快恢复二极管

掺钯硅快恢复二极管VF～T（RR）兼容性研究

Study on V_F ~ T_ ( RR ) Tradeoff of Palladium Doped Fast Recovery Silicon Diode

作为方法的应用，研究了三电平中点箝位式变换器开关损耗，研究的器件为主流功率器件IGBT和快恢复二极管。

The switching losses model of neutral-point-clamped three-level inverter with widely used IGBT and fast recovery diode is developed .

最后对半导体照明控制关键器件作了一系列可靠性分析，包括LED、MOSFET、快恢复二极管等器件，如材料结构、工作动态性能等方面一一加以分析。

Finally , a series of important reliability analysis of the semiconductor lighting control key devices including LED , MOSFET , fast recovery diode devices is made from the material structure , working dynamic performance .

利用普通的p+nn+二极管芯片，通过掩蔽扩散选择性地掺入深能级杂质，制备出了掺Au、Pt的MLD快恢复二极管。

Based on the p + nn + diode wafer , the MLD fast recover diode with Au or Pt doped is fabricated by diffusing deep level impurity selectively .

由于功率MOSFET器件单管容量小，大功率设备需要大量的器件并联使用，而为了消除其固有的寄生二极管的不良反向恢复特性，必须串联快恢复二极管。

For the capacity of MOSFET is small , high-power induction heating power require devices in parallel and in order to eliminate the inherent parasitic diode reverse recovery characteristics of the negative , quickly restore diodes must be used in series .

高压功率快恢复二极管（以下简称FRD）广泛地应用于电力电子电路中，作为续流二极管与三端功率器件并联使用，是现代电力电子技术中的关键器件。

Power fast recovery diode , which is abbreviated to FRD , is one of the key devices in modern power electronic technology . In the power electronic circuits , FRD is usually parallel connected with three-end power devices as their freewheeling diode .

少数载流子寿命横向非均匀分布的快恢复二极管特性

Minority - Carrier Life Time Lateral Non-Uniform Distribution Fast Recover Diode

局域铂掺杂寿命控制快恢复二极管的研究

Experiment on Localized Platinum Doping Lifetime Control in Fast Recovery Diode

ZK1150/4500快恢复二极管的研制

Research on Fast Recovery Diodes typed ZK1105 / 4500

SONIC-新一代快恢复二极管

SONIC & A New Generation of Fast Recovery Diodes

金铂双掺杂快恢复二极管特性的研究

Study on properties of FRD by dual diffusion of gold and platinum into silicon

高压铂扩散快恢复二极管的研究

Study of High Voltage Pt Diffused Diode

采用直拉单晶硅片代替成本较高的外延硅片，采取铂扩散的方法引入复合中心，从而控制少子寿命以减少快恢复二极管的反向恢复时间。

Spin-on platinum diffusion was used to introduce recombination center in order to reduce the reverse recovery time TRR of fast recovery diode .

探讨了快恢复二极管制造过程中，选择适当的复合中心能级去调整快恢复二极管软度因子和软度的可行性。

In this paper , the probability for adjusting silicon fast recovery diode soft factors and softness by selecting proper recombination center in process is analyzed .

在快恢复二极管的制造中，减小器件少子寿命，提高器件开关速度的方法是在器件内部引入复合中心。

In fast recovery diode production , the method to reduce minority carrier lifetime and to shorten switching speed is to introduce recombination centre into the device .

掺金和掺铂技术被广泛地应用于制造快恢复二极管中，这两种技术各具优缺点。

Aurum ( Au ) and Platinum ( Pt ) doping techniques are widely used to fabricate the fast recovery diodes ( FRD ), and both of them have merit and demerit .

文章还比较了SONIC二极管和用铂或金作为寿命抑制剂的标准快恢复外延二极管（FRED）在25℃到125℃下的开关损耗。

The switching losses at 25 ℃ to 125 ℃ are compared between SONIC and standard Fast Recovery Epitaxial Diodes ( FRED ) using platinum or gold as lifetime killers .

其次，对H桥逆变及MOS管同步整流原理加以分析，并通过仿真证实了应用MOS管同步整流所带来的电源效率比快恢复整流二极管要高的多。

Secondly , to H bridge inverter and MOS tube synchronous rectifier principle , and analyzed by simulation confirm the application of synchronous rectifier brings MOS tube of power efficiency than fast recovery power diode to much higher .

阐述了高中频电阻焊机的形式、发展，特别是对超大电流FRD快恢复整流二极管的需求。

This paper mainly discusses the formation and development of high frequency resistance welding machines , especially mentions the demand for large current fast recovery diode .

使用硼铝二氧化硅乳胶源研制出反向快恢复整流二极管，其反向恢复时间trr≤5μs，反向耐压＞1000V。介绍了该器件的结构特点及扩散工艺。

Using colloid SiO 2 source with boron and aluminum , the fast reverse recovery diode was made . Its t rr is shorter than 5 μ s and the inverse voltage is higher than 1000 V. The structure features and diffusive techniques are described in the paper .

肖特基二极管与快恢复整流二极管之比较

The comparison of SBD and Fast Recovery Rectifiers

文中对多管芯并联方案进行了详细的电参数设计、结构设计、可靠性设计、工艺设计，并完成结果验证，为高压大功率快恢复整流二极管的研制提供了一种新的方法。

The article narrated detailed electrical parameter design , structural design , reliability design , technological design and completed the result confirmation , to provid one new method for the development of the high-tension highpower swift-restore rectifier diode .

目前，这些电路中应用最多的仍然是PIN结构的快恢复和超快恢复二极管。

At present , most power switching diodes used in these circuits are still being the PIN structure fast and super fast recovery rectifiers .

采用从硅片背面进行深的磷扩散和控制轴向寿命抑制剂的办法开发出了带有拖尾电流的快恢复及软恢复二极管。

The fast and soft recovery diodes with tail current were developed using a combination of deep diffused phosphorous wafers from the backside of a wafer and controlled axial lifetime killers .