吸收带

通过退火可以使V型色心吸收带消除。

This absorption band caused by V type color centers can be destroyed by annealing process .

GaAs中碳受主局域振动模的非简谐性对主吸收带的影响

Anharmonicity of Local Vibrational Mode of Carbon Acceptor in GaAs and Its Effect on Main Absorption Band

La的掺杂使TiO2的吸收带边发生了红移；

La doping also caused red-shift of the UV-Vis absorption spectra ;

吸收带重叠对CO2辐射强迫的影响。本文对比了吸收带重叠对不同模式大气辐射强迫的影响。

Effects of overlapping of the absorption bands on the radiative forcing have been examined for different model atmosphere .

采用氧合血红蛋白吸收带的漫反射光谱比率R（540）/R（575）检测人胃癌

Gastric Cancer Detection Using Diffuse Reflectance Spectral Ratio R_ ( 540 ) / R_ ( 575 ) of Oxygenated Hemoglobin Bands

Hg（1-x）CdxTe的低频吸收带

Low frequency absorption band in hg_ ( 1-x ) cd_xte

研究结果表明，（1）除YSZ外，其余三种单晶中都观察到了金属Zn纳米晶的表面等离子共振吸收带。

( 1 ) SPR absorption of metallic Zn nanoparticles is observed in crystals except YSZ .

氧等离子体阳极氧化SiO2膜的红外吸收带

Infrared absorption bands of oxygen-plasma-anodized sio_2 film

掺P不但使TiO2的吸收带边产生红移，而且在可见光区有较大的吸收系数。

The doping of P not only causes the absorption band to red-shift , and also gives rise to extremely big absorption coefficient in the visible region .

加入镱离子可以加宽EDF的吸收带。

Absorption band is broadened by adding dopant of ytterbium .

Soret吸收带的位置表明，在适中的pH范围内，Mb在薄膜中保持了其原始构象。

Soret absorption band positions suggested that Mb retained its native conformation in these films at medium pH.

求解有气体介质参与的辐射换热问题时，气体吸收带的带宽是一个重要的参数，同时它又是计算关联k模型中累积分布函数的参数。

Bandwidth is an important parameter for gas radiative heat transfer calculation , and a parameter for the calculation of the cumulative distribution function in the correlated k method .

对于HA，明显的差别在于长波方向的两个吸收带强度发生了翻转，而对EA、EB、EC均未出现该现象。

As to HA , the absorption bands in longer wavelength reverse , but EA , EB , EC have not such phenomenon .

反应前，在518nm处出现&金纳米微粒典型的等离子共振吸收带，而VB1在可见区无吸收峰；

Before reaction , there is a plasmon band that is characteristics of gold nanoparticle and VBt has no absorption peak in range of visible region .

与块体TiO2相比，其本征吸收带出现蓝移和展宽，本文对此原因进行了分析。

Comparing with bulk TiO 2 , the intrinsic absorption band shows blue shift and widening , and the reasons are also discussed in the paper .

研究了（Si，Al）O4四面体、骨架结构及沸石水红外吸收带在热处理后的变化，讨论了其特点以及与沸石结构变化的关系。

The changes of infrared absorption peaks assigned to [ Si ( Al ) O_4 ] , tetrahedra , framework and zeolite water are discussed with the structural changes during thermal treatment .

研究结果表明，（1）三种单晶中都没有观察到金属Sn纳米晶的表面等离子共振吸收带，这是因为金属Sn的复介电常数无法获得吸收极大值。

( 1 ) There is no SPR absorption of metallic Sn nanoparticles in the three as-implanted crystals due to dielectric function of metallic Sn .

PbWO4晶体F心及F~+心吸收带的能级计算

Calculation on the energy bands of the F and F ~ + centers in PbWO_4 crystals

Mo掺杂使TiO2/AC负载膜的吸收带边位置发生红移。

The band edges in diffuse reflectance UV-Vis spectra of the Mo-doped TiO 2 / AC immobilized membranes show a red shift as compared with that of the un-doped membrane .

UV-VIS光谱显示当焙烧温度为500℃时Mo-TiO2光吸收带边红移程度最大；

UV-VIS results show that when the calcination temperature is 500 ℃, the red movement of the absorption edge for the visible-light is the most .

探讨了（F2~+）H心的几个吸收带，激光输出与工作介质和辅助光的关系等问题。

Some problems such as several absorption bands of ( F2 + ) H color center , the relation between color center laser output and laser medium , as well as auxiliary light have been discussed in this paper .

结果表明，该吸收带对C的荷电态是不敏感的，红外吸收测定GaAs中碳浓度的方法对不同C补偿率的样品都是适用的。

The results indicate that this in-frared absorption is not sensitive to the charge state of carbon , the method to determine carbon concentration in GaAs by the LVM infrared absorption is available to sample of various compensation rate of carbon .

本研究表明，二者均与C受主LVM主吸收带的低能边出现的一个吸收边带有关。

In this paper , it is shown that both of them are related to the appearance of a sideband on the low energy side of the local vibrational mode main absorption band of carbon acceptor .

计算了Ga掺杂情况下ZnO晶体的总体能量、能带结构、总体态密度、分波态密度。分析了Ga掺杂对ZnO晶体电子结构和光学吸收带边的影响。

The calculation of total energy , energy band structure , and total electronic density of states and partial density of states of ZnO were carried out , Ga-doping effects on electronic and structural properties of ZnO crystal .

通过建立合理的晶格缺陷模型，成功地解释了所有的实验结果，并确定Cr，Mg共掺Al2O3晶体红外波段宽吸收带属于八面体格位中的Cr4+离子。

Through establishing a structure defect model , we successfully interpreted all the experiment results and confirmed that the extremely broad infrared absorption band belonged to Cr ~ 4 + , which should occupy the octahedral sites in Al_2O_3 .

Yb∶FAP晶体在904nm和982nm处存在Yb3+离子的两个吸收带，适合激光二极管抽运。

Two absorption bands are centered at 904 nm and 982 nm of Yb ~ ( 3 + ), respectively , which are suitable for InGaAs diode laser pumping .

相对于未掺杂的TiO2薄膜，由于金红石含量的增加，不同Pb掺杂TiO2薄膜的吸收带发生了微小的红移。

With an increase in the Pb amount in the films , the rutile content increases . Therefore , the band edges of the various Pb-doped TiO2 thin films exhibit slightly red shift compared with un-doped TiO2 thin film .

在GaAs中碳受主局域振动模主吸收带低能侧，观察到一个吸收边带，其峰频率与局域振动模吸收主带的峰频率之差约为35cm－1。

A sideband on the low energy side of the local vibrational mode main absorption band of carbon acceptor in GaAs was observed .

肽键在190nm具有强的吸收带。

Polypeptide chains have strong absorption peaks at 190 nm .

N掺杂导致样品吸收带边红移，拓宽光响应范围至可见光区，产生大量表面态及缺陷、增加表面羟基含量，有利于可见光活性的提高。

The N-doping can bring out its absorption edge red-shift , broaden light response range to visible light region , produce large numbers of surface states and defects , as well as increase the contents of surface hydroxyl groups , which result in the enhancement in visible light photoactivity .