热电子

论热电子发射中发射电流与两极间电压之间的关系

The Relationship between Emission Current and Interelectrode Voltage in Thermoelectron Emission

提出了PC型半导体探测器对波段外激光辐照的热电子光电导响应机制。

The abnormal responsive mechanism of photoconductive semiconductor detectors irradiated by off-band laser , hot electron photoconductivity , was proposed .

电子俘获对φb和热电子流的影响

Effect of Electron Trapping on (?) _b and Hot-Electron Current

HER磁镜上硬X射线和热电子测量

X-ray measurments on the her magnetic mirror

Mo-Y2O3阴极的热电子发射性能

Thermionic Emission Properties of Mo-Y_2O_3 Cathode

MOS电容的衬底热电子注入响应特性

Response of MOS capacitor to substrate hot - carrier ejection

基于CPLD的场助热电子发射静态显示驱动系统

The Static Multi-Gray Drive Circuit System of Field Assistant Hot Electron Display Based on CPLD

本文研究了电子束蒸铝MOS结构的热电子雪崩注入的界面效应。

This Paper studies interface effect of avalanche hot electron in MOS structures .

MOS结构的雪崩热电子界面效应

Interface effect of avalanche hot electron in MOS Structures

电子-离子碰撞对超热电子影响的PIC模拟计算

PIC simulation of the electron-ion collision effects on suprathermal electrons

谱的发射，而在热电子环破裂之后，冷等离子体的衰减时间常数比热电子环的衰减时间常数大，这与X射线方法测量的结果是一致的。

The decay time constant is larger than that of hot electron ring . This is conformed with results measured by use X-ray detector .

金属靶背向超热电子运动特性的PIC模拟

PIC simulation of super hot electrons emitting out of the rear side of metal target

用于ICF实验中超热电子测量的数据采集系统

Data acquisition system based on VXI for ICF

GaNHFET沟道热电子隧穿电流崩塌模型

Hot Electron Tunneling Mechanism of Current Collapse in GaN HFET

雪崩热电子注入对快速热氮化的SiOxNy膜陷阱的影响

Effects of Avalanche Hot-Electron Injection on Trapping of Rapid Thermal Nitrided SiO_xN_y Film

证明在黑洞靶中SRS是产生超热电子的主要机制。

The results show that SRS in Hohlraum targets is the dominant mechanism to produce suprathermal electrons .

文章也分析了TCO膜的热电子发射对电池饱和电流的影响。

The effect of thermal emission of TCO on cells performance is also analysed .

研究了在ICF内爆区的条件下，热电子对氩等离子体粒子布居和K壳层发射谱的影响。

The effect of hot electrons under the conditions of ICF on the population kinetics and K shell emission spectra of argon plasmas are investigated in detail .

本文用雪崩热电子注入技术与MOSC-V技术，研究了软X射线辐照引入于SiO2中的中性陷阱的性质。

This Paper studies the properties of neutral traps in soft X-ray beam irradiated SiO2 with the avalanche hot electron injection and MOS C-V techniques .

雪崩热电子注入研究富氮SiOxNy纳米级薄膜的陷阱特性

Study of Trap Characteristics of Nitrogen rich SiO_xN_y Thin Film in Nanometre Range by Avalanche Hot electron Injection

分析InAs／InP（0.7）Sb（0.3）热电子晶体管的电流增益β及最高收集极电压V（CM）。

This paper analyses the current gain β and maximum collector voltage VCM of InAs / InP ( 0.7 ) Sb ( 0.3 ) hot electron transistor .

为了探索超热电子束的传输特性，利用光学CCD相机在靶背法线方向测量了光学渡越辐射积分成像图案。

For exploring the transport characteristic of hot electron bunches , the integrated image pattern of optical transition radiation were measured at the normal direction of the rear side of targets employing the optical CCD camera .

在MM-2磁镜上对热电子环的实验观测

Experimental observation of hot electron ring on mm-2 mirror device

实验研究了超短脉冲激光辐照固体靶产生的超热电子温度，所用方法是测量超热电子在固体中韧致辐射产生的硬X射线（>30keV）能量连续谱。

The temperature of hot electron generated from the solid target irradiated by ultrashort pulse laser has been studied experimentally . The method is to measure the hard X-ray continuum generated by the high energy electron bremsstrahlung process in solid region .

观测和计算表明，硬x射线爆是由电流片中加速的高能非热电子所产生，而软X射线爆则由耀斑区的高温等离子体的热轫致辐射所产生。

3 , The observational results show that the hard X-ray burst is produced by high energy non-thermal electrons accelerated in the current sheet . But solf X-ray burst is produced by hot bremsstrahlung of high-temperature plasma in the flare region .

研究了GaNHFET中沟道热电子隧穿到表面态及表面态电子跃迁到表面导带两种跃迁过程及其激活能。

Two electron transition processes between channel and surface states in GaN HFET : hot electron tunneling and surface to band edge transition are investigated .

另外，朗谬尔波对背景热电子有加速作用，计算v≈24vfe的一个热电子可加速到约6MeV.可见朗谬尔湍动对电子加速是很有效的。

Moreover , Langmuir wave accelerates thermal electrons . A thermal electron with v ≈ 24 v_ ( Te ) can be accelerated to 6 MeV and it seems that the acceleration of the electrons caused by Langmuir turbulence is efficient .

用碘化钠探测器研究简单磁镜装置MM-2中热电子环特性

Study of properties of the hot electron ring in the simple mirror device mm-2

利用柱坐标系下的二维PIC程序对金属靶背向超热电子束的运动特性进行了模拟，研究了超热电子的回流机制。

The kinetic features of super hot electrons emitting out of the rear side of metal target is simulated and the reflux is studied by a two-dimension PIC code in cylindrical coordinates .

超短超强激光与等离子体相互作用过程中，在临界密度面附近产生能量很高的超热电子，当其能量超过靶后冷物质K壳层的电离能时，就会激发冷物质的Kα特征线。

During the interaction of ultra-short and ultra-intense laser pulse with plasmas , high energy electrons will be produced near to critical-density surface . When the hot electrons knocked out inner-shell electrons of the cold material , K α characteristic lines emission will be created .