量子器件

在量子器件方面，主要介绍量子器件和半导体自旋器件的概况。

In quantum device , general situation semiconductor self-spining device are introduced .

半导体量子器件

Semiconduc to r Quantum Device

基于RT量子器件的数字电路设计

Digital Circuits Design Based on RT Quantum Devices

特别是近年来，Ge纳米晶镶嵌在介质母体材料中表现出各种各样的光学特性，受到越来越多的研究者关注，人们期待着将这种优越光学特性的特性展现在光电子以及量子器件当中。

Especially , in recent years , Ge nanocrystals embedded in dielectric matrix material show various optical properties , and attract many researchers attention .

论文设计了基于RT量子器件的二值与非门与或非门，设计的门电路结构简单，并具有量子器件所具有的速度快、功耗低、集成度高等优点。

The designed gates have simple configuration , they also have the advantages that quantum devices possess , so they can suit the requirement of VLSI .

Graphene材料在纳米微电子器件、光电子器件、自旋量子器件以及新型复合材料方面有着广泛的应用前景。

Graphene & material has broad application prospects in nano-microelectronic devices , optoelectronic devices , spin quantum devices , as well as new composite materials .

InAs纳米线在纳米电子器件、纳米光子器件、量子器件、生物传感和检测、纳米物理与化学等方面具有巨大的应用价值和科学意义。

InAs nanowires are now exploring its potential in application and science , such as nano-electronic devices , nano-photonic devices , quantum devices , bio-sensors , nano-physics and nano-chemistry .

隧穿二极管是一种很有前途的基于带隙工程的异质结构量子器件，其电流电压（I-V）曲线中所呈现的微分负阻特性能够用于开发多种不同的电路功能。

Tunneling diode is one of the promising nano devices based on energy band engineering of Si / SiGe heterostructure . Because of the negative differential resistance revealed by its current-voltage ( I-V ) curve , tunneling diode can be used to design many kinds of complicate integrated circuits .

阵列量子器件的信噪比与处理

Signal to Noise Ratio and its Processing in Array Detector

硅基单电子晶体管是一种极具潜力的新型量子器件。

Silicon single-electron transistors are a new-style dot device of great potentials .

多峰I&V特性的共振隧穿量子器件

Resonant Tunneling Quantum Devices with Multiple-Peak I-V Characteristics

T型量子器件的理论研究

A theoretical analysis of T-shape quantum devices

半导体量子器件物理讲座第四讲共振隧穿器件及其电路应用

Resonant tunneling devices and their circuit applications

量子器件与量子信息技术

Quantum devices and quantum information technology

这些结果对于磁性半导体异质结在量子器件方面的应用可能是有帮助的。

These results may be helpful to make the magnetic semiconductor heterostructures into the quantum devices .

纳米半导体量子器件评述

Review On Nanometer Semiconductor Quantum Devices

量子器件模型的建立与计算机模拟对于实验有着重大的指导意义。

The formulation of quantum devices model and its computational simulation have important significance of guidance .

量子器件的计算机模拟

Computer Simulation of Quantum Devices

共振隧穿二极管因其特有的负微分电阻特性，成为一种很有前途的基于能带工程的异质结构量子器件。

The resonant tunneling diode ( RTD ) is one of the most promising band-gap engineered heterostructure devices due to its negative differential resistance .

随着微细加工技术与纳米科技的发展，量子器件必将成为下一代集成电路的基础。

With the development of micro-fabrication techniques and nano-scale science and technology , quantum devices will be the basis of the next generation integrated circuits .

本文综述了量子器件的几种输运模型及其模拟结果，并对量子器件物理模型及其辅助设计提出了设想。

This article synthetically lead in some kinds of transportation-model and the result of their simulations , advancing some ideas of the quantum devices physical model and its computer aided design .

其主要目的在于揭示介观系统中的新效应及其物理机制，并为设计和实现具有应用价值的量子器件提供物理模型和理论依据。

Our aim is to explore the physical mechanisms of new effects in such a mesoscopic system , to develop physical models and supply theoretical basis in designing novel quantum devices with desired properties .

低维结构在未来的各种半导体光电和微电子量子器件的设计和制造中具有十分重要的应用价值，为此，人们迫切需要了解这类体系的电子、声子等各方面的物理特性。

It is reported that many new semiconductor photoelectric and microelectronic quantum devices will be made from these low dimensional structures in the future . Therefore , it is urgent for people to understand various physical properties of these structures .

随着半导体低维物理领域的不断发展，基于半导体低维结构的量子器件的研究与应用越来越受到人们的重视，由此也促进了相关基础研究不断取得新的进展。

With the continuous development of low-dimensional semiconductor physics , people have paid more and more attention on the exploration of the devices based on low-dimensional semiconductor structures . That , in return , motivates that many new progresses of fundamental research in this field have been achieved continually .

GaN系量子阱器件的研究进展

Research advances in GaN-based QW devices

研究者同时利用磁场测量的“金标准”&超导量子干涉器件（SQUID）对心跳信号进行了记录。

The same signals were recorded using the " gold standard " for magnetic measurements , a SQUID ( superconducting quantum interference device ) .

超导量子干涉器件（SQUID）磁强计在测量这样极低的磁信号方面具有无可替代的作用，它是目前探测磁场最灵敏的器件。

Superconducting quantum interference device ( SQUID ) magnetometer has an irreplaceable role in measuring very low magnetic signals , it is the most sensitive devices for detecting magnetic field .

设计了一种高温超导平面式梯度计的探测线圈，利用这种探测线圈与超导量子干涉器件（SQUID）耦合，可以制成二阶或更高阶的高温超导SQUID平面式磁场梯度计。

We have proposed a novel method for designing the second_order planar gradiometers and even high_order gradiometers . The gradiometer consists of two parts , one is the superconducting quantum interference device ( SQUID ), the other is the pickup loop which is directly coupled with the SQUID .

电子在耦合的多量子点器件中的动力学特性

Dynamical Characteristic of Single Electron in Coupled Quantum Dots

热涨落作用下超导量子干涉器件系统的研究

Studies on Superconducting Quantum Interference Device System in the Presence of Thermal Fluctuations