欧姆

其中，接收天线的选取、天线座到模块RFIN端的50欧姆阻抗匹配设计以及电源模块的设计等都在本文中作了详细阐述。

The selection of receiving antenna , the 50 ohm impedance matching design and the design of power modules are elaborated in the paper .

通过实验分析，证明铝导电浆料经印烧后与PTC热敏电阻器有良好的欧姆接触。

This article verified with experiments that aluminum conductive paste has very good ohm contact with PTC thermistors after printing-sinter .

研究了基于低掺杂的p型硅的欧姆接触制备，分析了Al/p-Si欧姆接触特性。

The ohmic contact based on low doped p-silicon was investigated .

p型金刚石欧姆接触的研究

Study on the Ohmic Contact for p-Type Diamond

Ni/Au与N掺杂p型ZnO的欧姆接触

Ni / Au Contact to N-doped p-type ZnO

采用Ni／Au作为p型欧姆接触电极。

Ni / Au was used as p-type ohmic contact .

p型GaN欧姆接触的比接触电阻率测量

Measurement of Specific Contact Resistivity of Ohmic Contact on p-GaN

基于Ni/Ag/Pt的P型GaN欧姆接触

Ni / Ag / Pt Ohmic Contacts to P-type GaN

GaN基紫光LED的高反射率p型欧姆接触

High-reflectance Ohmic Contacts to p-GaN of GaN-based Violet LEDs

GaN的刻蚀、P型欧姆接触以及LED的研究

Research on Etching GaN 、 P-type Ohmic Contact and Fabrication of GaN LED

N型GaAs欧姆接触中各组份对比接触电阻的影响

Effect of components on the ohmic contact resistivity of n-type GaAs

用激光合金化在n型GaAs上制作欧姆接触

Formation of ohmic contacts on n-type GaAs by laser beam alloying

对n型SiC的Ni基欧姆接触的机理进行了研究。

The Ni-based Ohmic contact to n-type SiC is studied .

p型GaN器件欧姆接触的研究进展

Developments of Ohmic Contacts of p-Type GaN devices

在整个Z箍缩过程中欧姆加热能量是较小的。

The electric energy consumed by Ohm heating is rather small .

水文提出用圆环测试结构和双传输线模型确定金属-半导体欧姆接触的比接触电阻ρC值。

Four-Circular structure and double transmission line model have been developed to determine the specific contact resistance of metal-semiconductor ohmic contact .

SiC上Ti/Ni/Au多层金属的欧姆接触特性

Ohmic contact property of Ti / Ni / Au on n-type 4H-SiC

p型GaN材料上的欧姆接触

Ohmic Contacts on p-Type GaN

Al-Si欧姆接触的连续CO2激光辐照合金化

CW CO_2 Laser Irradiation Metallization of Al-Si Ohmic Contact

注Zn~+-GaAs的激光退火及GaAs欧姆接触的激光合金化

Laser annealing of zn-implanted GaAs and laser alloying of ohmic contacts on GaAs

Ti/Al/Ni/Au与n型GaN的欧姆接触研究

Study of Ohmic Contact of Ti / Al / Ni / Au to n Type GaN

硅基GaN欧姆接触及紫外探测器的研究

Study of Ohmic Contact and UV-detector Based on GaN / Si

宽带高隔离RFMEMS串联欧姆开关的设计及其建模

Design and Equivalent Circuit Modeling of Wideband RF MEMS DC-contact Series Switch with High Isolation

欧姆接触是制备GaN基器件的关键技术之一。

Ohmic contact is a critical technology for preparing GaN based devices .

采用Ag浆烧制电极，以达到良好的欧姆接触。

The electrodes are baked by using silver paster in order to obtain good ohmic contact .

GaAs外延层蒸镀Cr和Au膜制作欧姆接触及分析

A Technique of Making Ohmic Contact with Cr and Au Plating Evaporated on the GaAs Epilayer

GaP低阻欧姆接触层的AES和SIMS分析

AES and SIMS analysis of low - resistance ohmic contacts to p - gap

Er位井的位置和深度是与所感应的脉冲电流与欧姆电流的比值有关。

The positions and the depths of the E_r well are depended on the ratio of induced pulse current with plasma Ohmic current .

PS二极管由薄金膜、PS层、n型Si衬底和欧姆接触铝背电极组成。

The PS diode consist of thin Au film , PS layer , n type Si Substrates and ohmic back contacts .

2.5GDFB量子阱激光器p型欧姆接触电极的研究

P - type low resistance ohmic contact for 2.5G DFB quantum well lasers