门极

本文就GTO应用中的主要技术&门极电路作了较为深入的分析和研究。

Thorough analysis and study have been made upon the gate circuit as a main technique in CTO applications .

IGCT是一种基于GTO结构并利用集成门极电路进行硬驱动控制的大功率半导体开关器件。

IGCT is a kind of high power semiconductor based on GTO structure , which achieves hard turn-off by the integrated gate circuit .

这是对一门极为复杂的学科的有益入门教程。

It 's a useful introduction to an extremely complex subject .

介绍了非对称型门极换流晶闸管的P基区结构。

In this paper , the structure and mechanism of P base region of asymmetry Gate Controlled Thyristor are briefly introduced .

文中采用数值迭代法和建立等效电流模型，对PB层结构参数和门极-阴极几何图形尺寸进行了合理设计。

Reasonable designs of the structure parameters of PB layer and the gate-cathode geometry are obtained by numerical iteration and an equivalent current model .

具有先进保护功能的新型IGBT门极驱动器集成电路

A New Gate Driver Integrated Circuit for IGBT Devices with Advanced Protections

浅析IGBT的门极驱动

Brief analysis on IGBT 's gate driving

文中还介绍了单极性SPWM发生器、双微分门极驱动电路和无损耗缓冲吸收电路的工作原理。

The principles of uni-polar SPWM generator , double-differential-gate-drive circuit and loss-less snubber are presented .

IGBT门极驱动电路的研究

IGBT Gate Drive Circuit

介绍了采用绝缘门极双极晶体管（IGBT）作为开关元件的弧焊逆变器。

This paper introduces the Insulated gate bipolar transistor ( IGBT ) inverter for arc welding . The prin (?)

一种HefnerIGBT模型门极电容参数的提取方法

A Method of Parameters Extraction of Gate Capacitance of Hefner IGBT Model

大功率GTO门极触发信号的改进与仿真

Improvements and Simulation of High-power GTO Gate Trigger Signal

阐述了新型功率半导体器件&集成门极换向型晶闸管IGCT（IntegratedGateCommutatedThyristor）的基本工作原理和关键设计技术。

The paper introduces the operation principle and key technology of the Integrated Gate Commutated Thyristor ( IGCT ) .

从GTO门极关断波形分析其关断能力

Analysing Turn - off Capacity of GTO Thyristor from Its Gate Turn - off

一种采用阴极开路技术的GTO门极驱动电路

GTO Gating Circuit by Open Cathode Method

GTO门极触发电路的设计

The Design of GTO Gate Triggering Circuit

介绍了绝缘门极双极性晶体管（IGBT）的基本结构、工作原理、开关特性，以及在焊接逆变器中的应用。

The paper introduces the basic structure , working principle and switching feature of IGBT and its application to the converter used for welding .

介绍了一种新型GTO门极关断电路，它可以实现GTO的快速关断。

Introduces a new gate turn-off drive circuit of GTO thyristors , which can accomplish faster turn-off .

DC1500V辅助变流器IGBT门极驱动电路

IGBT gate drive circuit for DC 1 500 V auxiliary converter

它是以隔离门极功率晶体管IGBT为主要功率开关元件，电路采用先进斩波技术的无级调速装置。

It has IGBT as the main switch component , and the new stepless speed regulation device , which is of the advanced circuit for control .

在分析GTO内部机理的基础上，用无源器件建立了GTO门极模型。

The gate model is formed with passive devices on the basis of analyzing the internal mechanism of GTO .

从20世纪70年代初开始，交流传动技术已经从常规晶闸管技术发展到了门极可关断（GTO）技术。

From the 70s of the 20th century on , AC drive technology was developed from thyristor technology to GTO technology .

大功率集成器件&集成门极换流晶闸管IGCT

High Power Integrate Devices & Integrated Gate Commutated Thyrister

基于对影响门极换向晶闸管（GCT）阻断能力的限制因素的理论分析，对其N基区的宽度进行了计算。

Based on the theoretical analysis of factors which limit the voltage blocking capability of a gate commutated thyristor , simple design criteria are developed to calculate the thickness of the N base .

报道了带门极双层Si-δ-掺杂GaAs样品中的二维电子系统Hall效应的低温测量实验，观察到了电子耗尽过程中电子浓度与门电压的奇特、复杂的非线性关系。

The low-temperature measurement of Hall effect of the two-dimensional electron system in a double-layered gated Si - δ - doped GaAs is presented . A complex peculiar nonlinear dependence of the depletion on gate voltage is observed .

给出了多个GTO元件关断时的电流、电压波形.并对其门极电流、电压波形进行了分析和比较。

The paper gives the current and voltage waveforms of multi GTO devices at turn-off , analyzes and compares the waveforms of gate current and voltage .

中心锥形槽状光敏门极的200A，1200V光控双向晶闸管的研制

Development of 200A , 1200V Light Triggered Triacs with a Center Cone-Shaped Groove Light Sensitive Gate

同时，采用专用芯片SG3525来产生脉宽调制电路，由IR2110组成的驱动电路来驱动绝缘门极双极晶体管（IGBT）。

Special chips , such as SG3525 and IR2110 are also used to generate PWM and to drive the IGBT .

分析了新型器件集成门极换向晶闸管IGCT的原理，并介绍IGCT-PWM调速系统的PWM波生成新方法和其它负荷无功的补偿。

The basic principle of novel device IGCT is described . A new PWM scheme of a IGCT_PWM speed regulation system and compensating other load reactive power are introduced .

作为应用组合模型原理的实例，文中给出了组合绝缘门根晶体管模型、组合门极可关断晶闸管模型和组合MOSFET控制晶闸管模型，并和实际器件进行比较。

The composite insulated Gate Bipolar Transistor model . Gate TurnOff Thyristor model and MOSFET Control Thyristor model are presented as examples of the composite model method , together with simulations and experimental results .