电子器件

许多电子器件公司都有“计划经理”，他们既负责单项产品的推出（项目），也负责长期协调多项产品的推出（持续运作）。

Many electronics firms have program managers who are responsible for both individual product releases ( projects ) and the coordination of multiple releases over a period of time ( an ongoing operation ) .

异质结双极晶体管（heterojunctionbipolartransistor简称HBT）是异质结电子器件重要的一种。

Heterojunction Bipolar Transistor ( HBT ) is one of important heterojunction electronics devices .

与其它FACTS装置不同，它可以不采用电力电子器件，而仅由常规器件组成。

In contrast to the traditional FACTS controllers , IPCs can be constructed by conventional elements instead of power electronic devices .

用PSPICE多瞬态分析法建立新型电力电子器件的模型特性

The PSPICE Multiple Transient Analysis for the Study of Power Electronic Device Model Characteristics

高性能微处理器DSP的出现及功率电子器件的发展则为伺服系统的全数字化实现创造了条件。

Micro processor DSP with high performance and the advanced power electronic devices make it possible to realize the full digital control in AC servo system .

由于其特殊的结构，四角状ZnO一维纳米结构在真空电子器件方面有很好的应用前景。

Our results demonstrated that tetrapod-like ZnO 1D nanostructures have potential application in the field of vacuum electron devices arising from the special structure .

用于真空电子器件的非ODS水剂清洗工艺

Non-ODS Aqueous Cleaning Technique for Vacuum Electron Components

硅直接键合（SDB）技术在新型电力电子器件应用中的新进展

Application of Silicon Direct Bonding Technique in New Power Electronic Device

本文介绍了ECM电子器件识别系统的研制过程和实际测试结果。

The development of ECM electronic component recognition system and the result of test in practice are introduced in the thesis .

在纳米科技领域，ZnO已经逐渐成为继碳纳米管之后在未来电子器件系统中极具吸引力的纳米材料之一。

Therefore , in the field of nanotechnology , following carbon nanotubes , ZnO has gradually become one of the most attractive nano-materials among the potential electronic device systems .

在利用Top-Down方式加工纳米电子器件和纳米光电子器件的研究中，纳米薄膜的制作和加工技术是一个关键环节。

The fabrication technology of nano film is a key in the research of nano electron / photoelectron devices based on the Top-Down machining .

发射极关断晶闸管（ETO）是满足高性能电能变换技术要求的新型大功率电力电子器件。

The Emitter Turn-off ( ETO ) thyristor is one of the novel high power devices .

传统PID控制方式要以有效的系统模型为基础，然而，空气动力学的不确定性以及电力电子器件的复杂性使得准确模型的获取非常困难。

The traditional PID control system needs an effective system model , however , as the uncertainty of aerodynamics and the complexity of power electronic devices , it is very difficult to obtain accurate models .

当电子器件的尺寸接近纳米尺度时，量子效应对器件工作的影响变得格外重要，就需要采用具有新机理的晶体管结构，单电子晶体管（SET）就是其中一个典型的结构。

As electronic device dimensions approach nanometer scale , quantum effects become especially and increasingly important for device operation , and the transistor structure with new mechanism needs to be adopted . The single-electron transistor ( SET ) is a typical example of such a structure .

所有的FACTS设备均是通过控制电力电子器件的开关过程，以有效实现电力系统的潮流控制、电压调节、提高系统暂态稳定性以及抑制系统低频振荡等功能。

Almost all the FACTS elements are based on controlled switching of the power electronic devices to effectively realize power flow control , voltage regulation , enhancement of transient stability and mitigation of low-frequency system oscillations .

论文利用电压空间矢量脉宽调制法推导出UPFC各桥臂电力电子器件的开关状态。

It deduces the state of each power electronics device in UPFC by means of the voltage space vector pulse width modulation method .

传统MOSFET结构正以较快的发展速度接近其物理极限，而单电子器件将成为新型的高性能集成化器件结构。

Conventional MOSFET architectures are approaching rapidly fundamental physical limitations , while single-electron devices are expected to be a new type of integrated device architecture with high performance .

同时，还展示了用标准互补金属氧化物半导体（CMOS）技术，实现硅基光子器件和电子器件在同一基片上微纳集成的巨大前景。

The perspective of micro / nano scale monolithic integration of optical devices and electronic devices on a single chip by standard complementary mental oxide semiconductor ( CMOS ) technologies is also presented .

GaN基氮化物材料已成功地用于制备蓝、绿、紫外光发光器件，日光盲紫外探测器以及高温、大功率微波电子器件。

GaN based nitrides have been successfully used in blue / green / violet light emitting devices , UV solar blind optoelectronic detectors and high temperature , high power microwave electronic devices .

本文以倍频式IGBT高频感应加热电源为研究对象，首先介绍了感应加热电源的基本知识和电力电子器件的发展。

This paper does research on multiple-frequency IGBT high frequency induction heating power supply . In the first place , basic knowledge of induction heating and development of power devices are introduced .

依据交流步进控制原理，采用新一代电力电子器件IGBT，设计了一种电流控制型的变频器，把同步电动机的速度控制和位置控制结合在一起。

One sort of current-controlled convener is designed by using power electronic device IGBT according to AC step motion control theory , which combines speed control with position control to synchronous motor .

叙述了大功率高压电力电子器件IGBT变频传动装置整流器系统的原理，着重分析了故障原因及应吸取的教训。

The principle of in frequency converter using large high-voltage power electronic device IGBT was discussed . And the cause of fault was analyzed as well as the lesson should be learned .

确定了一套完整的54cmFS高真空电子器件金属零件化学研磨工艺。

A kind of chemical grinding process for metal parts of 54 cm FS high-vacuum electronic devices was determined .

使用SCL能够方便地从远方收集不同厂家生产设备的配置信息并对装置进行远程配置，使系统维护升级、智能电子器件控制变得更为方便。

Using SCL , system collects the configuration information of devices by different manufacturers and configures them remotely , which simplifies system upgrading and intelligent electronic device control .

电力电子器件最初的产品是整流管、晶闸管、功率MOSFET、大功率GTR等产品、但是这些产品都有着自身的缺点。

Power electronics ' initial product is rectifier , thyristor , power MOSFET , power GTR and other products . However , these products all have their own shortcomings .

此方法有望拓展RGO薄膜在柔性电子器件以及集成化的电子器件等领域的应用。

Thus , this method may have potential applications in future flexible electronic device and integrated electronic devices .

随着电力电子器件制造技术的不断发展以及现代电力电子技术的日渐成熟，人们将现代电力电子技术与变压器技术有机的结合起来，提出了一种新型的电力变压器电力电子变压器（PowerelectronictransformerPET）。

With the continuous development of manufacturing technology of power electronic devices and the gradual maturing of modern power electronic technology , a new type of power transformer & ( Power Electronic Transformer , PET ), which combined with power electronic technology and transformer technology , is proposed .

该方法可直接推广到整流器、晶闸管、GTR、IGBT、IEGT和MCT等多种平面型电力电子器件设计中。

The method is suited for designing of the several of planar power electronic devices such as Rectifier , Thyristor , GTR , IGBT , IEGT and MCT .

通过对CdS、PbS等半导体纳米粒子的充电电容的计算找到了其在室温下形成单电子器件的最大粒径。

The maximum quantum dot sizes which can form the SET ( Single Electron Transistor ) at room temperature are found by the computation of the capacitance of semiconductor nanoparticles such as CdS and PbS , etc.

自从20世纪50年代以来，计算方法在理解和研制真空电子器件及其相应的高功率器件（如HPM管）方面一直起着关键性的作用。

Since 1950s , the calculation method has played a pivotal role in the understanding and development of electronic vacuum devices and their corresponding high-power devices ( such as the HPM ) .