砷化镓半导体

砷化镓半导体激光区截装置及其测时系统

GaAs semiconductor laser light screens and their use on chronometric systems

砷化镓半导体光吸收特性的研究

Investigation on the Property of Optic Absorption of GaAs Semiconductor

砷化镓半导体；发电机转子；测温系统；

GaAs semiconductor Generator rotator Temperature measuring system ;

砷化镓半导体外延层的电子声成像

Electron-Acoustic Microscopic Study of GaAs Epitaxial Layers

高功率电磁脉冲对砷化镓金属半导体场效应管的影响

Numerical simulation of the influence of high power electromagnetic pulses on GaAs MESFET

砷化镓基半导体材料抗辐照噪声表征参量研究

Research on Noise Parameter Using for Characteristic Radiation Hardness of GaAs-based Semiconductor Material

砷化镓是化合物半导体中最重要、用途最广泛的半导体材料之一。

Gallium arsenide is one of the most important and most widely used semiconductor materials .

凹槽栅砷化镓金属-半导体场效应晶体管的二维稳态有限元分析

Two-dimensional steady-state numerical analysis of recessed gate GaAs mesfet ′ s using finite element method

砷化镓（GaAs）半导体材料在国防、卫星通讯等领域有极其重要的作用。

Gallium Arsenide ( GaAs ) is one of the most important compound semiconductor materials for national defense and satellites communication due to its high electron mobility and direct band gap .

砷化镓及相关化合物半导体材料的研究进展和应用前景

Development and Future Prospects of GaAs and the Related Compound Semiconductor Materials

随着半导体工业的飞速发展，单晶硅、砷化镓和碳化硅等半导体陶瓷材料在此领域得到广泛应用。

With the development of semiconductor industry , semiconductor ceramic material such as single silicon , gallium arsenide and silicon carbide , etc , is extensive used in this field .