砷化镓

C波段双栅砷化镓场效应管三倍频器的研制

Development of C-band dual-gate GaAs MESFET frequency tripler

介绍了一个在SUN工作站上自主开发的砷化镓集成电路CAD系统。

A GaAs IC CAD system which developed on SUN workstation is introduced in this paper .

n型砷化镓中1.36eV发光峰的研究

Study of 1 . 36 eV Photoluminescence Peak in n-Type GaAs

中子辐照n型砷化镓退火特性的光致发光研究

Photoluminescence Study on Annealing Behavior of n-Type Gallium Arsenide Irradiated with Neutrons

LED用砷化镓抛光片表面状态研究

Study on the Surface-State of GaAs Polished Wafer for the Use of LED

连续大功率CO2激光器窗口用的复合型砷化镓材料的研制

Preparation of recombination-type GaAs materials for CW high power CO_2 laser windows

用x射线形貌研究半绝缘砷化镓单晶胞状结构

Study on the cell structure in semi-insulation gallium arsenide

砷化镓晶体在连续CO2激光作用下的三阶非线性系数

The third-order nonlinear susceptibility of ga Ilium arsenide under irradiation of CW CO_2 laser

锗、硅、锑化铟和砷化镓的热膨涨&用X射线衍射法测量

X-ray measurement of the thermal expansion of germanium , silicon , indium antimonide and gallium arsenide

TEM观察砷化镓晶片损伤层

Observation of Damage Layer on Surface of GaAs Wafer by TEM

X波段砷化镓场效应管介质振荡器

X-Band GaAs FET Dielectric Oscillator

砷化镓集成电路CAD系统

GaAs IC CAD System

半绝缘砷化镓Hall测量中的若干问题

Some problems in Hall measurement of SI-GaAs

高纯度砷化镓残留受主BA、DA峰的电子声子耦合

Electron-Phonon Coupling Associated with BA and DA Transitions in High Purity GaAs

7-10千兆赫pn结砷化镓功率雪崩管的设计和性能研究

Design and Research of 7-10 GHz p-n junction GaAs IMPATT Diodes

半绝缘砷化镓单晶中AB微缺陷的定量研究

Quantitative study of AB microscopic defects in semi-insulating GaAs single crystals

S－GaAs表面键对砷化镓电性能的影响

Effect of S-GaAs surface bonds on GaAs electronic property

利用砷化镓表面的二次谐波测量ps激光的脉宽

Measurement of picosecond laser pulse widths with second harmonic waves generated from GaAs surfaces

砷化镓表面的等离子体氧化及氧化物的AES分析

Plasma anodization of GaAs surfaces and AES analyses of the oxide

采用B2O3液封直拉法制备出高电阻率的复合型半绝缘砷化镓。

The recombination-type semi-insulating gallium arsenide material of high resistivity is prepared by B2O3 liquid encapsulated Czochralski method ( LEC ) .

砷化镓衬底CVD金刚石薄膜辐射探测器的研究

Reserch on GaAs based CVD diamond film radiation detector

砷化镓晶片表面的XPS研究

XPS Study of Surface Properties of GaAs Wafers

磷砷化镓离子注入层的CWCO2激光退火研究

Studies of CW CO_2 Laser Annealing in the Ion Implanted Layers of GaAs_ ( 1-x ) P_x

该系统可完成微波、毫米波集成电路CAD及砷化镓超高速数字集成电路CAD。

The CAD system can be used to design GaAs microwave and millimeterwave integrated circuits and GaAs very high speed digital integrated circuits .

砷化镓PIN管单片限幅器

GaAs PIN Limiter MMIC

C波段4W砷化镓功率场效应晶体管

C Band 4 W Power GaAs FETs

MeV硅离子注入砷化镓的两步快退火

MeV Si implanted GaAs activated by a two-step rapid thermal annealing

砷化镓PN结注入式激光器

GaAs PN junction injection laser

半绝缘砷化镓EPR谱的异常退火特性

Unusual Annealing Behavior of EPR Spectra in Semi-Insulating GaAs

钨硅化物砷化镓Schottky接触的形成和特性

Formation and Characterization of Tungsten Silicide GaAs Schottky Contacts