能带模型

  • 网络Energy Band Model
能带模型能带模型
  1. 提出了粉体的晶粒生长模式以及ATO的能带模型。

    The grain growth pattern and energy band model were proposed .

  2. 根据半导体电化学能带模型和腐蚀电化学混合电位模型,晶格畸变导致晶体费米能级EF升高和交换电流密度增大,从而使黄铁矿腐蚀电流增大,腐蚀速率提高。

    According to energy band model of semiconductor and mixed potential model of corrosion electrochemistry , the corrosion current of pyrite increases with the increase of pyrite Fermi energy ( E F ) and exchange current density , that is , the rate of dissolution increases .

  3. 固体C(60)/Si异质结的电学表征&整流特性、能带模型与温偏效应

    Electrical characterization of solid c60 / si heterojunctions rectifying properties , energy-band models , and bias-temperature effect

  4. 用准平衡能带模型研究MIS结构场增强非平衡瞬态

    A Study of Field-Enhanced Non-Equilibrium Transient in MIS Structure by Using Quasi-Equilibrium Energy-Band Model

  5. 提出了带有缓变层a-Si∶H电池的能带模型,据此分析了p/i结附近载流子的复合动力学过程,从理论上解释了实验中所发现的现象。

    Energy band models of a Si ∶ H solar cells with buffer layer were established to explain the photoexcited carrier recombination kinetics near the p / I interface , from theoretical point of view .

  6. 在四能带模型的基础上,建立了光系统II各功能单元间的能量传递动力学模型,分析了不同光照情况下的能量传递差异情况。

    The dynamic model of energy transfer between each function unit of photosystem ⅱ was made by improving a four band model . The difference of energy transfer with different light intensity was analyzed .

  7. 采用黄金定则方法和Kane六能带模型,分析了半导体中的量子干涉控制光生电流效应。

    Quantum interference control photocurrent in bulk semiconductors is analyzed using the Fermi golden rule and Kane six-band model .

  8. 根据半导体玻璃的能带模型以及XPS的实验结果,提出了该硫系玻璃电极的选择性响应机理。

    Based on the models of energy band structure of the semiconductor glasses and the results of XPS , the mechanism of ion-selective response of the glass electrodes was proposed .

  9. 由二子能带模型密度矩阵方法,导出了子带间光跃迁的Maxwell-Bloch(MB)方程。

    The Maxwell-Bloch ( MB ) equations of two-subband model are derived , and the OB state equation for a ring cavity is obtained from the stationary solution of the MB equations .

  10. 测量了GDa-Si:H/n-c-Si异质结的高频C-V特性,由平带电压的偏移,计算了有效表面电荷和表面态密度,应用突变异质结能带模型对结果作了分析。

    The high frequency C-V characteristics of GD a-Si : H / n-c-Si heterojunctions are measured . The effective surface charge and effective surface state density are also determined from flat-band voltage . The experiment results are analyzed by abrupt heterojunction energy band model .

  11. 从Pauli自旋的ESR强度可推算给定锂嵌碳样品的电子态密度曲线,并进而计算能带模型机理对该样品嵌锂容量的贡献。

    From the ESR intensity of Pauli spins , the curve of the density of electronic states can be deduced for the carbon material studied and , in turn , the contribution of the band model mechanism to the lithium intercalation can be calculated for the given carbon sample .

  12. 用能带模型研究了黄药与硫化矿物的作用机理,说明了硫化矿物表面捕收剂膜的稳定性与半导体能带结构的关系,并推导出黄铁矿Barsky关系式。

    The interaction mechanism between xanthate and sulphide minerals was discussed by means of energy band model , and the correlation of stability of collector 's coating with energy band structure of semiconductor was also illustrated , meanwhile the Barsky formula was deduced from theory .

  13. 在研究中我们采用了较简单的准平衡能带模型来分析有效产生区宽度。

    The quasi-equilibrium energy-band model is applied in the analysis .

  14. 通过对特性曲线的拟合,提出了基于载流子隧道效应的能带模型。

    Based on the I-V characteristics , an energy band diagram was proposed .

  15. 一种由自由电子能带模型计算费米能级的方法

    Fermi Level Calculation by Free Electronic Band Model

  16. 固体电解质的离子能带模型

    The Ion Band Model of Superionic Conductors

  17. 基于能带模型计算出的电导&温度关系结果与试验结果相符合。

    The results showed that the conductivity temperature dependence based on the model was in accord with experimental results .

  18. 利用平均能带模型研究了稀土铁石榴石晶体化学键的性质,结果表明,这些晶体虽然包含的稀土离子不同,但计算得到的化学键参数值几乎相同。

    By using the average band gap model , chemical bond properties of rare earth Fe garnets are studied .

  19. 电化学调控浮选能带模型及应用(Ⅲ)&有机抑制剂对硫化矿物能带结构的影响

    Energy band model of electrochemical flotation and its application (ⅲ) & Effects of organic depressants on structure of sulphide minerals

  20. 采用自旋相关效应和库仑效应的理论,解释了能带模型失效的问题。

    On applying the self spin correlation effect and coulomb theory , this article give a explanation to the prob - lem of the disability of energy band mode .

  21. 进而,讨论了能带模型对模拟结果的影响,发现色散关系与能态密度均对模拟结果有较大影响。

    Furthermore , the influence of band model on simulation result is also investigated . We show that the dispersion relations and density of state are all important in simulation .

  22. 本文采用电子吸收光谱和分子轨道(MO)-能带理论模型,系统地研究了不同颜色的闪锌矿呈色的机理和本质。

    The mechanism of coloration of sphalerite has been studied with the help of optical absorption spectroscopy and the single electron MO-energy band model .

  23. 用微观量子理论和能带跃迁模型,研究了极向磁光Kerr效应对电子自旋交换劈裂能依赖性。

    The dependence of polar Kerr effect on electron exchange splitting energy is investigated by using the microscopic quantum theory and energy band transition model .

  24. 在Kasha规则基础上,建立了稀土配合物的能带结构模型。

    Based on the Kasha rule , the energy band structure model of the rare earth complexes had been set up .

  25. 通过能带耦合模型解释样品的室温铁磁性。

    The origin of RTFM can be interpreted in terms of band coupling model .

  26. 本文从迁移率涉及的单晶理论的局限出发,对碱锑型光电阴极建立了类似于非晶半导体的能带结构模型。

    An energy band model amorphous semiconductor is presented for alkali metal antimonide photocathode , which is different from previous crystalline model .

  27. 用新的合金能带计算模型计算了锗硅合金的能带,对无序体系电子态的计算进行了一次初步的尝试。

    The energy band for Si-Ge alloy is calculated using a new computational model , from which a trial test of computing the electronic state in disordered system is made .

  28. 这些效应可以用碲镉汞表面能带结构的模型来解释。

    These effects can be ex - plained by the HgCdTe surface energy band model .

  29. 通过比较,这一模型既具有非抛物多能谷能带模型运算速度快、使用方便的优势,又具有与采用全导带模型相近的计算精度。

    By comparison with other methods , the calculation based on this model is as fast as nonparabolic model and as accurate as full band model .

  30. 本文在多能带及二能带理论模型下,对多光子吸收跃迁速率的一般表达式进行了化简,并对非线性相互作用项对跃迁速率的贡献,作了讨论。

    Using a multi-band model and a two-band model , the simplified expressions of transition rate for multiphoton absorption are separately given . And the contribution of nonlinear term in the interaction to the transition rate is discussed .