微电子器件

低轨卫星微电子器件SER仿真分析

Simulation of Microelectronic Devices ' SER in LEO Satellite

以氮化镓（GaN）为代表的Ⅲ族氮化物半导体材料，由于其在光电子和微电子器件上的应用前景，受到了人们极大的关注。

Due to their great potential use in optoelectronic and microelectronic devices , GaN-based III nitrides semiconductor materials have been widely investigated .

采用超声成像方法对微电子器件镀膜靶材钎焊质量进行检测，获得其A扫描和C扫描图像。

Ultrasonic imaging technique was adopted to evaluate the joining quality of a target assembly used in microelectronic technology .

半绝缘（SI）InP主要用于微电子器件和光电集成。

Semi-Insulating InP is used in microelectronics devices and integrated opto-electronic circuits .

静电放电和方波EMP对微电子器件的效应

Research on Effects of ESD and Square-wave EMP on Microelectronic Device

微电子器件方波EMP注入敏感端对的实验研究

Experimental Research on Square-Wave EMP Sensitive Ports of Microelectronic Device

GaN基半导体在短波长发光二极管、激光器和紫外探测器以及高温微电子器件等方面显示出广阔的应用前景，已成为人们研究的热点。

GaN has very promising potential for short-wave length light-emitting diodes , semiconductor lasers , and optical detectors .

磷化铟（InP）已成为光电器件和微电子器件不可或缺的重要半导体材料。

Indium Phosphide ( InP ) has been indispensable to both optical and electronic devices .

研究表明：MOS电路等微电子器件，在ESD作用下确实存在潜在性失效问题。

It shows that the problem of latent failure exists for MOS circuit after the ESD stresses imposed on it .

观察和分析了微电子器件SiO2介质覆盖层对Al－Cu金属化系统可靠性的影响。

The effect of the SiO2 dielectric passivation on the reliability of an Al-Cu metallization of microelectronic devices was observed and analyzed .

GaN具有禁带宽、热导率高等特点，广泛应用于光电子和微电子器件领域。

Gallium nitride has been widely used in optoelectronic and microelectronic devices field because of its large , direct bandgap , high thermal stability , etc.

Graphene材料在纳米微电子器件、光电子器件、自旋量子器件以及新型复合材料方面有着广泛的应用前景。

Graphene & material has broad application prospects in nano-microelectronic devices , optoelectronic devices , spin quantum devices , as well as new composite materials .

在MEMS和微电子器件中，由于加工工艺和材料本身的光、热、声、机、电等特性，各种金属、非金属薄膜被广泛使用。

In MEMS and microelectronics devices , metallic and non-metallic thin films are widely used because of the own characteristics of light , heat , sound , mechanical , and electrical .

近年来，随着微电子器件、微机械系统（MEMS）及互连材料领域的飞速发展，Cu/Mo纳米多层膜及复合薄膜广受关注。

In recent years , with the rapid development of microelectronic devices , micro mechanical systems ( MEMS ) and interconnection material , nano-multilayer and composite films of Cu / Mo are concerned wide .

由于氟是强电负性元素，氟化键具有低的极化率，可以降低介电常数，因而氟化类金刚石薄膜可以在微电子器件中用作低k介质材料；

Because the fluorine element is strong negative-dielectric and the fluorinated chemical bonds have low dielectric polarizability and may reduce the films dielectrics constant , the fluorinated diamond-like carbon films may be used for low k dielectric material in micro-electronic device .

这有利于PST薄膜的制备优化，性能提高及在相关微电子器件中的应用。

This is favorable for the optimization of preparation , the improvement of properties , and the application to micro-electric devices of PST thin films .

因此高介电常数材料在微电子器件中，特别是在动态随机存储器（DRAM）中有着广泛的应用前景。

High-dielectric-constant oxides are very desirable for the application in microelectronics , especially for the application in dynamic random access memories ( DRAM ) devices .

在HI-13串列加速器上建立了对微电子器件进行单粒子效应模拟实验的辐照和检测技术。

Experimental testing technique of heavy ion induced single event upset ( SEU ) has been developed at HI-13 tandem accelerator .

纳米ZnO在光电子器件和微电子器件等领域具有广泛的应用前景，而目前纳米ZnO阵列粒度分布均匀性、高密度、结晶性能还达不到纳米ZnO阵列器件的要求。

Nanometer ZnO have extensive application prospects in the field of optoelectronic and microelectronic devices . However , the uniform particle distribution , high-density and crystalline of the present ZnO nano arrays cannot reach the requirements of ZnO nano arrays devices .

结合星载微电子器件在空间应用中的主要失效机理，对作为星载计算机主要功能部件的航天级处理器、存储器以及FPGA的可靠性设计进行了研究。

As the main functional parts of the satellite-carried computer , the reliability design of the space level microprocessor , memory and FPGA are thoroughly analyzed , combined with a discussion on the main failure mechanisms of satellite-carried microelectronic devices in space application .

薄膜作为物质存在的最常见的形式之一，广泛地应用于MEMS和微电子器件中，并且占有着重要的地位，目前的微尺度热学研究主要集中在薄膜上。

Film as one of the most common form of the material existence has been widely used in MEMS and microelectronic devices , and occupies an important position , the current study about micro scale heat focuses on the film .

CVD金刚石薄膜具有优异的电学、光学、热学、机械性能和化学稳定性，能够耐高温、耐腐蚀和抗强辐射，成为当前微电子器件在苛刻环境下工作的首选材料。

The unique optical , electrical , thermal , mechanical properties and outstanding chemical stability of diamond film make it an ideal material for micro-electronics devices in future especially at high temperature , high radiation and corrosion environments .

介绍了SOI材料结构技术用于微电子器件的优势、SOI结构及基于SOI结构材料的兵器微电子技术应用，展望了SOI技术的发展前景。

In this paper , the superiorities of semiconductor device based on SOI , SOI structure , and micro - electron technology based on SOI material are introduced , and prospects for SOI technology are forecasted .

氧化镁（MgO）薄膜具有很多优良的物理化学性质，是一种非常好的缓冲层和介电保护层，在微电子器件领域存在巨大的应用潜力，因此受到众多研究者的关注。

Magnesium oxide ( MgO ) has attracted much attention , because it can be used as a buffer layer and a protective layer of dielectrics due to its superb properties , and has great potential in the microelectronic device application .

氧化锌（ZnO）是一种具有纤锌矿结构的自激活直接带隙半导体材料，具有独特的电、光、磁、机械、化学性质，在微电子器件和光电器件等领域具有巨大的应用潜力。

Zinc Oxide ( ZnO ) is a kind of self-excitation semiconductor with wurtzite structure and a direct wide band gap , which has special electric , optical , magnetic , mechanic , chemical properties . So ZnO is used potentially in micro-electrical , optoelectronic devices .

随着微电子器件的尺寸进一步的减小，高介电常数材料在微电子器件中，特别是在动态随机存储器（DRAM）的应用中，扮演着重要的角色。

With the trend of size reduction of many microelectronic devices , high-dielectric-constant oxides have become increasingly important in microelectronics , especially in the application of dynamic random access memories ( DRAM ) devices .

从测得的s（L）&LET曲线，结合空间重离子和质子辐照环境模型以及离子与微电子器件相互作用模型计算，预言了器件在空间的单粒子翻转率。

Predictions of SEU rates have been derived from the test data coupled with models of heavy ion and proton environment and models of the interaction of ions with microelectronic devices .

本文从雷达技术发展的角度阐述了雷达用微波功率器件的发展趋势，并指出今后将主要发展MPM，MMIC，毫米波真空器件和真空微电子器件。

The development of the microwave power device for radar applications is described in this paper . MPM , MMIC , millimeter vacuum device , and vacuum micro-electronics device are the key devices for next generation of radar systems .

Ag-Cu-In-Sn系合金钎料，熔化温度在557~693℃之间，适合于电真空、半导体及微电子器件在真空或保护气氛中无钎剂中温钎焊。

Brazing filler metals of Ag-Cu-In-Sn series , whose melting temperature is between 557 ~ 693 ℃, fit for the braze welding of electron tube , semiconductor and microelectronic device under the condition of vacuum or protective atmosphere .

真空微电子器件阴极发射材料的选择

Selection of Cathode Material of Field Emitter for Vacuum Microelectronic Devices