辐射复合

GaP：N，Zn中等电子陷阱与Zn受主之间的辐射复合

Radiative Recombination between Isoelectronic Trap and Zn Acceptor in GaP : N , Zn

对ZnO薄膜发光光谱常见的三个发光带，即紫外、绿光和黄光而言，紫外发光普遍被认为是带-带直接辐射复合发光或激子发光；

There are usually three types of luminescence bands in spectrum of ZnO thin film , which are UV luminescence , green luminescence and yellow luminescence . Ultraviolet emission is generally attributed to band-band direct radiative recombination or excitons radiation .

重金属镉（Cd）和增强UV-B辐射复合对大豆生长和生理代谢的影响

Effect of Cadmium and UV-B radiation in combination on growth and physiology of soybean

对ncSiSiO2薄膜中纳米硅（ncSi）、Er3+和非辐射复合缺陷三者间的关系作了研究。

Correlation between nc Si , Er 3 + and nonradiative defects in Er doped nc Si / SiO 2 films is studied .

紫外光发射是近带边激子的辐射复合产生的，而绿光发射则通常被认为与ZnO薄膜的内部本征缺陷有关。

Ultraviolet emission peak is attributed to the exciton-related emission near the band-edge and green emission band is attributed to the intrinsic defects of ZnO generally .

基于DiracSlater自洽场方法，计算了Bi79+离子从低能到高能的光电离截面以及其逆过程Bi80+的辐射复合截面；

The Dirac_Slater method is used to calculate the photoionization cross sections of Bi ~ 79 + from low to high energy .

GaN衬底和GaAs外延层二者之间较大的晶格失配，导致GaAs外延层缺陷密度很高，非辐射复合增强是造成GaAs光致发光强度低的原因。

The large lattice mismatch between the GaAs substrate and the GaN epitaxial layer , resulting in high-density defects in GaAs epitaxial layer and enhanced non-radioactive , is the reason of low photoluminescence intensity of GaAs .

a-Si：H和a-SiNx：H薄膜中的缺陷以及载流子的非辐射复合

The defects and the nonradiative recombination of photogenerated carriers in a-si : h and a-sin_x : h

荧光光谱行为与有效质量理论计算研究表明，Al原子在异质结界面的扩散在离子注入过程中已基本完成，而热退火作用主要是去除无辐射复合中心。

The results of the PL spectra and the calculation based on effective mass approximation theory show that the proton implantation is the dominate process for Al diffusion across the heterointerfaces . The main effect of rapid thermal annealing is to remove the non-radiative centre .

然而si是间接带隙半导体，其内部存在着很多非辐射复合机制，导致Si材料的发光性能很差，这就限制了Si在光电集成领域的应用。

However silicon has an indirect band gap , and there are many non-radiative recombination mechanism inside the silicon . All these aspects leads to the poor optical property of silicon , and restrict the application of Si in the field of optoelectronic integration .

掺铒nc-Si/SiO2薄膜中nc-Si和Er~（3+）与非辐射复合缺陷间相互作用对薄膜发光特性的影响

Influence of coupling between Er ~ ( 3 + ) , nc-Si and nonradiative centers on photoluminescence from Er ~ ( 3 + ) - doped nc-Si / SiO_2 films

探讨高激光损伤阈值腔面处理技术，包括真空解理、腔面钝化处理、高损伤阈值腔面膜，以抑制腔面的氧化，降低腔面表面态密度，减少非辐射复合，提高器件的COD阂值。

Investigate the high laser damage threshold cavity surface processing technology , including vacuum cleavage , cavity surface passivation , high damage threshold coating . To suppress the cavity surface oxidation , reduce the density of surface state , decrease the radiative recombination , in order to improve COD threshold .

应用红外光谱仪、分光光度计、光声谱仪和正电子湮没寿命谱仪，从不同的角度，研究a-Si：H和a-SiNx：H薄膜中的成分、缺陷以及光生载流子的非辐射复合。

The defects and the nonradiative recombination of photogenerated carriers in a-Si : H and a-SiNx : H films are studied by using infrared spectrometer , spectrophotometer , photoacoustic Spectrometer and positron annihilation life-time spectrometer from various respects .

当触发光脉冲消失后，单极电荷畴内雪崩电离和辐射复合在开关体内形成了载流子高导电通道，成为了载流子倍增的源泉，控制着Lock-on电流。

When the triggering light goes , the avalanche impact ionization and recombination radiation in the domain result in the formation of the carriers ' conductive channel in the body of the devices and control the current of the Lock-on switching .

结果表明，小注入情况下，980nm半导体激光器的低频电噪声主要表现为1/f特性，并与器件的表面非辐射复合电流有着良好的对应关系。

The results indicate that the low frequency electrical noise of 980 nm semiconductor lasers mainly behaves 1 / f noise and exhibits good relation with surface non-radiative current at low injection .

Franz-Keldysh效应随阱厚的增加而加强；压电极化和自发极化形成的内电场在空间上将电子和空穴隔开，但电子和空穴波函数的交叠允许它们在较低的能级上辐射复合；

Franz-Keldysh effect well enhanced with thickness increasing , inner electrical field induced by piezoelectricity and spontaneity polarization separated electron and hole spatially , radicalization recombination occured at lower energy level because of wave function overlap of electron and hole ;

掺磷非晶硅的辐射复合和非辐射复合

Radiation Recombination and Non-Radiation Recombination Process in P Doped Amorphous Silicon

树脂纳米铈防辐射复合材料的制备及其性能研究

Preparation of resin nano-cerium shielding radiation composite and its properties researching

蜂窝体中对流、辐射复合换热效应

Heat Transfer Effect Combining Convection with Radiation in Honeycomb Ceramics

非结构网格中导热和辐射复合传热的数值计算

Combined Radiation and Conduction Heat Transfer Calculations Using Unstructured Grid

吸收辐射复合金刚石膜的制备及光学研究

Study on the compound film of diamond for absorbing radiation

用荧光谱研究GaAs：C的辐射复合过程

The radiative recombination process of gaas : C is studied by luminescent spectra

高离化态离子的辐射复合及相关过程的理论研究

Theoretical Study on Radiative Recombination and Relevant Processes of the Highly Charged Ions

氮化镓外延单晶中束缚激子辐射复合的偏振特性

The polarization properties of the recombination emission of bound excitons in epitaxial GaN crystal

非辐射复合对微腔半导体激光器自发发射寿命调制特性的影响

The Influence of Nonradiative Recombination on the Spontaneous Lifetime Modulation Properties of Microcavity Semiconductor Lasers Methods

器件老化主要是器件焊接、封装和非辐射复合中心的增加造成的。

We attribute the degradation to the chip packaging , soldering and increasing of nonradiative centers .

热塑性聚氨酯防辐射复合材料的性能

Properties of radiation-proof thermoplastic polyurethane composites

非辐射复合对1.3μmInGaAsp/Inp激光器T0的影响

The Effect of Nonradiative Recombination on the T_0 Value of 1.3 μ m InGaAsP / lnP LD

高于550℃时，光致发光强度减弱，热缺陷增加了非辐射复合中心。

The PL intensity decreases beyond 550 ℃ and the thermally-induced defects increase the nonradiative carrier-recombination centers .

固定床与平板表面导热、对流和辐射复合传热的理论研究

A Theoretical Study of Combined Hear Transfer With Conduction , Convection and Radiation between Plates and Packed Beds