction , and the large current characteristics and frequency characteristics can be improved , too .

高斯掺杂分布GaAs肖特基结的雪崩击穿电压

Avalanche Breakdown Voltage Calculation of GaAs Gaussian Profile Schottky Diodes

SiGeHBT中雪崩击穿效应对电流电压特性的影响

The Avalanche Effects on Current and Voltage Characteristics in SiGe HBT

PN结构成了几乎所有半导体功率器件的基础，其雪崩击穿电压直接决定了相关器件的工作电压范围。

PN junction is the foundation of almost all the power devices . The avalanche breakdown voltage of PN junction determines the work voltage range of related power devices .

等平面化自对准硅雪崩击穿电子发射阵列器件的设计和研究

Design and research of quasi-planar self-aligned silicon avalanche electron emission array

高压扩散结雪崩击穿参量的解析计算

Analytical Calculation of Avalanche Breakdown Parameters in High-Voltage Diffused p-n Junction

超突变结构变容二极管雪崩击穿电压的研究

The study of avalanche breakdown voltage for hyperabrupt varactor diode

本文报道了等平面化自对准硅雪崩击穿电子发射阵列器件的结构设计和工艺过程。

The device structure and technical processings of quasi-planar self-aligned silicon avalanche electron emission array are introduced .

雪崩击穿式半导体激光器

Avalanche breakdown semiconductor laser

三探针测试硅外延片中雪崩击穿时耗尽层宽度的面接触模型

The Area Contact Model of Depletion Layer Width Under Avalanche Breakdown in Si Epitaxial Wafer by a Three-Probe Method

与已报道的其它结构硅雪崩击穿电子发射器件相比较，该器件的电流电压特性曲线有更宽的线性区域和更低的通导电阻。

Its I-V characteristics show a larger linear region and lower series resistance than that of the previous silicon avalanche electron emission devices .

模拟结果解释了实验观察到的雪崩击穿现象，并表明电子电流比空穴电流提前饱和。

The results explain the experimental observed phenomenon and demonstrate that the current contributed by electrons is saturated earlier than the hole current .

采用雪崩击穿模型，并根据晶体材料反射率与材料的介电常量的依赖关系，通过数值计算，模拟了材料烧蚀阈值与脉宽的依赖关系及材料激发过程中反射率的变化关系。

Then based on the avalanche mode and the relationship between the reflectivity and the dielectric constant , a calculation in theory is made .

在本模型中，整个击穿过程主要包含两个机构，一个是本征型的雪崩击穿，另一个是引起膜的破坏性击穿的丝状热传递。

There are two main mechanisms that one of which is the avalanche breakdown , so-call intrinsic type , and the other is the filament heating transport leading to the destructive breakdown exist in the breakdown process .

通常所谓的雪崩式击穿现象爆发了。

What was known as avalanche breakdown occurred .

基于偏压的虚警控制原理，利用单片机便于数据处理和存储的特点，设计了一个自动跟踪雪崩管击穿电压的数控偏压电路。

Based on the false alarm control theory and the characteristic of the chip microcomputer 's convenience to treating and holding digital information , a numeric control bias circuit auto-tracing the avalanche breakdown voltage is designed .

具有雪崩体特性击穿的高温高压大功率硅器件的设计和制造，需要对器件的耐压稳定性和表面特性进行细致地控制以获得优良特性。

The design and fabrication of high-voltage power devices with avalanche breakdown bulk characteristic under high temperature needs to carefully control the breakdown voltage stability and surface characteristic of the devices as the power rate increases .

对于电阻模型，建立了从线性电阻和速率饱和区域、雪崩倍增和热电击穿区域来分段分析其特性。

Toward to resistor model , the linearity electric resistance and saturated regions , avalanche multiplications and electrothermal breakdown regions has built and analyze the characteristics respective .

固体雪崩管被触发工作在雪崩或二次击穿瞬间时能输出很大的脉冲峰值电流，且触发晃动和上升时间都很小，因此广泛用于制作重复频率低而脉冲功率高的快脉冲源。

The solid avalanche transistor which is triggered to the state of avalanche or the moment of second break down can output high pulse peak current with little jitter and short rise time .